Patent US4812415A successfully refreshed from Google Patents.
US4812415A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making semiconductor device free from electrical short circuits through a semiconductor layer
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1987-08-06
•
Granted: 1989-03-14
•
Expires: 2007-08-06
Abstract
Abstract An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced during the fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. By virtue of this configuration, short current paths do not result when electrodes are provided on the semiconductor layer.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Kunio Suzuki
- 👤 Mikio Kinka
- 👤 Takeshi Fukada
- 👤 Masayoshi Abe
- 👤 Ippei Kobayashi
- 👤 Katsuhiko Shibata
- 👤 Masato Susukida
- 👤 Susumu Nagayama
- 👤 Kaoru Koyanagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:30
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/135; H10F71/10; H10F19/00; H10F19/30; H10F19/31; H10F71/103; H10F71/134; H10F71/138; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/95; H10F77/953; H10F77/955; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S136/00; Y10S136/29; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first electrode on a substrate; forming a continuous semiconductor layer on the first electrode, said layer undesirably having gaps formed therein; coating the surface of said semiconductor layer with a positive photoresist to fill the gaps with said photoresist; irradiating said photoresist from the photoresist side of said substrate to the extendt that at least a portion of said photoresist residing in said gaps becomes fixed; removing the unfixed portion of said photoresist to thus plug the gaps with the fixed photoresist; forming a second electrode on said semiconductor layer; and applying reverse voltage to the semiconductor layer subsequent to forming the second electrode.
Claim 2
Independent Claim
117 words
A method of manufacturing a semiconductor device comprising the steps of: forming a first electrode on a substrate; forming a continuous semiconductor layer on the first electrode, said layer undesirably having gaps formed therein; coating the surface of said semiconductor layer with a positive photoresist to fill the gaps with said photoresist; irradiating said photoresist from the photoresist side of said substrate to the extendt that at least a portion of said photoresist residing in said gaps becomes fixed; removing the unfixed portion of said photoresist to thus plug the gaps with the fixed photoresist; forming a second electrode on said semiconductor layer; and applying reverse voltage to the semiconductor layer subsequent to forming the second electrode.
Claim 3
Dependent Claim
16 words
A method of claim 1 wherein said applying step is carried out at a high temperature.
Claim 4
Dependent Claim
22 words
A method of claim 2 wherein said temperature is chosen not so high as to degrade the characteristics of the semiconductor layer.
Claim 5
Dependent Claim
19 words
A method of claim 1 wherein said reverse voltage is less than the breakdown voltage of the semiconductor layer.
Claim 6
Dependent Claim
21 words
A method of claim 4 wherein said semiconductor device comprises a plurality of solar cells connected to each other in series.
Claim 7
Dependent Claim
43 words
A method of claim 5 wherein said applying step is carried out with a voltage source and a plurality of zener diodes which are connected to each other in series, the reverse voltage applied to each cell being obtained from the corresponding diode.
References Cited (Backward Citations)
AU60746A
Cited
JPS5877263A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-13 | 1992-09-12 | 1993-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-13 | 1996-09-12 | 1997-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-13 | 2000-09-12 | 2001-03-14 | $7700.00 | Window Closed / Lapsed |