US4374391A
Expired / Lapsed
US
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Device fabrication procedure
Assignee: AT&T Inc
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Filing: 1980-09-24
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Granted: 1983-02-15
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Expires: 2000-09-24
Abstract
Abstract A fabrication technique is described for making various devices in which a type of glass is used as a surface protection layer. The glass layers are put down by particle bombardment (generally sputtering) of a borosilicate glass target. Devices with such surface layers are also described. Such glass layers are highly advantageous as encapsulating material, diffusion barrier layers, etc., particularly for optical type devices and certain semiconductor devices. Particularly important is the preparation procedure for the glass target used in the bombardment process. The glass layers are moisture stable, act as excellent barriers against diffusion, and are usable up to quite high temperatures without cracking or peeling. The glass layers also provide long-term protection against atmosphere components including water vapor, oxygen, atmosphere pollution contaminants, etc.
Inventors
- 👤 Irfan Camlibel
- 👤 Shobha Singh
- 👤 LeGrand G. Van Uitert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C; C03; C03C; C03C3/00; C03C3/04; C03C3/062; C03C3/064; C03C3/076; C03C3/089; C23; C23C; C23C14/00; C23C14/06; C23C14/10; H10F; H10F77/00; H10F77/30; H10F77/306; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10W; H10W74/00; H10W74/01
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
95 words
A process for fabricating a device including the step of sputtering a borosilicate glass target material on at least part of a surface to form a borosilicate glass layer, characterized in that the borosilicate glass target material used in the sputtering procedure is prepared by a procedure comprising the steps of: a. mixing together a substance A consisting essentially of SiO 2 with a substance B consisting essentially of B 2 O 3 ; and b. heat treating the resulting mixture at a temperature between 1500 and 2100 degrees C. for at least six hours.
Claim 2
Dependent Claim
95 words
A process for fabricating a device including the step of sputtering a borosilicate glass target material on at least part of a surface to form a borosilicate glass layer, characterized in that the borosilicate glass target material used in the sputtering procedure is prepared by a procedure comprising the steps of: a. mixing together a substance A consisting essentially of SiO 2 with a substance B consisting essentially of B 2 O 3 ; and b. heat treating the resulting mixture at a temperature between 1500 and 2100 degrees C. for at least six hours.
Claim 3
Dependent Claim
17 words
The process of claim 1 in which the mixing is done by ball milling for 5-15 hours.
Claim 4
Dependent Claim
42 words
The process of claim 1 in which at least 90 weight percent of the SiO 2 has particle size less than 10 microns and at least 90 weight percent of the B 2 O 3 has particle size less than 10 microns.
Claim 5
Dependent Claim
24 words
The process of claim 1 in which the heat treatment is carried out between 1600 and 1900 degrees C. for 6 to 12 hours.
Claim 6
Dependent Claim
17 words
The process of claim 4 in which the heat treatment is carried out in an inert atmosphere.
Claim 7
Dependent Claim
16 words
The process of claim 5 in which the inert atmosphere consists essentially of nitrogen and argon.
Claim 8
Dependent Claim
38 words
The process of claim 1 in which a sintering procedure is carried out after mixing but before heat treatment, said sintering procedure comprising heating the mixture to between 1000 and 1300 degrees C. for one to 10 hours.
Claim 9
Dependent Claim
21 words
The process of claim 7 in which the sintering procedure is carried out at 1150 ±25 degrees C. for six hours.
Claim 10
Dependent Claim
19 words
The process of claim 1 in which the sputtering procedure is carried out with argon as the carrier gas.
Claim 11
Dependent Claim
19 words
The process of claim 9 in which the sputtering gas consists essentially of argon with trace amounts of oxygen.
Claim 12
Dependent Claim
28 words
The process of claim 1 in which the borosilicate glass target material consists essentially of up to 60 mole percent B 2 O 3 remainder SiO 2 .
Claim 13
Dependent Claim
26 words
The process of claim 11 in which the borosilicate glass target material consists essentially of 5-45 mole percent B 2 O 3 remainder SiO 2 .
Claim 14
Dependent Claim
29 words
The process of claim 1 in which the device is a semiconductor optical device and the borosilicate glass is sputtered on a surface consisting essentially of a III-V semiconductor.
Claim 15
Dependent Claim
33 words
The process of claim 13 in which the semiconductor compound is selected from the group consisting of gallium phosphide, silicon, indium phosphide, indium gallium arsenide, indium gallium arsenide phosphide, indium antimonide and germanium.
Claim 16
Dependent Claim
23 words
The process of claim 14 in which the semiconductor compound is selected from the group consisting of indium phosphide and indium gallium arsenide.
Claim 17
Dependent Claim
25 words
The process of claim 1 in which the process for fabricating a device includes a diffusion procedure carried out between 600 and 900 degrees C.
Claim 18
Dependent Claim
17 words
The process of claim 1 in which the borosilicate glass layer is used to encapsulate the device.
Claim 19
Dependent Claim
34 words
The process of claim 1 in which the resulting borosilicate glass target material is exposed to an annealing operation in the temperature range from 600 to 1400 degrees C. for one to 10 hours.
Claim 20
Independent Claim
129 words
A device comprising a surface at least partially coated with a borosilicate glass layer, said layer fabricated by sputtering a borosilicate glass target material characterized in that the borosilicate glass target material used in the sputtering procedure is prepared by a procedure comprising the steps of a. mixing together a substance A consisting essentially of SiO 2 in which at least 90 weight percent of the SiO 2 has a particle size less than 10 microns with a substance B consisting essentially of B 2 O 3 in which at least 90 weight percent of the B 2 O 3 has a particle size less than 10 microns and b. heat treating the resulting mixture at a temperature between 1500 and 2100 degrees C. for at least 6 hours.
Claim 21
Independent Claim
129 words
A device comprising a surface at least partially coated with a borosilicate glass layer, said layer fabricated by sputtering a borosilicate glass target material characterized in that the borosilicate glass target material used in the sputtering procedure is prepared by a procedure comprising the steps of a. mixing together a substance A consisting essentially of SiO 2 in which at least 90 weight percent of the SiO 2 has a particle size less than 10 microns with a substance B consisting essentially of B 2 O 3 in which at least 90 weight percent of the B 2 O 3 has a particle size less than 10 microns and b. heat treating the resulting mixture at a temperature between 1500 and 2100 degrees C. for at least 6 hours.
Claim 22
Dependent Claim
19 words
The device of claim 19 in which the mixing is done by ball milling for 5 to 15 hours.
Claim 23
Dependent Claim
15 words
The device of claim 19 in which the particle size is less than 1 micron.
Claim 24
Dependent Claim
24 words
The device of claim 19 in which the heat treatment is carried out between 1600 and 1900 degrees C. for 6 to 12 hours.
Claim 25
Dependent Claim
17 words
The device of claim 22 in which the heat treatment is carried out in an inert atmosphere.
Claim 26
Dependent Claim
16 words
The device of claim 23 in which the inert atmosphere consists essentially of nitrogen and argon.
Claim 27
Dependent Claim
38 words
The device of claim 19 in which a sintering procedure is carried out after mixing but before heat treatment, said sintering procedure comprising heating the mixture to between 1000 and 1300 degrees C. for 1 to 10 hours.
Claim 28
Dependent Claim
22 words
The device of claim 25 in which the sintering procedure is carried out at 1150 ±25 degrees C. for approximately 6 hours.
Claim 29
Dependent Claim
19 words
The device of claim 26 in which the sputtering procedure is carried out with argon as the carrier gas.
Claim 30
Dependent Claim
19 words
The device of claim 27 in which the sputtering gas consists essentially of argon with trace amounts of oxygen.
Claim 31
Dependent Claim
27 words
The device of claim 19 in which the borosilicate glass layer consists essentially of up to 60 mole percent B 2 O 3 remainder SiO 2 .
Claim 32
Dependent Claim
27 words
The device of claim 29 in which the borosilicate glass layer consists essentially of 5 to 45 mole percent B 2 O 3 remainder SiO 2 .
Claim 33
Dependent Claim
23 words
The device of claim 19 in which the borosilicate glass layer at least partially covers a surface consisting essentially of a III-V semiconductor.
Claim 34
Dependent Claim
33 words
The device of claim 19 in which the III-V semiconductor is selected from the group consisting of gallium phosphide, silicon, indium phosphide, indium gallium arsenide, indium gallium arsenide phosphide, indium antimonide and germanium.
Claim 35
Dependent Claim
14 words
The device of claim 19 in which the device is an optical semiconductor device.
Claim 36
Dependent Claim
13 words
The device of claim 19 in which the device is an optical laser.
Claim 37
Dependent Claim
13 words
The device of claim 19 in which the device is a light-emitting diode.
Claim 38
Dependent Claim
13 words
The device of claim 19 in which the device is an optical detector.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-14 | 1986-08-16 | 1987-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-14 | 1990-08-16 | 1991-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-14 | 1994-08-16 | 1995-02-15 | $7700.00 | Window Closed / Lapsed |