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Method of forming a thin aluminum film

Assignee: Nissin Electric Co Ltd
•
Filing: 1987-11-27
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Granted: 1989-05-09
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Expires: 2007-11-27
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Abstract

Abstract A method for depositing a thin aluminum film in a vacuum on a surface of a substrate which comprises the steps of: (a) Irradiating the surface of the substrate with a beam of ions of an inert gas, having a kinetic energy ranging from 100 eV to 1,000 eV at an angle of incidence ranging from about 0° to 60° to a normal of the surface. (b) Depositing vaporized aluminum on the surface of the substrate, in which the ratio of the amount of ions irradiating the surface to the amount of vapor deposited on the surface ranges from about 0.5% to 30% and wherein the temperature of the substrate ranges from about room temperature to 300° C.

Inventors

  • 👤 Yasunori Ando
  • 👤 Kiyoshi Ogata

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 13:24
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/51; C04B41/80; C04B41/81; C04B41/85; C04B41/88; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/18; C23C14/22; C04B2111/00; C04B2111/00474; C04B2111/00844

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 130 words
A method for forming a thin aluminum film in a vacuum on a surface of a substrate comprising the steps of: (a) irradiating said surface of said substrate with a beam of ions of an inert gas or aluminum, said beam having an angle of incidence ranging from about 0° to 60° to the normal of said surface, and said ions having a kinetic energy ranging from 100 eV to 1,000 eV; and (b) depositing vaporized aluminum on said surface of said substrate while irradiating with said ions, in which the ratio of the amount of ions irradiating said surface to the amount of vapor deposited on said surface ranges from about 0.005 to 0.3, and wherein the temperature of said substrate ranges from about room temperature to 300° C.
Claim 2
Independent Claim 130 words
A method for forming a thin aluminum film in a vacuum on a surface of a substrate comprising the steps of: (a) irradiating said surface of said substrate with a beam of ions of an inert gas or aluminum, said beam having an angle of incidence ranging from about 0° to 60° to the normal of said surface, and said ions having a kinetic energy ranging from 100 eV to 1,000 eV; and (b) depositing vaporized aluminum on said surface of said substrate while irradiating with said ions, in which the ratio of the amount of ions irradiating said surface to the amount of vapor deposited on said surface ranges from about 0.005 to 0.3, and wherein the temperature of said substrate ranges from about room temperature to 300° C.
Claim 3
Dependent Claim 21 words
A method as claimed in claim 1, wherein said inert gas is selected from the group comprising Ne, Ar and He.
Claim 4
Dependent Claim 12 words
A method as claimed in claim 1, wherein said ion is aluminum.
Claim 5
Dependent Claim 26 words
A method as claimed in claim 1, wherein said substrate is fabricated from a material selected from the group consisting of Si and SiO 2 .
Claim 6
Dependent Claim 16 words
A method as claimed in claim 1, wherein said irradiating and depositing steps are performed simultaneously.
Claim 7
Dependent Claim 17 words
A method as claimed in claim 1, wherein said angle of incidence ranges from 20° to 30°.
Claim 8
Dependent Claim 14 words
A method as claimed in claim 1, wherein said angle of incidence is 0°.
Claim 9
Dependent Claim 17 words
A method as claimed in claim 1, wherein said angle of incidence ranges from 10° to 40°.

References Cited (Backward Citations)

US4683149A Cited
US4634600A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-05-08 1992-11-07 1993-05-09 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-05-08 1996-11-07 1997-05-09 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-05-08 2000-11-07 2001-05-09 $7700.00 Window Closed / Lapsed

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