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US4816879A
Expired / Lapsed
US
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Schottky-type rectifier having controllable barrier height
Assignee: Philips North America LLC
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Filing: 1982-12-08
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Granted: 1989-03-28
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Expires: 2002-12-08
Abstract
Abstract A Schottky-type diode has a conductor-to-semiconductor barrier height φ B that is controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). The silicide layer is constituted with two or more metals such as platinum and nickel.
Inventors
- 👤 Russell C. Ellwanger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 02:51
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; H10D64/01; H10D64/012; H10D64/0121; H10D8/00; H10D8/60
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
208 words
A rectifier in which a semiconductor body has an N-type semiconductive region, a metal silicide layer adjoins the N-type region to define a rectifying junction at an interface therebetween, and a conductive non-silicide layer ohmically adjoins the silicide layer across from the junction, characterized in that : the silicide layer is sufficiently thin that the actual conductor-to-semiconductor barrier height φ B at the junction does not substantially equal the intrinsic conductor-to-semiconductor barrier height φ B0 at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the silicide layer along the junction and has the same average composition as the silicide layer; the absolute value of (φ B0 -φB)/(φ Bo -φ BN ) is not less than 0.15 where φ BN is the conductor-to-semiconductor barrier height at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the non-silicide layer; and the silicide layer comprises (1) a first layer adjoining the N-type region and (2) a second layer overlying the first layer across from the junction and having a different average composition than the first layer.
Claim 2
Dependent Claim
208 words
A rectifier in which a semiconductor body has an N-type semiconductive region, a metal silicide layer adjoins the N-type region to define a rectifying junction at an interface therebetween, and a conductive non-silicide layer ohmically adjoins the silicide layer across from the junction, characterized in that : the silicide layer is sufficiently thin that the actual conductor-to-semiconductor barrier height φ B at the junction does not substantially equal the intrinsic conductor-to-semiconductor barrier height φ B0 at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the silicide layer along the junction and has the same average composition as the silicide layer; the absolute value of (φ B0 -φB)/(φ Bo -φ BN ) is not less than 0.15 where φ BN is the conductor-to-semiconductor barrier height at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the non-silicide layer; and the silicide layer comprises (1) a first layer adjoining the N-type region and (2) a second layer overlying the first layer across from the junction and having a different average composition than the first layer.
Claim 3
Dependent Claim
55 words
A rectifier as in claim 1 characterized in that the average composition of the first layer is substantially Ni y Pt 1-y Si where Y is variable between 0 and 1 and that the average composition of the second layer is substantially Ni z Pt 1-Z Si where Z is variable between 0 and Y.
Claim 4
Dependent Claim
143 words
A rectifier in which a semiconductor body as an N-type semiconductive region, a metal silicide layer constituted with at least two selected metals adjoins the N-type region to define a rectifying junction at an interface therebetween, and a conductive non-silicide layer ohmically adjoins the silicide layer across from the junction, characterized in that the silicide layer is the remainder of an original metal silicide layer of greater thickness than the silicide layer which is sufficiently thin that the actual conductor-to-semiconductor barrier height φ B at the junction does not substantially equal the intrinsic conductor-to-semiconductor barrier height φ B0 at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the original silicide layer along the junction and has the same average composition as the original silicide layer.
Claim 5
Dependent Claim
143 words
A rectifier in which a semiconductor body as an N-type semiconductive region, a metal silicide layer constituted with at least two selected metals adjoins the N-type region to define a rectifying junction at an interface therebetween, and a conductive non-silicide layer ohmically adjoins the silicide layer across from the junction, characterized in that the silicide layer is the remainder of an original metal silicide layer of greater thickness than the silicide layer which is sufficiently thin that the actual conductor-to-semiconductor barrier height φ B at the junction does not substantially equal the intrinsic conductor-to-semiconductor barrier height φ B0 at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the original silicide layer along the junction and has the same average composition as the original silicide layer.
Claim 6
Dependent Claim
65 words
A rectifier as in claim 3 characterized in that the absolute value of (φ B0 -φ B )/(φ B0 -φ BN ) is not less than 0.15 where φ BN is the conductor-to-semiconduct barrier height at an interface between material which is the same as that of the N-type region along the junction and material which is the same as that of the non-silicide layer.
Claim 7
Dependent Claim
27 words
A rectifier as in claim 4 characterized in that a self-induced electric field penetrates through the entire thickness of the silicide layer and into the non-silicide layer.
Claim 8
Dependent Claim
42 words
A rectifier as in claim 4 characterized in that the silicide layer comprises a first layer adjoining the N-type region and a second layer overlying the first layer across from the junction and having a different average composition than the first layer.
Claim 9
Dependent Claim
55 words
A rectifier as in claim 6 characterized in that the average composition of the first layer is substantially Ni Y Pt 1-Y Si where Y is variable between 0 and 1 and that the average composition of the second layer is substantially Ni Z Pt 1-Z Si where Z is variable between 0 and Y.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-27 | 1992-09-26 | 1993-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-27 | 1996-09-26 | 1997-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-27 | 2000-09-26 | 2001-03-28 | $7700.00 | Window Closed / Lapsed |