Rectilinearly deflectable element fabricated from a single wafer

Claim 1

A method for forming a suspended element from a {100} silicon substrate wherein movement of the suspended element is rectilinear and proportional to an external force, comprising the steps of: etching two cavities in said substrate thereby defining a center member between said cavities having a first planar face and an opposing second planar face, said cavities also defining a supporting frame connected to opposing ends of said center member; forming a passivation layer on said first planar face with a pair of passivation openings symmetrically positioned on said first planar face for anisotropic etching in a subsequent step, each of said passivation openings having dimensions such that the set of {111} planes adjacent said passivation opening define a point of convergence beyond said silicon substrate; applying an anisotropic etching to said passivation openings for forming a pair of recesses in said center member thereby defining said suspended element; and timing said step of anisotropic etching such that each of said pair of recesses forms a narrowed portion of said center member between said second planar surface and each of said recesses, said narrowed portions defining a pair of flexing members for providing rectilinear deflection of said suspended element in linear proportion to the applied force.

Claim 2

A method for forming a suspended element from a {100} silicon substrate wherein movement of the suspended element is rectilinear and proportional to an external force, comprising the steps of: etching two cavities in said substrate thereby defining a center member between said cavities having a first planar face and an opposing second planar face, said cavities also defining a supporting frame connected to opposing ends of said center member; forming a passivation layer on said first planar face with a pair of passivation openings symmetrically positioned on said first planar face for anisotropic etching in a subsequent step, each of said passivation openings having dimensions such that the set of {111} planes adjacent said passivation opening define a point of convergence beyond said silicon substrate; applying an anisotropic etching to said passivation openings for forming a pair of recesses in said center member thereby defining said suspended element; and timing said step of anisotropic etching such that each of said pair of recesses forms a narrowed portion of said center member between said second planar surface and each of said recesses, said narrowed portions defining a pair of flexing members for providing rectilinear deflection of said suspended element in linear proportion to the applied force.

Claim 3

A method for forming a suspended element from a {100} silicon substrate wherein movement of the suspended element is rectilinear and proportional to an external force, comprising the steps of: etching two cavities in said substrate thereby defining a center member between said cavities having a first planar face and an opposing second planar face, said cavities also defining a supporting frame connected to opposing ends of said center member; forming a passivation layer on said first planar face having a first pair of passivation openings symmetrically positioned on said first planar surface and forming a passivation layer on said second planar surface having a second pair of passivation openings symmetrically positioned on said second planar surface and offset from said first pair of passivation openings, each of said passivation openings having dimensions such that the set of {111} planes adjacent each of said passivation opening define a point of convergence within said silicon substrate; applying an anisotropic etchant to said passivation openings for forming a frrst pair of recesses through said first planar surface and a second pair of recesses through said second planar surface wherein said suspended element is defined as the portion of said center member between said first pair of recesses; and timing said step of anisotropic etching to form a narrowed portion of said center member between each of said first pair of recesses and each of said second pair of recesses, said narrowed portions defining a pair of flexing members for providing rectilinear deflection of said suspended element in linear proportion to the applied force.

Claim 4

A method for forming a suspended element from a {100} silicon substrate wherein movement of the suspended element is rectilinear and proportional to an external force, comprising the steps of: etching two cavities in said substrate thereby defining a center member between said cavities having a first planar face and an opposing second planar face, said cavities also defining a supporting frame connected to opposing ends of said center member; forming a passivation layer on said first planar face having a first pair of passivation openings symmetrically positioned on said first planar surface and forming a passivation layer on said second planar surface having a second pair of passivation openings symmetrically positioned on said second planar surface and offset from said first pair of passivation openings, each of said passivation openings having dimensions such that the set of {111} planes adjacent each of said passivation opening define a point of convergence within said silicon substrate; applying an anisotropic etchant to said passivation openings for forming a frrst pair of recesses through said first planar surface and a second pair of recesses through said second planar surface wherein said suspended element is defined as the portion of said center member between said first pair of recesses; and timing said step of anisotropic etching to form a narrowed portion of said center member between each of said first pair of recesses and each of said second pair of recesses, said narrowed portions defining a pair of flexing members for providing rectilinear deflection of said suspended element in linear proportion to the applied force.