Electronic semiconductor device for protecting integrated circuits against electrostatic discharges

Claim 1

An electronic semiconductor device for protecting an integrated circuit against electrostatic discharges comprising two diodes connected back to back, said diodes comprising a substrate of a first conductivity type, an epitaxial layer of a second conductivity type extending between an outer face of the device and said substrate, a buried layer having a second conductivity type, substantially opposite to said first conductivity type, said buried layere extending between said substrate and said epitaxial layer, first and second simultaneously implanted regions of said first conductivity type substantially including said first conductivity type substrate, said first and second regions being highly-doped with respect to said substrate and extending in said substrate and in said epitaxial layer in contact with said buried layer on two opposite sides thereof, thereby forming with said buried layer two P-N junctions, and a connection zone of said first conductivity type, which is highly-doped with respect to said substrate, and substantially includes said first conductivity type substrate, said connection zone extending through said epitaxial layer, between said outer face of said device and said first region.