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US4814289A
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US
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Method for the manufacture of thin-film capacitors
Assignee: Individual
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Filing: 1987-12-21
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Granted: 1989-03-21
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Expires: 2007-12-21
Abstract
Abstract Thin-film capacitors are produced with laser chemical vapor deposition technology on a substrate, which is preferably the substrate of an integrated circuit, by forming alternating layers of electrodes and dielectric.
Inventors
- 👤 Dieter Baeuerle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:14
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/085; H01G4/30; H01G4/306; Y; Y10; Y10S; Y10S148/00; Y10S148/014; Y10S148/093
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
164 words
A method for the manufacture of thin-film capacitors on a semiconductor substrate of an integrated circuit where the capacitor is formed of superimposed alternating layers of electrode material and a dielectric, the method comprising: forming thin-film electrode layers from a vapor phase in accordance with a laser emission induced deposition method, said electrode layers being of a material selected from the group consisting of aluminum and silicon; forming thin-film layers of dielectric from a vapor phase in accordance with laser emission induced deposition methods, said dielectric layers being of a material selected from the group consisting of silicon dioxide and aluminum oxide, said dielectric layers being formed alternately with said electrode layers; and directing laser emission substantially perpendicular to said semiconductor substrate during said laser emission induced deposition to selectively deposit by focusing said laser on areas of said substrate for formation of said layers to monolithically integrate said capacitor in the existing circuit of said substrate while avoiding damage to the integrated circuit.
Claim 2
Independent Claim
164 words
A method for the manufacture of thin-film capacitors on a semiconductor substrate of an integrated circuit where the capacitor is formed of superimposed alternating layers of electrode material and a dielectric, the method comprising: forming thin-film electrode layers from a vapor phase in accordance with a laser emission induced deposition method, said electrode layers being of a material selected from the group consisting of aluminum and silicon; forming thin-film layers of dielectric from a vapor phase in accordance with laser emission induced deposition methods, said dielectric layers being of a material selected from the group consisting of silicon dioxide and aluminum oxide, said dielectric layers being formed alternately with said electrode layers; and directing laser emission substantially perpendicular to said semiconductor substrate during said laser emission induced deposition to selectively deposit by focusing said laser on areas of said substrate for formation of said layers to monolithically integrate said capacitor in the existing circuit of said substrate while avoiding damage to the integrated circuit.
Claim 3
Dependent Claim
32 words
A method as claimed in claim 1, further comprising: depositing a predetermined multiple of said electrode layers alternately with said dielectric layers to achieve a predetermined capacitance value for said thin-film capacitor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-20 | 1992-09-19 | 1993-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-20 | 1996-09-19 | 1997-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-20 | 2000-09-19 | 2001-03-21 | $7700.00 | Window Closed / Lapsed |