Patent US4822697A successfully refreshed from Google Patents.
US4822697A
Expired / Lapsed
US
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Platinum and rhodium catalysis of low temperature formation multilayer ceramics
Assignee: Dow Silicones Corp
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Filing: 1986-12-03
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Granted: 1989-04-18
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Expires: 2006-12-03
Abstract
Abstract This invention relates to materials produced by diluting in a solvent a platinum or rhodium catalyzed preceramic mixture of a hydrogen silsesquioxane resin. The preceramic mixture solvent solution is applied to a substrate and ceramified by heating. One or more ceramic coatings containing silicon carbon, silicon nitrogen, or silicon carbon nitrogen can be applied over the ceramified SiO 2 coating. A CVD or PECVD top coating can be applied for further protection. The invention is particularly useful for coating electronic devices.
Inventors
- 👤 Loren A. Haluska
- 👤 Keith W. Michael
- 👤 Leo Tarhay
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:44
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/476; C; C04; C04B; C04B41/00; C04B41/45; B; B01; B01J; B01J23/00; B01J23/38; B01J23/40; C04B41/50; C04B41/5025; C04B41/5035; C04B41/5053; C04B41/5062; C04B41/5066; C04B41/52; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/122; C23C18/1225; C23C18/125; C23C18/1275; C23C18/1295; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6925; H10P14/694; H10P14/6943; H10P14/69433; H10W74/01; H10W74/43; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/6342; H10P14/665; H10P14/6682; H10P14/6684; H10P14/6686; H10P14/69215
Claims Analysis
Total Claims: 68
Claim 1
Independent Claim
802 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of an alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce the passivating ceramic or ceramic-like coating, and (III) applying to the passivating ceramic or ceramic-like coating a silicon-containing coating selected from the group consisting of (i) silicon coating, (ii) silicon carbon-containing coating, (iii) silicon nitrogen-containing coating, and (iv) silicon carbon nitrogen coating, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a halosilane, halodisilane, halopolysilane or mixtures thereof, and wherein the silicon carbon coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of an alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, and (C) ceramification of a silicon and nitrogen-containing preceramic polymer, and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 2
Dependent Claim
802 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like planarizing coating; (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) a silicon nitrogen-containing coating, (ii) a silicon carbon-containing coating, and (iii) a silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of an alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, to produce the passivating ceramic or ceramic-like coating, and (III) applying to the passivating ceramic or ceramic-like coating a silicon-containing coating selected from the group consisting of (i) silicon coating, (ii) silicon carbon-containing coating, (iii) silicon nitrogen-containing coating, and (iv) silicon carbon nitrogen coating, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a halosilane, halodisilane, halopolysilane or mixtures thereof, and wherein the silicon carbon coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of an alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, and (C) ceramification of a silicon and nitrogen-containing preceramic polymer, and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, to produce the silicon-containing coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on the electronic device.
Claim 3
Dependent Claim
10 words
An electronic device coated by the process of claim 1.
Claim 4
Dependent Claim
43 words
A process as claimed in claim 1 wherein the coating technique used to deposit the catalyzed diluted hydrogen silsesquioxane resin preceramic material solution onto the electronic device is selected from the group consisting of spray coating, dip coating, flow coating and spin coating.
Claim 5
Dependent Claim
33 words
A process as claimed in claim 1 wherein the coated device is heated to a temperature in the range of 200 to 400 degrees Centigrade to produce the ceramic or ceramic-like planarizing coating.
Claim 6
Dependent Claim
21 words
An electronic devise containing an interlevel dielectric layer wherein the interlevel dielectric layer is formed by the process of claim 1.
Claim 7
Dependent Claim
454 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) silicon nitrogen-containing coating, (ii) silicon carbon-containing coating, and (iii) silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of an alkylsilane, silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a an alkylsilane, silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or alkylsilane, to produce the passivating ceramic or ceramic-like coating, whereby a dual layer, ceramic or ceramic-like coating is obtained on the electronic device.
Claim 8
Dependent Claim
454 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like, coating which process comprises: (I) (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like planarizing coating; and (II) applying to the ceramic or ceramic-like planarizing coating a passivating coating selected from the group consisting of (i) silicon nitrogen-containing coating, (ii) silicon carbon-containing coating, and (iii) silicon carbon nitrogen-containing coating, wherein the silicon nitrogen-containing coating is applied onto the planarizing coating of the electronic device by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (c) ceramification of a silicon and nitrogen-containing preceramic polymer; and wherein the silicon carbon nitrogen-containing coating is applied onto the ceramic or ceramic-like coated electronic device by a means selected from the group consisting of (1) chemical vapor deposition of hexamethyldisilazane, (2) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (3) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (4) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia; and wherein the silicon carbon-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of an alkylsilane, silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and (ii) plasma enhanced chemical vapor deposition of a an alkylsilane, silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or alkylsilane, to produce the passivating ceramic or ceramic-like coating, whereby a dual layer, ceramic or ceramic-like coating is obtained on the electronic device.
Claim 9
Dependent Claim
10 words
An electronic device coated by the process of claim 6.
Claim 10
Dependent Claim
21 words
An electronic device containing an interlevel dielectric layer wherein the interlevel dielectric layer is formed by the process of claim 6.
Claim 11
Dependent Claim
142 words
A process for forming on a substrate a monolayer, ceramic or ceramic like, planarizing coating which process comprises: (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to thereby produce on the electronic device a monolayer, ceramic or ceramic like, planarizing coating.
Claim 12
Dependent Claim
142 words
A process for forming on a substrate a monolayer, ceramic or ceramic like, planarizing coating which process comprises: (A) coating an electronic device with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to an electronic device; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the electronic device; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to thereby produce on the electronic device a monolayer, ceramic or ceramic like, planarizing coating.
Claim 13
Dependent Claim
10 words
An electronic device coated by the process of claim 9.
Claim 14
Dependent Claim
21 words
An electronic device containing an interlevel dielectric layer wherein the interlevel dielectric layer is formed by the process of claim 9.
Claim 15
Dependent Claim
192 words
A process for forming on a substrate a multilayer, ceramic or ceramic like, coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at a temperature of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof in the vapor phase, at a temperature between 200 and 600 degrees Centigrade, in the presence of the ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 16
Dependent Claim
192 words
A process for forming on a substrate a multilayer, ceramic or ceramic like, coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at a temperature of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof in the vapor phase, at a temperature between 200 and 600 degrees Centigrade, in the presence of the ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 17
Dependent Claim
21 words
A process as claimed in claim 12 wherein the silicon coating is applied by means of plasma enhanced chemical vapor deposition.
Claim 18
Dependent Claim
10 words
An electronic device coated by the process of claim 13.
Claim 19
Dependent Claim
21 words
A process as claimed in claim 12 wherein the silicon coating is applied by means of metal assisted chemical vapor deposition.
Claim 20
Dependent Claim
10 words
An electronic device coated by the process of claim 15.
Claim 21
Dependent Claim
10 words
An electronic device coated by the proces of claim 12,
Claim 22
Dependent Claim
195 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof, and ammonia, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 23
Dependent Claim
195 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane, or mixture thereof, and ammonia, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 24
Dependent Claim
22 words
A process as claimed in claim 18 wherein the silicon nitrogen-containing coating is applied by means of plasma enhanced chemical vapor deposition.
Claim 25
Dependent Claim
10 words
An electronic device coated by the process of claim 19.
Claim 26
Dependent Claim
22 words
A process as claimed in claim 18 wherein the silicon nitrogen-containing coating is applied by means of metal assisted chemical vapor deposition.
Claim 27
Dependent Claim
10 words
An electronic device coated by the process of claim 21.
Claim 28
Dependent Claim
10 words
An electronic device coated by the process of claim 5.
Claim 29
Dependent Claim
205 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber an alkylsilane, silane, halosilane, halodisilane, halopolysilane, or mixture thereof, and an alkane of one to six carbon atoms or alkylsilane, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 30
Dependent Claim
205 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber an alkylsilane, silane, halosilane, halodisilane, halopolysilane, or mixture thereof, and an alkane of one to six carbon atoms or alkylsilane, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 31
Dependent Claim
22 words
A process as claimed in claim 24 wherein the silicon carbon-containing coating is applied by means of plasma enhanced chemical vapor deposition.
Claim 32
Dependent Claim
10 words
An electronic device coated by the process of claim 25.
Claim 33
Dependent Claim
22 words
A process as claimed in claim 24 wherein the silicon carbon-containing coating is applied by means of metal assisted chemical vapor deposition.
Claim 34
Dependent Claim
10 words
An electronic device coated by the process of claim 27.
Claim 35
Dependent Claim
10 words
An electronic device coated by the process of claim 24.
Claim 36
Dependent Claim
187 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of decomposing in a reaction chamber hexamethyldisilazane, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 37
Dependent Claim
187 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of decomposing in a reaction chamber hexamethyldisilazane, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 38
Dependent Claim
23 words
A process as claimed in claim 30 wherein the silicon carbon nitrogen-containing coating is applied by means of plasma enhanced chemical vapor deposition.
Claim 39
Dependent Claim
10 words
An electronic device coated by the process of claim 31.
Claim 40
Dependent Claim
23 words
A process as claimed in claim 30 wherein the silicon carbon nitrogen-containing coating is applied by means of metal assisted chemical vapor deposition.
Claim 41
Dependent Claim
10 words
An electronic device coated by the process of claim 33.
Claim 42
Dependent Claim
10 words
An electronic device coated by the process of claim 30.
Claim 43
Dependent Claim
300 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with the catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating and (B) applying to the ceramic or ceramic-like coating on the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature of 150 to 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coating on the electronic device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane or mixture thereof in the vapor phase, at a temperature between 200 and 600 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 44
Dependent Claim
300 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with the catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating and (B) applying to the ceramic or ceramic-like coating on the electronic device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature of 150 to 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coating on the electronic device a silicon-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane or mixture thereof in the vapor phase, at a temperature between 200 and 600 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 45
Dependent Claim
10 words
An electronic device coated by the process of claim 36.
Claim 46
Dependent Claim
40 words
A process as claimed in claim 36 wherein the coating technique used to deposit the preceramic silicon nitrogen-containing polymer solution onto the electronic device is selected from the group consisting of spray coating, dip coating, flow coating and spin coating.
Claim 47
Dependent Claim
297 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 48
Dependent Claim
297 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon nitrogen-containing coating by means of decomposing in a reaction chamber a silane, halosilane, halodisilane, halopolysilane or mixture thereof, and ammonia, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 49
Dependent Claim
10 words
An electronic device coated by the process of claim 39.
Claim 50
Dependent Claim
311 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber an alkylsilane, silane, halosilane, halodisilane, halopolysilane or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 51
Dependent Claim
311 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon-containing coating by means of decomposing in a reaction chamber an alkylsilane, silane, halosilane, halodisilane, halopolysilane or mixture thereof, and an alkane of one to six carbon atoms or an alkylsilane, in the vapor phase, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 52
Dependent Claim
10 words
An electronic device coated by the process of claim 41.
Claim 53
Dependent Claim
286 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 54
Dependent Claim
286 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 55
Dependent Claim
10 words
An electronic device coated by the process of claim 43.
Claim 56
Dependent Claim
288 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 57
Dependent Claim
288 words
A process for forming on a substrate a multilayer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device at temperatures of 150 to 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coated electronic device, heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a ceramic or ceramic-like silicon nitrogen-containing coating, and (C) applying to the ceramic or ceramic-like coated device a silicon carbon nitrogen-containing coating by means of plasma enhanced chemical vapor deposition of hexamethyldisilazane, at a temperature between 150 and 1000 degrees Centigrade, in the presence of the ceramic or ceramic-like coated device, whereby an electronic device containing a multilayer, ceramic or ceramic-like coating thereon is obtained.
Claim 58
Dependent Claim
10 words
An electronic device coated by the process of claim 45.
Claim 59
Dependent Claim
246 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coating of the electronic device, and heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a passivating silicon nitrogen-containing coating, thereby producing a dual layer, ceramic or ceramic-like coating on the electronic device.
Claim 60
Dependent Claim
246 words
A process for forming on a substrate a dual layer, ceramic or ceramic-like coating which process comprises: (A) coating an electronic device with a coating by means of diluting a hydrogen silsesquioxane resin preceramic material with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, coating an electronic device with said catalyzed diluted preceramic hydrogen silsesquioxane resin solution, drying the catalyzed diluted preceramic hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a preceramic coating on the electronic device, ceramifying the catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated device to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating, and (B) applying to the ceramic or ceramic-like coated device a passivating coating comprising a silicon nitrogen-containing material produced by means of diluting in a solvent a preceramic silicon nitrogen-containing polymer, coating the ceramic or ceramic-like coated device with the diluted preceramic silicon nitrogen-containing polymer solution, drying the diluted preceramic silicon nitrogen-containing polymer solution so as to evaporate the solvent and thereby deposit a preceramic silicon nitrogen-containing coating on the ceramic or ceramic-like coating of the electronic device, and heating the coated device to a temperature between 150 and 1000 degrees Centigrade in an inert or ammonia-containing atmosphere to produce a passivating silicon nitrogen-containing coating, thereby producing a dual layer, ceramic or ceramic-like coating on the electronic device.
Claim 61
Independent Claim
116 words
A method of coating a substrate with a ceramic or ceramic-like silicon nitrogen-containing material, wherein said method comprises the steps of: (1) diluting with a solvent a silicon and nitrogen-containing preceramic polymer produced by reacting a cyclic silazane or a mixture of cyclic silazanes with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes; (2) coating a substrate with the diluted preceramic polymer solvent solution; (3) drying the diluted preceramic polymer solvent solution in the absence of air so as to evaporate the solvent and thereby deposit a preceramic polymer coating on the substrate; and (4) heating the coated substrate in the absence of air to produce a ceramic or ceramic-like coated substrate,
Claim 62
Independent Claim
116 words
A method of coating a substrate with a ceramic or ceramic-like silicon nitrogen-containing material, wherein said method comprises the steps of: (1) diluting with a solvent a silicon and nitrogen-containing preceramic polymer produced by reacting a cyclic silazane or a mixture of cyclic silazanes with a silicon-containing material selected from the group consisting of halodisilanes and halosilanes; (2) coating a substrate with the diluted preceramic polymer solvent solution; (3) drying the diluted preceramic polymer solvent solution in the absence of air so as to evaporate the solvent and thereby deposit a preceramic polymer coating on the substrate; and (4) heating the coated substrate in the absence of air to produce a ceramic or ceramic-like coated substrate,
Claim 63
Dependent Claim
129 words
A process for forming on a substrate a monolayer, ceramic or ceramic-like coating which process comprises: (A) coating a substrate with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to the substrate; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the substrate; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated substrate to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating.
Claim 64
Dependent Claim
129 words
A process for forming on a substrate a monolayer, ceramic or ceramic-like coating which process comprises: (A) coating a substrate with a planarizing coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the diluted hydrogen silsesquioxane resin solution with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, and applying the catalyzed diluted hydrogen silsesquioxane resin solution to the substrate; (B) drying the catalyzed diluted hydrogen silsesquioxane resin solution so as to evaporate the solvent and thereby deposit a catalyzed hydrogen silsesquioxane resin preceramic coating on the substrate; (C) ceramifying the catalyzed hydrogen silsesquioxane resin preceramic coating to silicon dioxide by heating the coated substrate to a temperature between 150 and 1000 degrees Centigrade to produce a ceramic or ceramic-like coating.
Claim 65
Dependent Claim
9 words
A substrate coated by the method of claim 49.
Claim 66
Dependent Claim
117 words
A substrate coated by a process comprising: (A) coating a substrate with a coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the solution of hydrogen silsesquioxane resin with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, applying the solution of catalyzed hydrogen silsesquioxane resin to the substrate; (B) drying the coating of the solution of catalyzed hydrogen silsesquioxane resin so as to evaporate the solvent and thereby deposit a preceramic layer of catalyzed hydrogen silsesquioxane resin on the substrate; and (C) ceramifying the preceramic layer of catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated substrate to a temperature between 150° C, and 1000° C.
Claim 67
Dependent Claim
117 words
A substrate coated by a process comprising: (A) coating a substrate with a coating by means of diluting hydrogen silsesquioxane resin with a solvent, catalyzing the solution of hydrogen silsesquioxane resin with a metal catalyst selected from the group consisting of platinum catalysts and rhodium catalysts, applying the solution of catalyzed hydrogen silsesquioxane resin to the substrate; (B) drying the coating of the solution of catalyzed hydrogen silsesquioxane resin so as to evaporate the solvent and thereby deposit a preceramic layer of catalyzed hydrogen silsesquioxane resin on the substrate; and (C) ceramifying the preceramic layer of catalyzed hydrogen silsesquioxane resin to silicon dioxide by heating the coated substrate to a temperature between 150° C, and 1000° C.
Claim 68
Dependent Claim
28 words
A substrate as defined in claim 51 wherein the preceramic layer of catalyzed hydrogen silsesquioxane resin on the substrate is ceramified by heating in an atmosphere of air.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |