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US4822751A
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Method of producing a thin film semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1987-03-31
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Granted: 1989-04-18
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Expires: 2007-03-31
Abstract
Abstract A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.
Inventors
- 👤 Akira Ishizu
- 👤 Tadashi Nishimura
- 👤 Yasuo Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 17:08
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/40; H10D86/60; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
70 words
A method of producing a thin film semiconductor device, comprising the steps of: preparing a substrate, forming a patterned metal thin film on said substrate, forming an insulating layer on said metal thin film, and forming a patterned semiconductor thin film active layer, which overlies and is self-aligned to said patterned metal thin film, by laser CVD wherein a laser beam is scanned unselectively across the surface of said substrate.
Claim 2
Independent Claim
70 words
A method of producing a thin film semiconductor device, comprising the steps of: preparing a substrate, forming a patterned metal thin film on said substrate, forming an insulating layer on said metal thin film, and forming a patterned semiconductor thin film active layer, which overlies and is self-aligned to said patterned metal thin film, by laser CVD wherein a laser beam is scanned unselectively across the surface of said substrate.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said substrate is formed of quartz.
Claim 4
Dependent Claim
15 words
A method according to claim 1, wherein said metal thin film is formed of chromium.
Claim 5
Dependent Claim
15 words
A method according to claim 1, wherein said insulating film is formed of silicon oxide.
Claim 6
Dependent Claim
18 words
A method according to claim 1, wherein said laser CVD step is conducted in an SiH 4 atmosphere.
Claim 7
Dependent Claim
15 words
A method according to claim 1, wherein said laser CVD step uses an argon laser.
Claim 8
Dependent Claim
37 words
The method of claim 1, further comprising the subsequent steps of forming a gate oxide on at least a portion of said active layer, and forming a gate on at least a portion of said gate oxide.
Claim 9
Dependent Claim
49 words
The method of claim 1, further comprising the subsequent steps of forming a gate oxide on at least a portion of said active layer, forming a gate on at least a portion of said gate oxide, and providing source and drain electrodes contacting respective portions of said active layer.
Claim 10
Dependent Claim
10 words
The method of claim 1, wherein said substrate is transparent.
Claim 11
Independent Claim
75 words
A method of producing a thin film semiconductor device, comprising the steps of: preparing a substrate, forming a patterned metal thin film on said substrate, forming an insulating layer on said metal thin film, and forming a patterned semiconductor thin film active layer, which overlies and is self-aligned to said patterned metal thin film, by laser CVD; wherein, during said laser CVD step, a laser beam is scanned unselectively across the surface of said substrate.
Claim 12
Independent Claim
75 words
A method of producing a thin film semiconductor device, comprising the steps of: preparing a substrate, forming a patterned metal thin film on said substrate, forming an insulating layer on said metal thin film, and forming a patterned semiconductor thin film active layer, which overlies and is self-aligned to said patterned metal thin film, by laser CVD; wherein, during said laser CVD step, a laser beam is scanned unselectively across the surface of said substrate.
References Cited (Backward Citations)
US4624737A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |