US4829459A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Programmable voltage offset circuit
Assignee: Lockheed Martin Tactical Systems Inc
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Filing: 1987-11-23
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Granted: 1989-05-09
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Expires: 2007-11-23
Abstract
Abstract A programmable voltage offset circuit (PVOC) (1) comprises a temporary latch memory (7); a latch disable circuit (5) which selects that PVOC (1) among several such circuits which may be simultaneously present on the same semiconductor chip; a resistor array (3); and a programmable nonvolatile memory (37). The desired voltage offsets V(OFFSET)s are temporarily produced in an iterative manner using the latch memory (7). Quasi-permanent voltage offsets V(OFFSET)s are then programmed using the nonvolatile memories (37), each of which typically comprises an EPROM (39). Application of an avalanche voltage V(STORE) to a PFET (43) portion of the EPROM (39) causes the PFET (43) to avalanche, thereby selectively programming the nonvolatile memory (37), depending upon the status of a signal supplied from the latch memory (7).
Inventors
- 👤 Michael J. McNutt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:17
CPC Classifications
G; G06; G06J; G06J1/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
107 words
Apparatus for simultaneously producing several offset voltages, comprising: several programmable voltage offset circuits, each comprising: a digital latch memory; coupled to an input of the latch memory, a latch disable circuit for selectively releasing the contents of the latch memory; coupled to an output of the latch memory, a resistor array which outputs a voltage offset; and associated with the resistor array, a programmable nonvolatile memory; wherein desired offset voltages are initially produced by inputting voltage information into the latch memories and subsequently releasing said information to the resistor arrays via the latch disable circuits, while more permanent voltage offsets are subsequently programmed into the nonvolatile memories.
Claim 2
Dependent Claim
107 words
Apparatus for simultaneously producing several offset voltages, comprising: several programmable voltage offset circuits, each comprising: a digital latch memory; coupled to an input of the latch memory, a latch disable circuit for selectively releasing the contents of the latch memory; coupled to an output of the latch memory, a resistor array which outputs a voltage offset; and associated with the resistor array, a programmable nonvolatile memory; wherein desired offset voltages are initially produced by inputting voltage information into the latch memories and subsequently releasing said information to the resistor arrays via the latch disable circuits, while more permanent voltage offsets are subsequently programmed into the nonvolatile memories.
Claim 3
Dependent Claim
46 words
The apparatus of claim 1 further comprising: voltage setting means coupled to each latch memory; and circuit select means coupled to each latch disable circuit for selectively determining which programmable voltage offset circuit will have the contents of its latch memory forwarded to its resistor array.
Claim 4
Dependent Claim
32 words
The apparatus of claim 2 wherein the voltage setting means outputs a binary code to each latch memory, and the circuit select means outputs a binary code to each latch disable circuit.
Claim 5
Dependent Claim
31 words
The apparatus of claim 1 wherein each resistor array comprises several resistors whose values form a binary progression; and each resistor in the array is driven by an inverting buffer amplifier.
Claim 6
Dependent Claim
44 words
The apparatus of claim 1 wherein the several offset voltages are fed to a CCD; all the components recited in claim 1 are fabricated using CMOS technology; and the CCD and all the components recited in claim 1 reside on the same semiconductor chip.
Claim 7
Dependent Claim
53 words
The apparatus of claim 1 further comprising: coupled to each nonvolatile memory: a conductor conveying one bit from the associated latch memory and an avalanche voltage power supply; wherein applying an avalanche voltage to the nonvolatile memory selectively programs the nonvolatile memory, depending upon the status of the bit from the latch memory.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-08 | 2000-11-07 | 2001-05-09 | $7700.00 | Window Closed / Lapsed |