US4822748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photosensor with enhanced quantum efficiency
Assignee: California Institute of Technology
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Filing: 1987-08-24
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Granted: 1989-04-18
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Expires: 2007-08-24
Abstract
Abstract A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO 2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95° C. which takes less than one hour to grow.
Inventors
- 👤 James R. Janesick
- 👤 Stythe T. Elliott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:14
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; Y; Y10; Y10S; Y10S438/00; Y10S438/91; Y10S438/977
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
150 words
A method of improving the quantum efficiency of a charge-coupled-device image sensor having an array of pixels and charge transfer gates for reading out image charges from wells of said array of pixels in a layer of photosensitive semiconductor material produced on a substrate material, where the quantum efficiency is improved for blue, ultraviolet, far ultraviolet and low energy x-ray wavelengths comprised of the steps of overthinning the backside of said charge-coupled-device image sensor to remove all substrate material, and covering the overthinned backside with a thin oxide film, thereby leaving a depletion region just under said thin oxide film over said overthinned photosensitive semiconductor material as a result of thinning, and flooding the backside of said thinned photosensitive semiconductor material with intense ultraviolet radiation prior to using said charge-coupled-device imaging sensor thereby producing an accumulation layer of holes to greatly increase the quantum efficiency of said charge-coupled-device imaging sensor.
Claim 2
Independent Claim
150 words
A method of improving the quantum efficiency of a charge-coupled-device image sensor having an array of pixels and charge transfer gates for reading out image charges from wells of said array of pixels in a layer of photosensitive semiconductor material produced on a substrate material, where the quantum efficiency is improved for blue, ultraviolet, far ultraviolet and low energy x-ray wavelengths comprised of the steps of overthinning the backside of said charge-coupled-device image sensor to remove all substrate material, and covering the overthinned backside with a thin oxide film, thereby leaving a depletion region just under said thin oxide film over said overthinned photosensitive semiconductor material as a result of thinning, and flooding the backside of said thinned photosensitive semiconductor material with intense ultraviolet radiation prior to using said charge-coupled-device imaging sensor thereby producing an accumulation layer of holes to greatly increase the quantum efficiency of said charge-coupled-device imaging sensor.
Claim 3
Dependent Claim
129 words
A method as defined in claim 1 wherein said photosensitive semiconductor material is p-doped silicon epitaxially grown on a p + substrate, and overthinning is carried out beyond the epitaxial interface between said substrate and said photosensitive semiconductor material, and wherein said backside flooding with ultraviolet photons produces photoemitted electrons that migrate to said oxide film where electron traps capture the migrating electrons to build up a negative charge on the surface of said oxide film, thereby promoting valence and conduction band within the silicon bending from a downward to an upward direction from the innermost part of said depletion region to said thin oxide film and an accumulation of holes at the interface of the oxide with the p-doped silicon, thereby causing unwanted backside potential wells to collapse.
Claim 4
Dependent Claim
24 words
A method as defined in claim 2 wherein said photosensitive semiconductor material is thinned to about 8 to 10 μm of said epitaxial material.
Claim 5
Dependent Claim
33 words
A method as defined in claim 1 wherein said thin oxide film is produced as a natural consequence of long exposure to oxygen and water in the atmosphere to produce a native oxide.
Claim 6
Dependent Claim
29 words
A method as defined in claim 1 wherein said thin oxide film is grown in about one hour in the presence of deionized water maintained at about 95° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |