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EP0092645A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Transistor and circuit including a transistor

Assignee: International Business Machines Corp
•
Filing: 1983-02-01
•
Granted: —
•
Expires: 2003-02-01
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Abstract

Abstract O A field induced base ballistic majority carrier transfer transistor comprises first and second epitaxial semi- conductor regions (1, 2) of the same conductivity type, the conductivity of the second region (2) being lower than that of the first region (1) and the second region having a lower energy bandgap than the first region. An emitter electrode (5) is connected, via a high conductivity region (3) epitaxial with the second region (2), to the side of the second region remote from the interface (8). A base electrode (6) makes contact with a part of the second region adjacent the interface (8), and a collector electrode (7) is connected to the side of the first region (1) remote from the interface (8). If the transistor is formed of n-type materials, application of a bias voltage across the emitter and base electrodes produces an accumulation layer (9) which serves as the base of the transistor, in the second region (2) adjacent the interface (8).

Inventors

  • 👤 Paul Michael Solomon

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 10:57
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D48/362

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 97 words
A transistor comprising first and second epitaxial semi-conductor regions (1, 2) of the same conductivity type, the conductivity of the second region (2) being lower than that of the first region (1) and the second region having a lower energy bandgap than the first region, an emitter electrode (5) connected to the side of the second region remote from the interface (8), a base electrode (6) making contact with a part of the second region adjacent the interface (8), and a collector electrode (7) connected to the side of the first region remote from the interface (8).
Claim 2
Dependent Claim 97 words
A transistor comprising first and second epitaxial semi-conductor regions (1, 2) of the same conductivity type, the conductivity of the second region (2) being lower than that of the first region (1) and the second region having a lower energy bandgap than the first region, an emitter electrode (5) connected to the side of the second region remote from the interface (8), a base electrode (6) making contact with a part of the second region adjacent the interface (8), and a collector electrode (7) connected to the side of the first region remote from the interface (8).
Claim 3
Dependent Claim 50 words
A transistor as claimed in claim 1, in which the emitter electrode comprises a third semi-conductor region epitaxial with the second region, the third region having a higher conductivity than that of both said first and second regions and having the same bandgap as that of the second semi-conductor region.
Claim 4
Dependent Claim 28 words
A transistor as claimed in claim 2, in which the first semi- conductor region is of GaAIAs and the second and third semi- conductor regions are of GaAs.
Claim 5
Dependent Claim 35 words
A transistor as claimed in any preceding claim, in which the base electrode comprises a fourth semi-conductor region (4) of higher conductivity than that of the second region and forming an ohmic electrical contact therewith.
Claim 6
Dependent Claim 13 words
A transistor as claimed in any preceding claims, made of n-type conductivity materials.
Claim 7
Dependent Claim 33 words
A circuit including a transistor structure as claimed in any preceding claim, and means to apply such a bias voltage across the emitter and base electrodes that electrical conduction occurs across the interface.

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