Hydrosilazane polymers from [R3 Si]2 NH and HSiCl3

Claim 2

A process of preparing a R 3 SiNH-containing hydrosilazane polymer, which process consists of contacting and reacting, in an inert, essentially anhydrous atmosphere, trichlorosilane with a disilazane at a temperature in the range of 25° to 300° C. while distilling by-produced volatile products, wherein said disilazane has the general formula (R.sub.3 Si).sub.2 NH where R is selected from the group consisting of vinyl, hydrogen, phenyl, and alkyl radicals containing 1 to 3 carbon atoms.

Claim 3

A process as defined in claim 1 wherein said trichlorosilane is purified prior to contacting and reacting with said disilazane at a temperature in the range of 125° to 275° C.

Claim 4

A process as defined in claim 1 wherein said trichlorosilane and said disilazane are contacted in such a manner that the initial reaction temperature resulting from the initial exotherm is less than 50° C.

Claim 5

A process as defined in claim 2 wherein said trichlorosilane and said disilazane are contacted in such a manner that the initial reaction temperature resulting from the initial exotherm is less than 50° C.

Claim 6

A process as defined in claim 3 wherein the initial reaction temperature resulting from the initial exotherm is less than 35° C.

Claim 7

A process as defined in claim 4 wherein the initial reaction temperature resulting from the initial exotherm is less than 35° C.

Claim 8

A process as defined in claim 1 wherein (R 3 Si) 2 NH is [(CH 3 ) 3 Si] 2 NH.

Claim 9

A process as defined in claim 1 wherein (R 3 Si) 2 NH is [(CH 3 ) 2 CH 2 ═(HSi] 2 NH.

Claim 10

A process as defined in claim 1 wherein (R 3 Si) 2 NH is [(CH 3 (C 6 H 5 ) 2 Si] 2 NH.

Claim 11

A process as defined in claim 1 wherein (R 3 Si) 2 NH is [C 6 H 5 (CH 3 ) 2 Si] 2 NH.

Claim 12

A process as defined in claim 1 wherein (R 3 Si) 2 NH is [H(CH 3 ) 2 Si] 2 NH.

Claim 13

A process as defined in claim 4 wherein (R 3 Si) 2 NH is [(CH 3 ) 3 Si] 2 NH.

Claim 14

A process as defined in claim 4 wherein (R 3 Si) 2 NH is [(CH 3 ) 2 CH 2 ═CHSi] 2 NH.

Claim 15

A process as defined in claim 4 wherein (R 3 Si) 2 NH is [CH 3 (C 6 H 5 ) 2 Si] 2 NH.

Claim 16

A process as defined in claim 4 wherein (R 3 Si) 2 NH is [C 6 H 5 (CH 3 ) 2 Si] 2 NH.

Claim 17

A process as defined in claim 4 wherein (R 3 Si) 2 NH is [H(CH 3 ) 2 Si] 2 NH.

Claim 18

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 1.

Claim 19

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 2.

Claim 20

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 3.

Claim 21

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 4.

Claim 22

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 5.

Claim 23

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 6.

Claim 24

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 7.

Claim 25

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 8.

Claim 26

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 9.

Claim 27

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 10.

Claim 28

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 11.

Claim 29

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 12.

Claim 30

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 13.

Claim 31

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 14.

Claim 32

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 15.

Claim 33

A R 3 SiNH-containing hydrosilazane polymer as prepared by the process of claim 16.

Claim 34

A process of preparing a R 3 SiNH-containing hydrosilazane polymer, which process consists of contacting and reacting, in an inert, essentially anhydrous atmosphere, purified trichlorosilane with a disilazane at a temperature in the range of 125°-275° C. while distilling by-produced volatile products, wherein said purified trichlorosilane and disilazane are contacted in such a manner that the initial reaction temperature resulting from the initial exotherm is less than 50° C., wherein said purified trichlorosilane and disilazane are reacted by raising the temperature to 125°-275° C. at a rate of less than about 1° C./minute, and wherein said disilazane has the general formula (R.sub.3 Si).sub.2 NH where R is selected from the group consisting of vinyl, hydrogen, phenyl, and alkyl radicals containing 1 to 3 carbon atoms.

Claim 35

A process of preparing a R 3 SiNH-containing hydrosilazane polymer, which process consists of contacting and reacting, in an inert, essentially anhydrous atmosphere, purified trichlorosilane with a disilazane at a temperature in the range of 125°-275° C. while distilling by-produced volatile products, wherein said purified trichlorosilane and disilazane are contacted in such a manner that the initial reaction temperature resulting from the initial exotherm is less than 50° C., wherein said purified trichlorosilane and disilazane are reacted by raising the temperature to 125°-275° C. at a rate of less than about 1° C./minute, and wherein said disilazane has the general formula (R.sub.3 Si).sub.2 NH where R is selected from the group consisting of vinyl, hydrogen, phenyl, and alkyl radicals containing 1 to 3 carbon atoms.

Claim 36

A process as defined in claim 33 wherein said purified trichlorosilane and disilazane are contacted in such a manner that the initial reaction temperature resulting from the initial exotherm is less than 35° C. and wherein said purified trichlorosilane and disilazane are reacted by raising the temperature to 125°-275° C. at a rate of about 0.5° C./minute or less.

Claim 37

A R 3 SiNH-containing hydrosilazane polymer as prepared by the method of claim 33.

Claim 38

A R 3 SiNH-containing hydrosilazane polymer as prepared by the method of claim 34.