Patent US4819039A successfully refreshed from Google Patents.
US4819039A
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Devices and device fabrication with borosilicate glass
Assignee: AMERICAN TELEPHONE AND TELEGRAPH Co AT&T LABORATORIES
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Filing: 1986-12-22
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Granted: 1989-04-04
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Expires: 2006-12-22
Abstract
Abstract Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.
Inventors
- 👤 Gou-Chung Chi
- 👤 Shobha Sing
- 👤 LeGrand G. Van Uitert
- 👤 George J. Zydzik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:55
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C03; C03C; C03C3/00; C03C3/04; C03C3/062; C03C3/064; C03C3/076; C03C3/089; C03C3/091; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6928; H10P14/6929; H10P14/6936
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
201 words
A process for fabricating a semiconductor device comprising III-V semiconductor body and having low dark current characteristics, which comprises the steps of depositing a glass target material on at least a part of a surface of said semiconductor body by a particle beam procedure to form a glass material region contacting the said at least a part of the surface, in which the glass material is a reconstituted borosilicate glass comprising at least one weight percent B 2 O 3 and at least 90 weight percent SiO 2 , ion-implanting at least one suitable dopant into at least one preselected region of the said III-V semiconductor surface, said ionimplanting being conducted before or after the glass material deposition step, subjecting the said body including the said glass region to a thermal anneal, and completing the fabrication of the device, wherein the glass target material is prepared at a temperature less than 1500° C. by a procedure comprising the steps of: a. making a sodium borosilicate glass comprising sodium borosilicate; b. effecting phase separation of the sodium borosilicate glass into a sodium-rich phase and a silica-rich phase; c. separating the sodium-rich phase from the silica-rich phase; and d. consolidating the silica-rich phase.
Claim 2
Dependent Claim
201 words
A process for fabricating a semiconductor device comprising III-V semiconductor body and having low dark current characteristics, which comprises the steps of depositing a glass target material on at least a part of a surface of said semiconductor body by a particle beam procedure to form a glass material region contacting the said at least a part of the surface, in which the glass material is a reconstituted borosilicate glass comprising at least one weight percent B 2 O 3 and at least 90 weight percent SiO 2 , ion-implanting at least one suitable dopant into at least one preselected region of the said III-V semiconductor surface, said ionimplanting being conducted before or after the glass material deposition step, subjecting the said body including the said glass region to a thermal anneal, and completing the fabrication of the device, wherein the glass target material is prepared at a temperature less than 1500° C. by a procedure comprising the steps of: a. making a sodium borosilicate glass comprising sodium borosilicate; b. effecting phase separation of the sodium borosilicate glass into a sodium-rich phase and a silica-rich phase; c. separating the sodium-rich phase from the silica-rich phase; and d. consolidating the silica-rich phase.
Claim 3
Dependent Claim
36 words
The method according to claim 1 in which a layer of the reconstituted glass material is deposited prior to said thermal anneal on that surface of said semiconductor body which is opposite to said firstmentioned surface.
Claim 4
Dependent Claim
16 words
The process of claim 1 in which the said thermal anneal is a rapid thermal anneal.
Claim 5
Dependent Claim
31 words
The process of claim 3 in which the rapid thermal anneal is conducted at temperatures ranging from 800 to 850 degrees C for a period of from 5 to 15 seconds.
Claim 6
Dependent Claim
30 words
The process of claim 1 in which the thermal anneal is conducted at temperatures ranging from 700 to 750 degrees C for a period of from 5 to 15 minutes.
Claim 7
Dependent Claim
11 words
The process of claim 1 in which said dopant is beryllium.
Claim 8
Dependent Claim
58 words
The process of claim 1 in which a hole is made in the said glass region, another suitable dopant is implanted into the said surface through the hole, and the semiconductor body is subjected to the thermal anneal to simultaneously diffuse the ions implanted at both of said implantation steps into the respective regions of the semiconductor body.
Claim 9
Dependent Claim
20 words
The process of claim 7 in which said another dopant is selected from the group consisting of cadmium and zinc.
Claim 10
Dependent Claim
14 words
The process of claim 1 in which the particle beam procedure is e-beam deposition.
Claim 11
Dependent Claim
29 words
The process of claim 1 in which the III-V semiconductor compound is selected from the group consisting of InP and GaAs and compounds lattice matched to InP and GaAs.
Claim 12
Dependent Claim
24 words
The process of claim 1 in which the glass material region comprises at least 95 weight percent silica and 1-5 weight percent boron oxide.
Claim 13
Dependent Claim
38 words
The process of claim 11 in which the glass material region consists essentially of 96-97 weight percent silica, 0.1 to 0.9 weight percent Al 2 O 3 and 2.0 to 4.0 weight percent B 2 O 3 .
Claim 14
Dependent Claim
45 words
The process of claim 1 in which the sodium borosilicate glass comprising sodium borosilicate is made by heating a mixture comprising Na 2 O, B 2 O 3 and SiO 2 to a temperature between the fusion temperature of the mixture and 1500 degrees C.
Claim 15
Dependent Claim
23 words
The process of claim 13 in which the mixture is heated in step (a) to a temperature between 1100 and 1300 degrees C.
Claim 16
Dependent Claim
30 words
The process of claim 13 in which the mixture comprises in addition to Na 2 O, B 2 O 3 and SiO 2 , between 0.1 and 3.0 weight percent
Claim 17
Dependent Claim
40 words
The process of claim 13 in which the mixture consists essentially of 50-70 weight percent SiO 2 , 10-30 weight percent Na 2 O, 10-30 weight percent B 2 O 3 and 0.2-2.5 weight percent Al 2 O 3 .
Claim 18
Dependent Claim
24 words
The process of claim 1 in which phase separation is effected by heat treatment in the temperature range from 600 to 900 degrees C.
Claim 19
Dependent Claim
19 words
The process of claim 1 in which the sodium-rich phase is separated from the silica-rich phase by acid leaching.
Claim 20
Dependent Claim
15 words
The process of claim 18 in which acid leaching is carried out with aqueous HCl.
Claim 21
Dependent Claim
18 words
The process of claim 1 wherein said ion-implantation step is preferably accomplished after said glass material deposition step.
Claim 22
Dependent Claim
18 words
The process of claim 1 wherein said ion-implantation step is accomplished prior to said glass material deposition step.
Claim 23
Independent Claim
195 words
A device having low dark current characteristics made by the process comprising the steps of depositing a glass target material on at least a part of a surface of a III-V semiconductor body by a particle beam procedure to form a glass material region contacting the said at least a part of the surface, in which the glass material is a reconstituted borosilicate glass comprising at least one weight percent B 2 O 3 and at least 90 weight percent SiO 2 , ion-implanting at least one suitable dopant into at least one preselected region of the said III-V semiconductor surface, said ionimplanting being conducted before or after said glass material deposition step, subjecting the said semiconductor body including the implanted region to a thermal anneal, and completing the fabrication of the device, wherein the glass target material is prepared at a temperature less than 1500° C. by a procedure comprising the steps of: a. making a sodium borosilicate glass comprising sodium borosilicate; b effecting phase separation of the sodium borosilicate glass into a sodium-rich phase and a silica-rich phase; c. separating the sodium-rich phase from the silica-rich phase; and d. consolidating the silica-rich phase.
Claim 24
Independent Claim
195 words
A device having low dark current characteristics made by the process comprising the steps of depositing a glass target material on at least a part of a surface of a III-V semiconductor body by a particle beam procedure to form a glass material region contacting the said at least a part of the surface, in which the glass material is a reconstituted borosilicate glass comprising at least one weight percent B 2 O 3 and at least 90 weight percent SiO 2 , ion-implanting at least one suitable dopant into at least one preselected region of the said III-V semiconductor surface, said ionimplanting being conducted before or after said glass material deposition step, subjecting the said semiconductor body including the implanted region to a thermal anneal, and completing the fabrication of the device, wherein the glass target material is prepared at a temperature less than 1500° C. by a procedure comprising the steps of: a. making a sodium borosilicate glass comprising sodium borosilicate; b effecting phase separation of the sodium borosilicate glass into a sodium-rich phase and a silica-rich phase; c. separating the sodium-rich phase from the silica-rich phase; and d. consolidating the silica-rich phase.
Claim 25
Dependent Claim
36 words
The device of claim 22 in which a layer of said reconstituted borosilicate glass material is deposited prior to said thermal anneal on that surface of said semiconductor body which is opposite to said first-mentioned surface.
Claim 26
Dependent Claim
16 words
The process of claim 22 in which the said thermal anneal is a rapid thermal anneal.
Claim 27
Dependent Claim
31 words
The process of claim 24 in which the rapid thermal anneal is conducted at temperatures ranging from 800 to 850 degrees C for a period of from 5 to 15 seconds.
Claim 28
Dependent Claim
30 words
The process of claim 22 in which the thermal anneal is conducted at temperatures ranging from 700 to 750 degrees C for a period of from 5 to 15 minutes.
Claim 29
Dependent Claim
11 words
The process of claim 22 in which said dopant is beryllium.
Claim 30
Dependent Claim
58 words
The process of claim 22 in which a hole is made in the said glass region, another suitable dopant is implanted into the said surface through the hole, and the semiconductor body is subjected to the thermal anneal to simultaneously diffuse the ions implanted at both of said implantation steps into the respective regions of the semiconductor body.
Claim 31
Dependent Claim
20 words
The process of claim 28 in which said another dopant is selected from the group consisting of cadmium and zinc.
Claim 32
Dependent Claim
18 words
The process of claim 22 wherein said ion-implantation step is preferably accomplished after said glass material deposition step.
Claim 33
Dependent Claim
18 words
The process of claim 22 wherein said ion-implantation step is accomplished prior to said glass materail deposition step.
Claim 34
Dependent Claim
13 words
The device of claim 22 in which the device is an avalanche photodiode.
Claim 35
Dependent Claim
14 words
The device of claim 22 in which the device is a GaAs integrated circuit
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-03 | 1992-10-03 | 1993-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-03 | 1996-10-03 | 1997-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-03 | 2000-10-03 | 2001-04-04 | $7700.00 | Window Closed / Lapsed |