Patent US1496388A successfully refreshed from Google Patents.
Patent US4821278A successfully refreshed from Google Patents.
US4821278A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Inverted channel substrate planar semiconductor laser
Assignee: Northrop Grumman Space and Mission Systems Corp
•
Filing: 1987-04-02
•
Granted: 1989-04-11
•
Expires: 2007-04-02
Abstract
Abstract A semiconductor laser structure having the same advantages as a channeled substrate planar laser, but without the difficulties of fabrication associated with this structure. The structure includes a substrate, a planar first cladding layer, a planar active layer, and a second cladding layer in which a mesa region is formed. A blocking layer is formed over the second cladding layer and electrical contact is made through the blocking layer in the region of the mesa. The blocking layer functions to confine current flow in the mesa region and to provide index-guiding of light in the mesa region. Because of its simple geometry, the structure can be conveniently formed using a desirable fabrication process, such as metalorganic chemical vapor deposition (MOCVD). In one disclosed embodiment of the invention, the mesa is broadened to include at least one intermediate ledge on each side of a central pedestal. This reduces the abruptness of the change in effective index of refraction encountered by the laser light, and reduces astigmatism in the resultant beam.
Inventors
- 👤 Jane J. Yang
- 👤 Chi-Shain Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 07:04
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
149 words
An inverted channel substrate planar semiconductor laser, comprising: a planar substrate of semiconductor material of a selected conductivity type; a planar first cladding layer of semiconductor material of the same conductivity type formed over the substrate; a planar active layer of undoped semiconductor material formed over the first cladding layer; a second cladding layer of semiconductor material of the opposite conductivity type formed over the active layer and having a mesa formed on it; a semiconductor blocking layer formed over the second cladding layer and having a conductivity type the same as the substrate; and a conductive contact region extending through the blocking layer to contact the mesa formed on the second cladding layer; whereby the blocking layer laterally surrounds the mesa of the second cladding layer and functions both to confine the current to the region of the mesa and to laterally confine lasing to the same region.
Claim 2
Dependent Claim
149 words
An inverted channel substrate planar semiconductor laser, comprising: a planar substrate of semiconductor material of a selected conductivity type; a planar first cladding layer of semiconductor material of the same conductivity type formed over the substrate; a planar active layer of undoped semiconductor material formed over the first cladding layer; a second cladding layer of semiconductor material of the opposite conductivity type formed over the active layer and having a mesa formed on it; a semiconductor blocking layer formed over the second cladding layer and having a conductivity type the same as the substrate; and a conductive contact region extending through the blocking layer to contact the mesa formed on the second cladding layer; whereby the blocking layer laterally surrounds the mesa of the second cladding layer and functions both to confine the current to the region of the mesa and to laterally confine lasing to the same region.
Claim 3
Dependent Claim
38 words
An inverted channel substrate planar semiconductor laser as defined in claim 1, wherein: the substrate, the first cladding layer, and the blocking layer are of n type material; and the second cladding layer is of p type material.
Claim 4
Dependent Claim
57 words
An inverted channel substrate planar semiconductor laser as defined in claim 2, wherein: the substrate is of silicon-doped gallium arsenide; the first cladding layer is of selenium-doped gallium aluminum arsenide; the active layer is of undoped gallium arsenide; the second cladding layer is of zinc-doped gallium aluminum arsenide; and the blocking layer is of selenium-doped gallium arsenide.
Claim 5
Dependent Claim
32 words
An inverted channel substrate planar semiconductor laser as defined in claim 3, wherein: the conductive contact region is a zinc diffusion region extending through the blocking layer to the second cladding layer.
Claim 6
Dependent Claim
57 words
An inverted channel substrate planar semiconductor laser as defined in claim 1, wherein: the mesa on the second cladding layer includes a central pedestal and a transition region on each side of the pedestal in which the thickness of the layer is tapered from the height of the pedestal to the height of a surrounding planar area.
Claim 7
Dependent Claim
31 words
An inverted channel substrate planar semiconductor laser as defined in claim 5, wherein: each transition region adjacent to the central pedestal of the mesa region includes at least one intermediate ledge.
Claim 8
Dependent Claim
35 words
An inverted channel substrate planar semiconductor laser as defined in claim 5, wherein: each transition region adjacent to the central pedestal of the mesa region is of approximately the same width as the central pedestal.
Claim 9
Dependent Claim
38 words
An inverted channel substrate planar semiconductor laser as defined in claim 5, wherein: the substrate, the first cladding layer, and the blocking layer are of n type material; and the second cladding layer is of p type material.
Claim 10
Dependent Claim
57 words
An inverted channel substrate planar semiconductor laser as defined in claim 8, wherein: the substrate is of silicon-doped gallium arsenide; the first cladding layer is of selenium-doped gallium aluminum arsenide; the active layer is of undoped gallium arsenide; the second cladding layer is of zinc-doped gallium aluminum arsenide; and the blocking layer is of selenium-doped gallium arsenide.
Claim 11
Dependent Claim
32 words
An inverted channel substrate planar semiconductor laser as defined in claim 9, wherein: the conductive contact region is a zinc diffusion region extending through the blocking layer to the second cladding layer.
Claim 12
Dependent Claim
168 words
An inverted channel substrate planar semiconductor laser, comprising: a planar substrate of n type gallium arsenide; a planar first cladding layer of n type gallium aluminum arsenide formed over the substrate; a planar active layer of undoped gallium arsenide formed over the first cladding layer; a second cladding layer of semiconductor material of p type gallium aluminum arsenide formed over the active layer; a capping layer of p type gallium arsenide formed over the second cladding layer; a mesa region formed from the second cladding layer and the capping layer by etching; a semiconductor blocking layer of n type gallium arsenide formed over the remainder of the second cladding layer and the capping layer; and a conductive contact region extending through the blocking layer to contact the second cladding layer in the mesa region; whereby the blocking layer laterally surrounds the mesa region of the second cladding layer and functions both to confine the current to the mesa region and to laterally confine lasing to the same region.
Claim 13
Dependent Claim
168 words
An inverted channel substrate planar semiconductor laser, comprising: a planar substrate of n type gallium arsenide; a planar first cladding layer of n type gallium aluminum arsenide formed over the substrate; a planar active layer of undoped gallium arsenide formed over the first cladding layer; a second cladding layer of semiconductor material of p type gallium aluminum arsenide formed over the active layer; a capping layer of p type gallium arsenide formed over the second cladding layer; a mesa region formed from the second cladding layer and the capping layer by etching; a semiconductor blocking layer of n type gallium arsenide formed over the remainder of the second cladding layer and the capping layer; and a conductive contact region extending through the blocking layer to contact the second cladding layer in the mesa region; whereby the blocking layer laterally surrounds the mesa region of the second cladding layer and functions both to confine the current to the mesa region and to laterally confine lasing to the same region.
Claim 14
Dependent Claim
54 words
An inverted channel substrate planar semiconductor laser as defined in claim 11, wherein: the mesa region includes a central pedestal and a transition region on each side of the central pedestal in which the thickness of the layer is tapered from the height of the pedestal to the height of a surrounding planar area.
Claim 15
Dependent Claim
31 words
An inverted channel substrate planar semiconductor laser as defined in claim 12, wherein: each transition region adjacent to the central pedestal of the mesa region includes at least one intermediate ledge.
Claim 16
Dependent Claim
35 words
An inverted channel substrate planar semiconductor laser as defined in claim 12, wherein: each transition region adjacent to the central pedestal of the mesa region is of approximately the same width as the central pedestal.
References Cited (Backward Citations)
GB2129212A
Cited
US4647953A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-10 | 1992-10-10 | 1993-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-10 | 1996-10-10 | 1997-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-10 | 2000-10-10 | 2001-04-11 | $7700.00 | Window Closed / Lapsed |