US4829349A
Expired / Lapsed
US
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Transistor having voltage-controlled thermionic emission
Assignee: BELL TELPHONE LABORATORIES INCORPORATED A CORP NY
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Filing: 1983-06-30
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Granted: 1989-05-09
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Expires: 2003-06-30
Abstract
Abstract A transistor device using an interdigitated gate and electrode surface structure to control thermionic emission over a potential barrier is described. Complementary logic structures comprising such transistors are discussed.
Inventors
- 👤 Sergey Luryi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/202; H10D62/00; H10D62/60; H10D62/605
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
43 words
A device comprising a substrate having a first conductivity type, a first layer disposed on said substrate and having intrinsic conductivity, gate and anode electrodes disposed on the surface of said intrinsic conductivity layer, said gate and anode electrodes forming an interdigitated structure.
Claim 2
Independent Claim
43 words
A device comprising a substrate having a first conductivity type, a first layer disposed on said substrate and having intrinsic conductivity, gate and anode electrodes disposed on the surface of said intrinsic conductivity layer, said gate and anode electrodes forming an interdigitated structure.
Claim 3
Dependent Claim
34 words
A device as recited in claim 1 in which said first layer further comprises a thin and highly doped layer, said thin and highly doped layer being disposed between said surface and said substrate.
Claim 4
Dependent Claim
34 words
A device as recited in claim 2 in which said thin and highly doped layer is spaced from said surface by a distance greater than or equal to the period of said interdigitated structure.
Claim 5
Dependent Claim
27 words
A device as recited in claim 3 in which said thin and highly doped layer has a doping concentration of at least 10 18 cm -3 .
Claim 6
Dependent Claim
24 words
A device as recited in claim 4 in which said thin and highly doped layer has a thickness less than approximately 10 -6 cm.
Claim 7
Dependent Claim
20 words
A device as recited in claim 5 in which the period of said interdigitated structure is less than 1.0 μm.
Claim 8
Dependent Claim
13 words
A plurality of devices as recited in claim 6 disposed on said substrate.
Claim 9
Dependent Claim
15 words
A device as recited in claim 7 in which said first conductivity type is n-type.
Claim 10
Dependent Claim
27 words
A device as recited in claim 1 further comprising a highly doped region having said second conductivity type and electrically contacting said substrate and said first layer.
Claim 11
Dependent Claim
15 words
A device as recited in claim 9 in which said first conductivity type is p-type.
Claim 12
Dependent Claim
20 words
A device as recited in claim 10 in which the period of said interdigitated structure is less than 1.0 μm.
Claim 13
Dependent Claim
13 words
A plurality of devices as recited in claim 11 disposed on said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-08 | 2000-11-07 | 2001-05-09 | $7700.00 | Window Closed / Lapsed |