Patent US4839702A successfully refreshed from Google Patents.
US4839702A
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Semiconductor device based on charge emission from a quantum well
Assignee: STANFORD UNIVERSITY OTL LLC
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Filing: 1987-11-20
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Granted: 1989-06-13
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Expires: 2007-11-20
Abstract
Abstract A semiconductor device implemented on a substrate which includes a first layer of semiconductor material of a first conductivity type composed of a semiconductor material and forming a first active region of said device, and a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on the first layer and forming a second active region of the device. A third layer of semiconductor material is provided composed of a relatively narrow energy bandgap material disposed on the second layer and having an energy band step such that carriers are confined in that layer. A fourth layer of semiconductor material of a first conductivity type is further provided composed of a relatively wide energy bandgap material disposed on the third layer and forming a third active region of the device. The resulting structure provides a new type of transistor action that combines the properties of both bipolar and field effect transistors in a three terminal electronic device.
Inventors
- 👤 Anatoly Grinberg
- 👤 Alexander Kastalsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:13
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10D64/64
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
176 words
A semiconductor device implemented on a substrate comprising: a first layer of semiconductor material of a first conductivity type disposed on said substrate and forming a first active region of said device, a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap semiconductor material, disposed on said first layer and forming a second active region of the device; a third layer composed of a relatively narrow energy bandgap semiconductor material disposed on said second layer and defining a quantum well having an energy band step such that carriers are confined in that layer; and a fourth layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on said third layer and forming a third active region of the device, wherein said first layer of semiconductor material is composed of indium gallium arsenide, and further comprising a layer of an insulating material deposed on said fourth layer, and a layer of a metallic material disposed over said layer of insulating material.
Claim 2
Dependent Claim
176 words
A semiconductor device implemented on a substrate comprising: a first layer of semiconductor material of a first conductivity type disposed on said substrate and forming a first active region of said device, a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap semiconductor material, disposed on said first layer and forming a second active region of the device; a third layer composed of a relatively narrow energy bandgap semiconductor material disposed on said second layer and defining a quantum well having an energy band step such that carriers are confined in that layer; and a fourth layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on said third layer and forming a third active region of the device, wherein said first layer of semiconductor material is composed of indium gallium arsenide, and further comprising a layer of an insulating material deposed on said fourth layer, and a layer of a metallic material disposed over said layer of insulating material.
Claim 3
Dependent Claim
19 words
A semiconductor device as defined in claim 1, wherein said second and said fourth layers are composed of InAlAs.
Claim 4
Dependent Claim
19 words
A semiconductor device as defined in claim 1, wherein said second and said fourth layers are composed of InP.
Claim 5
Dependent Claim
25 words
A semiconductor device as defined in claim 1, wherein said third layer is composed of InGaAs and has a thickness of less than 100 Angstroms.
Claim 6
Dependent Claim
19 words
A semiconductor device as defined in claim 1, wherein said insulating material is 100 to 200 Angstroms in thickness.
Claim 7
Dependent Claim
17 words
A semiconductor device as defined in claim 5 wherein said insulating material is composed of insulating InAlAs.
Claim 8
Dependent Claim
171 words
A semiconductor device implemented on a substrate comprising: a first layer of semiconductor material of a first conductivity type disposed on said substrate and forming a first active region of said device; a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap semiconductor material, disposed on said first layer and forming a second active region of the device; a third layer composed of a relatively narrow energy bandgap semiconductor material disposed on said second layer and defining a quantum well having an energy band step such that carriers are confined in that layer; and a fourth layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on said third layer and forming a third active region of the device, and further comprising a first layer of metallic material disposed on said second layer of semiconductor material and making electrical contact with said second layer of semiconductor material for forming a first terminal of said device.
Claim 9
Dependent Claim
171 words
A semiconductor device implemented on a substrate comprising: a first layer of semiconductor material of a first conductivity type disposed on said substrate and forming a first active region of said device; a second layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap semiconductor material, disposed on said first layer and forming a second active region of the device; a third layer composed of a relatively narrow energy bandgap semiconductor material disposed on said second layer and defining a quantum well having an energy band step such that carriers are confined in that layer; and a fourth layer of semiconductor material of a first conductivity type composed of a relatively wide energy bandgap material disposed on said third layer and forming a third active region of the device, and further comprising a first layer of metallic material disposed on said second layer of semiconductor material and making electrical contact with said second layer of semiconductor material for forming a first terminal of said device.
Claim 10
Dependent Claim
20 words
A semiconductor device as defined in claim 7, wherein said first layer of semiconductor material is composed of gallium arsenide.
Claim 11
Dependent Claim
29 words
A semiconductor device as defined in claim 7, where said second layer is composed of Al x Ga 1-x As, where x is a positive number less than 1.
Claim 12
Dependent Claim
16 words
A semiconductor device as defined in claim 7, where said third layer is composed of GaAs.
Claim 13
Dependent Claim
29 words
A semiconductor device as defined in claim 7, wherein said second layer is composed of Al x Ga 1-x As, where x is a positive number less than 0.4.
Claim 14
Dependent Claim
22 words
A semiconductor device as defined in claim 11, where said fourth layer is composed of Al 0 .5 Ga 0 .5 As.
Claim 15
Dependent Claim
20 words
A semiconductor device as defined in claim 7, wherein said third layer has a thickness of less than 100 Angstroms.
Claim 16
Dependent Claim
43 words
A semiconductor device as defined in claim 7, further comprising a second layer of metallic material disposed on said first layer of semiconductor material and making electrical contact with said first layer of semiconductor material for forming a second terminal of said device.
Claim 17
Dependent Claim
43 words
A semiconductor device as defined in claim 7, further comprising a third layer of metallic material disposed on said fourth layer of semiconductor material and making electrical contact with said fourth layer of semiconductor material for forming a third terminal of said device.
Claim 18
Dependent Claim
45 words
A semiconductor device as defined in claim 7, where said first layer of metallic material is a composite composed of a first layer of titanium, a second layer of gold/germanium making contact with said third layer of semiconductor material, and a third layer of gold.
Claim 19
Dependent Claim
36 words
A semiconductor device as defined in claim 14, where said second layer of metallic material is a composite composed of a first layer of titanium, a second layer of gold/germanium, and a third layer of gold.
Claim 20
Dependent Claim
36 words
A semiconductor device as defined in claim 15, where said third layer of metallic material is a composite composed of a first layer of titanium, a second layer of gold/germanium, and a third layer of gold.
Claim 21
Dependent Claim
20 words
A device as defined in claim 7, wherein said first layer forms a collector region during operation of said device.
Claim 22
Dependent Claim
20 words
A device as defined in claim 7, wherein said second layer forms a source region during operation of said device.
Claim 23
Dependent Claim
20 words
A device as defined in claim 7, wherein said fourth layer forms a gate region during operation of said device.
References Cited (Backward Citations)
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