Patent US4829346A successfully refreshed from Google Patents.
US4829346A
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Field-effect transistor and the same associated with an optical semiconductor device
Assignee: NEC Corp
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Filing: 1988-01-05
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Granted: 1989-05-09
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Expires: 2008-01-05
Abstract
Abstract A field-effect transistor comprises a semi-insulating InP substrate, a strained buffer layer of Al X Ga 1-X As grown on the substrate, and an active layer of GaAs. The active layer is eased in regard to the influence of the lattice mismatching between the active layer and substrate. Such a field-effect transistor is associated with an optical device in a monolithic manner on a common semi-insulating InP substrate.
Inventors
- 👤 Kensuke Kasahara
- 👤 Tomoji Terakado
- 👤 Yasumasa Inomoto
- 👤 Akira Suzuki
- 👤 Tomohiro Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 01:59
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103; H10D; H10D30/00; H10D30/80; H10D30/87; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10H; H10H29/00; H10H29/10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0261
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
75 words
A field-effect transistor comprising, a semi-insulating InP substrate, a strained buffer layer grown on said semi-insulating InP substrate, an active layer of GaAs grown on said strained buffer layer, a gate electrode for controlling said active layer, and source and drain electrodes which are in ohmic contact with said active layer, wherein the presence of said strained buffer layer reduces the influence of the lattice mismatching between said active layer and said semi-insulating InP substrate.
Claim 2
Dependent Claim
75 words
A field-effect transistor comprising, a semi-insulating InP substrate, a strained buffer layer grown on said semi-insulating InP substrate, an active layer of GaAs grown on said strained buffer layer, a gate electrode for controlling said active layer, and source and drain electrodes which are in ohmic contact with said active layer, wherein the presence of said strained buffer layer reduces the influence of the lattice mismatching between said active layer and said semi-insulating InP substrate.
Claim 3
Dependent Claim
34 words
A field-effect transistor according to claim 1, wherein said GaAs of said active layer is n-type, and said strained buffer layer is of Al X Ga 1-X As where X is zero to one.
Claim 4
Dependent Claim
15 words
A field-effect transistor according to claim 1, wherein said strained buffer layer is of GaAs.
Claim 5
Dependent Claim
15 words
A field-effect transistor according to claim 1, wherein said strained buffer layer is of AlAs.
Claim 6
Dependent Claim
17 words
A field-effect transistor according to claim 1, wherein said strained buffer layer is of a super-lattice layer.
Claim 7
Dependent Claim
66 words
A field-effect transistor associated with an optical device comprising, a semi-insulating InP substrate, a field-effect transistor consisting of GaAs system semiconductor including AlGaAs, and an optical device consisting of InP system semiconductor including InGaAs and InGaAsP which are respectively provided in a monolithic state on said semi-insulating InP substrate, and a strained buffer layer which is positioned between said semi-insulating InP substrate and said field-effect transistor.
Claim 8
Dependent Claim
66 words
A field-effect transistor associated with an optical device comprising, a semi-insulating InP substrate, a field-effect transistor consisting of GaAs system semiconductor including AlGaAs, and an optical device consisting of InP system semiconductor including InGaAs and InGaAsP which are respectively provided in a monolithic state on said semi-insulating InP substrate, and a strained buffer layer which is positioned between said semi-insulating InP substrate and said field-effect transistor.
Claim 9
Dependent Claim
68 words
A field-effect transistor associated with an optical device according to claim 6, wherein said strained buffer layer is of Al X Ga 1-X As, where X is zero to one, and said field-effect transistor includes an active layer of GaAs grown on said strained buffer layer, a gate electrode for controlling said active layer, and source and drain electrodes which are in ohmic contact with said active layer.
Claim 10
Dependent Claim
61 words
A field-effect transistor associated with an optical device according to claim 6, wherein said strained buffer layer is of a GaAs layer, and said field-effect transistor includes an active layer of GaAs grown on said strained buffer layer, a gate electrode for controlling said active layer, and a source and drain electrodes which are in ohmic contact with said active layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-05-08 | 1992-11-07 | 1993-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-08 | 1996-11-07 | 1997-05-09 | $3760.00 | Window Closed / Lapsed |
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