Semiconductor device

Claim 2

1 A semiconductor device comprising: a semiconductor body of single crystal, having a first protruding portion, the first protruding portion having an upper surface and sides; a first insulation film having a first opening, said first insulation film being located on said body such that said first opening exposes the upper surface of said first protruding portion; a first semiconductor region, of a second conductivity type opposite to a first conductivity type, forming a part of said first protruding portion; a second semiconductor region, of the first conductivity type, forming another part of said first protruding portion, the second semiconductor region being located on said first semiconductor region; a second insulation film formed on said second semiconductor region; at least one conductive layer formed in electrical connection with said first semiconductor region and extending from the electrical connection with the first semiconductor region to a location over said second insulation film on said second semiconductor region, the at least one conductive layer being located so as not to be in direct contact with the second semiconductor region; and first electrodes respectively provided in electrical connection with said at least one conductive layer, and a second electrode provided in electrical connection with the second semiconductor region, the first and second electrodes contacting the at least one conductive layer and the second semiconductor region, respectively, over the second semiconductor region.

Claim 3

A semiconductor device according to claim 1, wherein said conductive layer is made of polycrystalline silicon or metal silicide.

Claim 4

A semiconductor device according to claim 1, wherein said second semiconductor region is of said first conductivity type.

Claim 5

A semiconductor device according to claim 1, wherein said first electrode contacts the conductive layer over the first semiconductor region.

Claim 6

A semiconductor device according to claim 1, wherein said first semiconductor region and said second semiconductor region constitute respectively a base region and an emitter region of a bipolar transistor, and a collector region of the second conductivity type is formed in contact with a lower surface of said base region.

Claim 7

A semiconductor device according to claim 5, wherein said conductive layer is in contact with a side wall of said base region, and said second insulation film is formed on an upper surface of said emitter region.

Claim 8

A semiconductor device according to claim 5, wherein said first electrode and said second electrode respectively constitute a base electrode and an emitter electrode for said bipolar transistor.

Claim 9

A semiconductor device according to claim 6, wherein said conductive layer is made of polycrystalline silicon or metal silicide.

Claim 10

A semiconductor device according to claim 7, further comprising a polycrystalline silicon layer or metal silicide layer formed on said emitter, said emitter electrode being formed on said polycrystalline silicon layer or metal silicide layer.

Claim 11

A semiconductor device according to claim 1, wherein said second semiconductor region is directly on the first semiconductor region, the second semiconductor region has opposed sides extending at the periphery of the second semiconductor region, and said at least one conductive layer in electrical connection with the first semiconductor region extends past one of said opposed sides of the second semiconductor region and continues to a position on said second insulation film.

Claim 12

A semiconductor device according to claim 1, comprising two conductive layers formed in electrical connection with said first semiconductor region, said two conductive layers being in electrical connection with opposed ends of said first semiconductor region; and two first electrodes in electrical connection, respectively, with the two conductive layers, the two first electrodes contacting the respective conductive layers over the second semiconductor region.

Claim 13

A semiconductor device according to claim 11, wherein said second insulation film is in direct contact with said second semiconductor region.

Claim 14

A semiconductor device according to claim 5, wherein said second insulation film is in direct contact with said emitter region.

Claim 15

A semiconductor device according to claim 5, wherein said first electrodes contact said at least one conductive layer over the emitter region.

Claim 16

A semiconductor device comprising: a semiconductor body of single crystal, having a first protruding portion, the first protruding portion having an upper surface and sides; a first insulation film having a first opening, said first insulating film being located on said body such that said first opening exposes the upper surface of said first protruding portion; a first semiconductor region, of a second conductivity type opposite to a first conductivity type, forming a part of said first protruding portion, said first semiconductor region having upper and lower and lower surfaces; two second semiconductor regions of said first conductivity type, located respectively adjacent the opposed sides of said first semiconductor region, said two second semiconductor regions each having sides forming the sides of the first protruding portion; a second insulation film formed on said first semiconductor region; conductive layers formed respectively in electrical connection with said two second semiconductor regions, at the sides of said two semiconductor regions, and extending from said electrical connection to a location over said second insulation film on said first semiconductor region, so as not to be indirect contact with the first semiconductor region; and first electrodes respectively provided in electrical connection with said conductive layers, and a second electrode in electrical connection with the first semiconductor region, the electrical connection of the first electrodes with the respective conductive layers, and the electrical connection between the second electrode and the first semiconductor region, each being positioned over the first semiconductor region.

Claim 17

A semiconductor device comprising: a semiconductor body of single crystal, having a first protruding portion, the first protruding portion having an upper surface and sides; a first insulation film having a first opening, said first insulating film being located on said body such that said first opening exposes the upper surface of said first protruding portion; a first semiconductor region, of a second conductivity type opposite to a first conductivity type, forming a part of said first protruding portion, said first semiconductor region having upper and lower and lower surfaces; two second semiconductor regions of said first conductivity type, located respectively adjacent the opposed sides of said first semiconductor region, said two second semiconductor regions each having sides forming the sides of the first protruding portion; a second insulation film formed on said first semiconductor region; conductive layers formed respectively in electrical connection with said two second semiconductor regions, at the sides of said two semiconductor regions, and extending from said electrical connection to a location over said second insulation film on said first semiconductor region, so as not to be indirect contact with the first semiconductor region; and first electrodes respectively provided in electrical connection with said conductive layers, and a second electrode in electrical connection with the first semiconductor region, the electrical connection of the first electrodes with the respective conductive layers, and the electrical connection between the second electrode and the first semiconductor region, each being positioned over the first semiconductor region.

Claim 18

A semiconductor device comprising: a semiconductor body of single crystal, having a first protruding portion, the first protruding portion having an upper surface and sides, the sides forming the periphery of the first protruding portion; a first insulation film having a first opening, said first insulation film being located on the surface of said body such that said first opening exposes the upper surface of said first protruding portion; a first semiconductor region, of a second conductivity type opposite to a first conductivity type, forming a part of said first protruding portion; a second semiconductor region, of said second conductivity type, formed beneath said first semiconductor region; a second insulation film formed on said first semiconductor region; a gate semiconductor region disposed so as to surround said first semiconductor region and to form the periphery of said first protruding portion, said gate semiconductor region being of said first conductivity type; a conductive layer formed in electrical connection with said gate semiconductor region and extending from the electrical connection to a location over said second insulation film on said first semiconductor region, so as not to be in direct contact with the first semiconductor region; and first, second and third electrodes provided in electrical connection, respectively, with said conductive layer, said first semiconductor region and said second semiconductor region, the electrical connection between the firs electrode and the conductive layer, and the electrical connection between the second electrode and first semiconductor region, each being over the first semiconductor region whereby a junction field effect transistor, with the first and second semiconductor regions respectively constituting source and drain regions of the transistor, is provided.

Claim 19

A semiconductor device comprising: a semiconductor body of single crystal, having a first protruding portion, the first protruding portion having an upper surface and sides, the sides forming the periphery of the first protruding portion; a first insulation film having a first opening, said first insulation film being located on the surface of said body such that said first opening exposes the upper surface of said first protruding portion; a first semiconductor region, of a second conductivity type opposite to a first conductivity type, forming a part of said first protruding portion; a second semiconductor region, of said second conductivity type, formed beneath said first semiconductor region; a second insulation film formed on said first semiconductor region; a gate semiconductor region disposed so as to surround said first semiconductor region and to form the periphery of said first protruding portion, said gate semiconductor region being of said first conductivity type; a conductive layer formed in electrical connection with said gate semiconductor region and extending from the electrical connection to a location over said second insulation film on said first semiconductor region, so as not to be in direct contact with the first semiconductor region; and first, second and third electrodes provided in electrical connection, respectively, with said conductive layer, said first semiconductor region and said second semiconductor region, the electrical connection between the firs electrode and the conductive layer, and the electrical connection between the second electrode and first semiconductor region, each being over the first semiconductor region whereby a junction field effect transistor, with the first and second semiconductor regions respectively constituting source and drain regions of the transistor, is provided.