US4200880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave transistor with distributed output shunt tuning
Assignee: STMicroelectronics lnc USA
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Filing: 1978-03-28
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Granted: 1980-04-29
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Expires: 1998-03-28
Abstract
Abstract A microwave transistor having a base and an elongated collector is provided with an elongated, grounded, DC blocking capacitor co-extensive with the collector and the output capacitance (Cob) is tuned within the transistor package by distributing along the collector a plurality of inductive wire leads connecting the collector to the base through the DC blocking capacitor. Ground returns are provided by base connections to ground on both the input and output sides of the transistor. Such an arrangement provides isolation between input and output while uniformly distributing the reactance of the tuning elements across the entire active area. The result is an increased power output as compared to conventional shunt tuning arrangements.
Inventors
- 👤 Richard H. Frey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 01:05
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10W44/226; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/5445; H10W72/547; H10W72/5475; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
150 words
An improved microwave transistor device of the type having an output capacitance and comprising emitter means, base means, isolated collector means contacting an elongated collector electrode, and separate ground contact means for the input side and for the output side of the device, said improvement comprising: an elongated, grounded, DC blocking capacitor substantially co-extensive with said elongated collector electrode; conductive means connecting said base means to said ground contact means for the input side of the device; conductive means connecting said base means to said ground contact means for the output side of the device; and a plurality of inductive means substantially uniformly spaced along the length of said elongated collector electrode connecting said electrode to said blocking capacitor to provide uniformly distributed inductances shunting said output capacitance, said inductive means having an inductive reactance substantially shunt tuning the capacitive reactance of said output capacitance at a desired operating frequency.
Claim 2
Dependent Claim
150 words
An improved microwave transistor device of the type having an output capacitance and comprising emitter means, base means, isolated collector means contacting an elongated collector electrode, and separate ground contact means for the input side and for the output side of the device, said improvement comprising: an elongated, grounded, DC blocking capacitor substantially co-extensive with said elongated collector electrode; conductive means connecting said base means to said ground contact means for the input side of the device; conductive means connecting said base means to said ground contact means for the output side of the device; and a plurality of inductive means substantially uniformly spaced along the length of said elongated collector electrode connecting said electrode to said blocking capacitor to provide uniformly distributed inductances shunting said output capacitance, said inductive means having an inductive reactance substantially shunt tuning the capacitive reactance of said output capacitance at a desired operating frequency.
Claim 3
Dependent Claim
19 words
A transistor device according to claim 1 wherein said plurality of inductive means comprise a plurality of wire leads.
Claim 4
Dependent Claim
29 words
A transistor device according to claim 1 wherein said transistor device comprises a plurality of transistors having their respective collectors disposed in electrical contact with said elongated collector electrode.
Claim 5
Dependent Claim
53 words
A transistor device according to claim 1 wherein: said transistor device comprises a plurality of transistors formed within a common die having collector contacts on one surface of said die; and said elongated electrode comprises a conductive metal mounting region disposed on a substrate for receiving the collector contact surface of said die.
Claim 6
Dependent Claim
22 words
A transistor device according to claim 1 wherein said DC blocking capacitor is adjacent and substantially parallel to said elongated collector electrode.
Claim 7
Dependent Claim
105 words
An improved microwave transistor device of the type having an output capacitance and comprising emitter means, base means, collector means contacting an elongated isolated collector electrode, and ground means, said improvement comprising: capacitance means contacting said ground means and extending the length of said elongated collector electrode; and a plurality of inductive means substantially uniformly distributed along the length of said elongated collector electrode connecting said electrode to said capacitance means and providing uniformly distributed inductance shunting said output capacitance, said inductive means having an inductive reactance such as to substantially tune out the capacitive reactance of said capacitance means at a desired operating frequency.
Claim 8
Dependent Claim
105 words
An improved microwave transistor device of the type having an output capacitance and comprising emitter means, base means, collector means contacting an elongated isolated collector electrode, and ground means, said improvement comprising: capacitance means contacting said ground means and extending the length of said elongated collector electrode; and a plurality of inductive means substantially uniformly distributed along the length of said elongated collector electrode connecting said electrode to said capacitance means and providing uniformly distributed inductance shunting said output capacitance, said inductive means having an inductive reactance such as to substantially tune out the capacitive reactance of said capacitance means at a desired operating frequency.
Claim 9
Dependent Claim
19 words
A transistor device according to claim 6 wherein said plurality of inductive means comprise a plurality of wire leads.
Claim 10
Dependent Claim
20 words
A transistor device according to claim 6 wherein said transistor device comprises a plurality of emitter means and base means.
Claim 11
Dependent Claim
60 words
A transistor device according to claim 6 wherein: said transistor device comprises a plurality of transistors formed within a common die having on one surface of said die a contact to the collector means of said transistors; and said elongated electrode comprises a conductive metal mounting region disposed on a substrate for receiving the collector contact surface of said die.
Claim 12
Dependent Claim
15 words
A transistor device according to claim 6 wherein said capacitance means is a single capacitor.
Claim 13
Dependent Claim
20 words
A transistor device according to claim 10 wherein said capacitor is adjacent and substantially parallel to said elongated collector electrode.
Claim 14
Dependent Claim
16 words
A transistor device according to claim 6 wherein said capacitance means is a plurality of capacitors.
Claim 15
Dependent Claim
25 words
A transistor device according to claim 12 wherein said capacitors are adjacent to said elongated collector electrode and extend in a direction substantially parallel thereto.
References Cited (Backward Citations)
US3825805A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-29 | 1983-10-29 | 1984-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-29 | 1987-10-29 | 1988-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-29 | 1991-10-29 | 1992-04-29 | $7700.00 | Window Closed / Lapsed |