Bi-CMOS logic circuit

Claim 2

A complementary logic IC (Ingtegrated circuit) comprising: a first voltage supply source; a second voltage supply source having a lower potential said first voltage supply source; an output stage circuit, having a p-channel vertical FET (V-FET) and an n-channel V-FET, whose drains are connected to each other to form an output for outputting an output signal, said p-channel and n-channel V-FET's each having a source connected to said first and second voltage sources, respectively; an input stage circuit formed of a first MIS-FET (Metal Insulator Semiconductor type Field Effect Transistor) having one conductivity type channel and a second MIS-FET having an opposite conductivity type channel with respect to said first MIS-FET, said first and second MIS-FETs connected between the gate and drain of the p-channel and n-channel V-FETs, respectively, and wherein the gates of said first and second MIS-FETs are connected together to form an input for receiving the input signal; and pull-up and pull-down elements respectively provided between the gate and voltage supply source of said p-channel and n-channel V-FETs.

Claim 3

A complementary logic IC (Integrated Circuit) comprising: a first voltage supply source; a second voltage supply source having a lower potential than said first voltage supply source; an output stage circuit having a pnp type bipolar transistor and an npn type bipolar transistor whose collectors are connected to each other to form an output for outputting an output signal, said pnp type and npn type bipolar transistors each having an emitter connected to said first and second voltage supply sources, respectively; an input stage circuit having a first MIS-FET (Metal Insulator Semiconductor type Field Effect Transistor) having one conductivity type channel land a second MIS-FET having an opposite conductivity type channel with respect to aid first MIS-FET, said first and second MIS-FETs connected between the base and collector of the pnp type and npn type bipolar transistors, respectively, and wherein the gates of said first and second MIS-FETs are connected together to form an input for receiving the input signal; a pull-up means, provided between said base of said pnp type bipolar transistor and said first voltage supply source, for raising the voltage of said output signal higher than the voltage of said first voltage supply source minus a base-emitter forward voltage of the pnp type bipolar transistor when said output signal becomes a high level; and a pull-down means, provided between said base of said npn type bipolar transistor and said second voltage supply source, for lowering the voltage of said output signal lower than the voltage of said second voltage supply source plus a base-emitter forward voltage of the npn type bipolar transistor when said output signal becomes a low level which is lower than said high level.

Claim 4

A complementary logic IC (Integrated Circuit) comprising: a first voltage supply source; a second voltage supply source having a lower potential than said first voltage supply source; an output stage circuit having a pnp type bipolar transistor and an npn type bipolar transistor whose collectors are connected to each other to form an output for outputting an output signal, said pnp type and npn type bipolar transistors each having an emitter connected to said first and second voltage supply sources, respectively; an input stage circuit having a first MIS-FET (Metal Insulator Semiconductor type Field Effect Transistor) having one conductivity type channel land a second MIS-FET having an opposite conductivity type channel with respect to aid first MIS-FET, said first and second MIS-FETs connected between the base and collector of the pnp type and npn type bipolar transistors, respectively, and wherein the gates of said first and second MIS-FETs are connected together to form an input for receiving the input signal; a pull-up means, provided between said base of said pnp type bipolar transistor and said first voltage supply source, for raising the voltage of said output signal higher than the voltage of said first voltage supply source minus a base-emitter forward voltage of the pnp type bipolar transistor when said output signal becomes a high level; and a pull-down means, provided between said base of said npn type bipolar transistor and said second voltage supply source, for lowering the voltage of said output signal lower than the voltage of said second voltage supply source plus a base-emitter forward voltage of the npn type bipolar transistor when said output signal becomes a low level which is lower than said high level.

Claim 5

The complementary logic IC of claim 2 or 1, wherein said pull-up and pull-down elements are each composed of a resistor.

Claim 6

The complementary logic IC of claim 3, wherein each said resistor has a resistance value in the range form equivalent to the ON-resistance value in the range from equivalent to the ON-resistance of said MIS-FET to ten times the ON-resistance of said MIS-FET.

Claim 7

The complementary logic IC of claim 2 or 1, wherein: said pull-up and pull-down elements are each composed of a depletion type FET whose gate is connected to its source electrode.

Claim 8

The complementary logic IC of claim 2 or 1, wherein: said pull-up and pull-down elements are each composed of A FET whose gate is connected to its respective drain, and said FET having a lower threshold voltage than a bipolar transistor.

Claim 9

A complementary logic IC (Integrated Circuit) comprising: a first voltage supply source; a second voltage supply source having a lower potential than said first voltage supply source; an output stage circuit having a pnp type bipolar transistor and an npn type bipolar transistor whose collectors are connected to each other to form an output for outputting an output signal, said pnp type and npn type bipolar transistors each having an emitter connected to said first and second voltage supply sources, respectively; an input stage circuit having a first MIS-FET (Metal Insulator Semiconductor type Field Effect Transistor) having one conductivity type channel and a second MIS-FET having an opposite conductivity type channel with respect to said first MIS-FET, said first and second MIS-FETs connected between the base and collector of the pnp type and npn type bipolar transistors, respectively, and wherein the gates of said first and second MIS-FETs are connected together to form an input for receiving the input signal; an n-channel MIS-FET connected between the base of said pnp type bipolar transistor and the first voltage supply source and having a gate operatively connected to the collector of said pup type bipolar transistor; and a p-channel MIS-FET connected between the base of said npn type bipolar transistor and the second voltage supply source and having a gate operatively connected to the collector of said npn type bipolar transistor.

Claim 10

A complementary logic IC (Integrated Circuit) comprising: a first voltage supply source; a second voltage supply source having a lower potential than said first voltage supply source; an output stage circuit having a pnp type bipolar transistor and an npn type bipolar transistor whose collectors are connected to each other to form an output for outputting an output signal, said pnp type and npn type bipolar transistors each having an emitter connected to said first and second voltage supply sources, respectively; an input stage circuit having a first MIS-FET (Metal Insulator Semiconductor type Field Effect Transistor) having one conductivity type channel and a second MIS-FET having an opposite conductivity type channel with respect to said first MIS-FET, said first and second MIS-FETs connected between the base and collector of the pnp type and npn type bipolar transistors, respectively, and wherein the gates of said first and second MIS-FETs are connected together to form an input for receiving the input signal; an n-channel MIS-FET connected between the base of said pnp type bipolar transistor and the first voltage supply source and having a gate operatively connected to the collector of said pup type bipolar transistor; and a p-channel MIS-FET connected between the base of said npn type bipolar transistor and the second voltage supply source and having a gate operatively connected to the collector of said npn type bipolar transistor.