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US4040092A Expired / Lapsed US ⏱️ 0.0 years remaining

Smear reduction in ccd imagers

Assignee: RCA Corp
•
Filing: 1976-08-04
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Granted: 1977-08-02
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Expires: 1996-08-04
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Abstract

Abstract Radiation illuminating the A register of a charge-coupled device (CCD) imager of the field transfer type during the transfer of a field from the A to the B register results in smear in the reproduced image. Such smear is reduced in a rear surface illuminated imager by forming a depletion region at said rear surface during the A to B transfer time. Charge carriers which are excited in the substrate during this period preferentially remain at the rear surface where they are passed to a drain rather than flowing to the potential wells whose contents are being shifted from the A to the B register.

Inventors

  • 👤 James Edward Carnes

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 10:44
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 231 words
A method of operating a charge coupled imager of the type including an imaging area having a semiconductor substrate and columns and rows of electrodes adjacent to one surface of the substrate, means during successive integration times during which an image is projected onto the opposite surface of said substrate for maintaining certain of the electrodes at a potential to form potential wells in the substrate and other of the electrodes at a potential to form potential barriers in the substrate between adjacent potential wells, and which also includes means operative during a transfer time upon the completion of each integration time for applying multiple phase voltages to said electrodes for transferring a field of charge signals which have accumulated in said potential wells out of said imaging area, comprising the steps of: creating a depletion region at said opposite surface of said substrate during each transfer time for at least a substantial portion of the duration of each transfer time and of a depth sufficient to retain within said depletion region at least a substantial portion of the charge signals induced by the projected image during each transfer time, but of insufficient depth to prevent the transfer of said field of charge signals out of said imaging area; draining away said retained charge signals; and removing said depletion region during each integration time for the duration of said integration time.
Claim 2
Independent Claim 231 words
A method of operating a charge coupled imager of the type including an imaging area having a semiconductor substrate and columns and rows of electrodes adjacent to one surface of the substrate, means during successive integration times during which an image is projected onto the opposite surface of said substrate for maintaining certain of the electrodes at a potential to form potential wells in the substrate and other of the electrodes at a potential to form potential barriers in the substrate between adjacent potential wells, and which also includes means operative during a transfer time upon the completion of each integration time for applying multiple phase voltages to said electrodes for transferring a field of charge signals which have accumulated in said potential wells out of said imaging area, comprising the steps of: creating a depletion region at said opposite surface of said substrate during each transfer time for at least a substantial portion of the duration of each transfer time and of a depth sufficient to retain within said depletion region at least a substantial portion of the charge signals induced by the projected image during each transfer time, but of insufficient depth to prevent the transfer of said field of charge signals out of said imaging area; draining away said retained charge signals; and removing said depletion region during each integration time for the duration of said integration time.
Claim 3
Dependent Claim 271 words
A CCD imager system comprising, in combination: a CCD imager of the type including an A register having a substrate onto the back surface of which an image is projected, said register including a plurality of columns and a plurality of rows of integrating electrodes adjacent to the front surface of said substrate which during successive intervals of time, hereafter termed "integration periods," are maintained at a potential such that depletion regions are formed in the substrate for collecting charges in response to said projected image, and a masked B register comprising columns and rows of charge storage locations to which the charge pattern of the A register is shifted once each field time, after each field has been integrated in the A register and while the A register remains unmasked; a backplate electrode adjacent to and insulated from the back surface of said substrate of said A register and covering at least the major portion of said back surface; means operative during substantially each entire period said charge pattern is being shifted from the A to the B register for maintaining said backplate electrode at a potential to form a depletion region at the back surface of said substrate, and operative during substantially each entire integration period for maintaining said backplate electrode at a potential such that no depletion region is present at the back surface of said substrate; and means operative during substantially each entire period said charge pattern is being shifted from said A to said B register for draining away any charge carriers which accumulate in said depletion region adjacent to said back surface of said substrate.
Claim 4
Dependent Claim 271 words
A CCD imager system comprising, in combination: a CCD imager of the type including an A register having a substrate onto the back surface of which an image is projected, said register including a plurality of columns and a plurality of rows of integrating electrodes adjacent to the front surface of said substrate which during successive intervals of time, hereafter termed "integration periods," are maintained at a potential such that depletion regions are formed in the substrate for collecting charges in response to said projected image, and a masked B register comprising columns and rows of charge storage locations to which the charge pattern of the A register is shifted once each field time, after each field has been integrated in the A register and while the A register remains unmasked; a backplate electrode adjacent to and insulated from the back surface of said substrate of said A register and covering at least the major portion of said back surface; means operative during substantially each entire period said charge pattern is being shifted from the A to the B register for maintaining said backplate electrode at a potential to form a depletion region at the back surface of said substrate, and operative during substantially each entire integration period for maintaining said backplate electrode at a potential such that no depletion region is present at the back surface of said substrate; and means operative during substantially each entire period said charge pattern is being shifted from said A to said B register for draining away any charge carriers which accumulate in said depletion region adjacent to said back surface of said substrate.

References Cited (Backward Citations)

US3576392A Cited
US3934161A Cited
US3940602A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1980-08-01 1981-01-31 1981-08-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1984-08-01 1985-01-31 1985-08-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1988-08-01 1989-01-31 1989-08-02 $7700.00 Window Closed / Lapsed

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