US4839708A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electromechanical semiconductor transducer
Assignee: NAGAKUTE NAGAKUTE-CHO
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Filing: 1987-02-05
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Granted: 1989-06-13
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Expires: 2007-02-05
Abstract
Abstract There is disclosed an electromechanical semiconductor transducer which is composed of a substrate of a first compound semiconductor and layers of second to fifth compound semiconductors grown on the substrate. The compound semiconductor contains at least one element such as aluminum, gallium, and arsenic selected from Groups III and V of the periodic table. The transducer converts mechanical strain into electrical signals.
Inventors
- 👤 Hiroyuki Kano
- 👤 Yuji Yagi
- 👤 Hiroyuki Sakaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:17
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/20; G01L1/22; G01L1/2287; G01L1/2293; G01L1/18; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0051; G01L9/0052; G01L9/0055; H; H01; H01C; H01C10/00; H01C10/10
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
82 words
An electromechanical semiconductor transducer, comprising: a semi-insulating high-resistance substrate of a first compound semi-conductor, said substrate deforming in response to a pressure or load applied thereto; a conductive layer of a second compound semiconductor having a lattice constant equal to the lattice constant of said first substrate and formed on said substrate to thereby produce a piezoresistive effect; an ohmic contact layer of a third compound semiconductor formed on said conductive layer; and electrodes connecting said ohmic contact layer and conductive layer.
Claim 2
Dependent Claim
82 words
An electromechanical semiconductor transducer, comprising: a semi-insulating high-resistance substrate of a first compound semi-conductor, said substrate deforming in response to a pressure or load applied thereto; a conductive layer of a second compound semiconductor having a lattice constant equal to the lattice constant of said first substrate and formed on said substrate to thereby produce a piezoresistive effect; an ohmic contact layer of a third compound semiconductor formed on said conductive layer; and electrodes connecting said ohmic contact layer and conductive layer.
Claim 3
Dependent Claim
30 words
A transducer as set forth in claim 1, wherein each of said compound semiconductor contains at least one element selected from the Groups III and V of the periodic table.
Claim 4
Dependent Claim
39 words
A transducer as set forth in claim 2, wherein said at least one element selected from Groups III and V is selected from the group consisting essentially of aluminum (Al), gallium (Ga), indium (In), phosphorus (P) and arsenic (As).
Claim 5
Dependent Claim
33 words
A transducer as set forth in claim 1, wherein the first compound semiconductor comprises GaAs; the second compound semiconductor comprises Al x Ga.sub.(1-x) As (0<×≦1); and the third compound semiconductor comprises GaAs (0<y≦1).
Claim 6
Dependent Claim
85 words
An electromechanical semiconductor transducer, comprising: a semi-insulating high-resistance substrate of a first compound semi-conductor, said substrate deforming in response to a pressure or load applied thereto; a conductive layer of a superlattice structure composed of at least one second compound semiconductor layer and at least one third compound semiconductor layer alternately placed upon said substrate to thereby produce a piezoresistive effect; an ohmic contact layer of a fourth compound semiconductor formed on said conductive layer; and electrodes connecting said ohmic contact layer and conductive layer.
Claim 7
Dependent Claim
85 words
An electromechanical semiconductor transducer, comprising: a semi-insulating high-resistance substrate of a first compound semi-conductor, said substrate deforming in response to a pressure or load applied thereto; a conductive layer of a superlattice structure composed of at least one second compound semiconductor layer and at least one third compound semiconductor layer alternately placed upon said substrate to thereby produce a piezoresistive effect; an ohmic contact layer of a fourth compound semiconductor formed on said conductive layer; and electrodes connecting said ohmic contact layer and conductive layer.
Claim 8
Dependent Claim
29 words
A transducer as set forth in claim 5, wherein each of said compound semiconductors contains at least one element selected from Groups III and V of the periodic table.
Claim 9
Dependent Claim
39 words
A transducer as set forth in claim 6, wherein said at least one element selected from Groups III and V is selected from the group consisting essentially of aluminum (Al), gallium (Ga), indium (In), phosphorus (P) and arsenic (As).
Claim 10
Dependent Claim
42 words
A transducer as set forth in claim 6, wherein the first compound semiconductor comprises GaAs; the second compound semiconductor comprises Al y Ga.sub.(1-y) As (0<y≦1); the third compound semiconductor comprises Al z Ga.sub.(1-z) as (0<z1,z<y); and the fourth compound semiconductor comprises GaAs.
Claim 11
Dependent Claim
30 words
A transducer as set forth in claim 1, further comprising a high-resistance buffer layer formed between said substrate and said conductive layer for preventing a parasitic conduction through said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-12 | 1992-12-12 | 1993-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-12 | 1996-12-12 | 1997-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-12 | 2000-12-12 | 2001-06-13 | $7700.00 | Window Closed / Lapsed |