Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
193 words
An integrated memory circuit in which memory cells are arranged in columns and in which each column is connected to two bit lines, and in which, for writing information into a memory cell of a column, that memory cell can be selected by means of selection means, which selection means connect the memory cell to the two bit lines and connect the two bit lines to a data bus for supplying information to the memory cell, each of the two bit lines being connected, via a respective load, to a first supply terminal, the data bus comprising a line which supplies a signal to a first bit line, inverting means being provided per column that generate a logically complementary signal on a second bit line, whereby upon selecting a column the first bit line in said column is connected to the data bus, characterized in that the inverting means comprise a single first transistor and the load on the second bit line, the first transistor having a conduction path placed between the second bit line and a second supply terminal and having a control electrode connected to said line of the data bus.
Claim 2
Dependent Claim
193 words
An integrated memory circuit in which memory cells are arranged in columns and in which each column is connected to two bit lines, and in which, for writing information into a memory cell of a column, that memory cell can be selected by means of selection means, which selection means connect the memory cell to the two bit lines and connect the two bit lines to a data bus for supplying information to the memory cell, each of the two bit lines being connected, via a respective load, to a first supply terminal, the data bus comprising a line which supplies a signal to a first bit line, inverting means being provided per column that generate a logically complementary signal on a second bit line, whereby upon selecting a column the first bit line in said column is connected to the data bus, characterized in that the inverting means comprise a single first transistor and the load on the second bit line, the first transistor having a conduction path placed between the second bit line and a second supply terminal and having a control electrode connected to said line of the data bus.
Claim 3
Dependent Claim
40 words
A memory circuit as claimed in claim 1, characterized in that upon selecting one of two juxtaposed columns the respective rsecond bit line is connected to the second supply terminal via a first transistor which is common to both columns.
Claim 4
Dependent Claim
65 words
A memory circuit as claimed in claim 1 or 2, characterized in that of two juxtaposed columns in a layout of the memory circuit a first bit line of a first column crosses a second bit line of a second column between column selection lines belonging to said two columns and an area in which all the memory cells of said two columns are present.
Claim 5
Dependent Claim
55 words
A memory circuit as claimed in claim 1 or 2, characterized in that in a lay-out of the memory circuit upon selecting one of two juxtaposed columns a respective second bit line is connected, via a respective first transistor, to the second supply terminal means of a contact point which is common to both columns.
Claim 6
Dependent Claim
48 words
A memory circuit as claimed in claim 1 or 2, characterized in that in a lay-out of the memory circuit upon selecting one of two juxtaposed columns the respective first bit line is connected to the data bus via a contact point which is common to both columns.