Patent US4811690A successfully refreshed from Google Patents.
US4811690A
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Thin film deposition apparatus
Assignee: Mitsubishi Electric Corp
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Filing: 1988-03-25
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Granted: 1989-03-14
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Expires: 2008-03-25
Abstract
Abstract A thin film deposition apparatus includes an ionizing means for ionizing part of clusters from a vapor generating source by the cluster ion beam method. The ionizing means has an ionizing filament for emitting thermoelectrons to ionize the clusters, an electron extracting electrode for accelerating the thermoelectrons toward the clusters, and an electron controlling electrode disposed on the side of the electron extracting electrode for controlling the presence of the thermoelectrons at the center of the ionizing section. The thermoelectrons are substantially eliminated in the vicinity of the center of the ionizing portion due to the provision of the thermoelectron extracting electrode, thereby substantially eliminating the cluster ions generated in the vicinity of the center of the ionizing portion and reducing the quantity of clusters that concentrate on the center of a substrate. This makes the ion distribution on the substrate uniform so as to enable formation of a thin film which is uniform in terms of film thickness and film quality.
Inventors
- 👤 Yasuyuki Kawagoe
- 👤 Kenichiro Yamanishi
- 👤 Seiji Yasunaga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:44
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/221; H; H01; H01J; H01J27/00; H01J27/02; H01J27/20
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
151 words
A thin film deposition apparatus comprising: a vacuum chamber; means for mounting a substrate within said vacuum chamber; a vapor generating source for ejecting vapors of a substance to be deposited on said substrate into said vacuum chamber and thereby generating clusters in each of which a large number of atoms in said vapors are loosely combined; an ionizing means for ionizing some of said clusters in an ionizing region of said chamber; and an accelerating electrode for accelerating the ionized cluster ions and causing them to collide with said substrate to deposit a thin film; wherein said ionizing means includes an ionizing filament for emitting thermoelectrons to ionize said clusters, and electron extracting electrode for accelerating said thermoelectrons toward said clusters, and an electron controlling electrode disposed opposite said electron extracting electrode from said filament for controlling the presence of the thermoelectrons in a central portion of said ionizing region.
Claim 2
Dependent Claim
151 words
A thin film deposition apparatus comprising: a vacuum chamber; means for mounting a substrate within said vacuum chamber; a vapor generating source for ejecting vapors of a substance to be deposited on said substrate into said vacuum chamber and thereby generating clusters in each of which a large number of atoms in said vapors are loosely combined; an ionizing means for ionizing some of said clusters in an ionizing region of said chamber; and an accelerating electrode for accelerating the ionized cluster ions and causing them to collide with said substrate to deposit a thin film; wherein said ionizing means includes an ionizing filament for emitting thermoelectrons to ionize said clusters, and electron extracting electrode for accelerating said thermoelectrons toward said clusters, and an electron controlling electrode disposed opposite said electron extracting electrode from said filament for controlling the presence of the thermoelectrons in a central portion of said ionizing region.
Claim 3
Dependent Claim
18 words
A thin film deposition apparatus according to claim 1 wherein said electron controlling electrode is a mesh electrode.
Claim 4
Dependent Claim
19 words
A thin film deposition apparatus according to claim 2 wherein said mesh electrode is made of a high-melting metal.
Claim 5
Dependent Claim
15 words
A thin film deposition apparatus according to claim 3 wherein said high-melting metal is tungsten.
Claim 6
Dependent Claim
25 words
A thin film deposition apparatus according to claim 1 wherein said electron controlling electrode has the same electric potential as that of said ionizing filament.
Claim 7
Dependent Claim
45 words
A thin film deposition apparatus according to claim 1 wherein said vapor generating source has a side aperture and said electron controlling electrode has an accelerating electrode side aperture which is different from said vapor generating source side aperture and is a frustum in shape.
Claim 8
Dependent Claim
17 words
A thin film deposition apparatus according to claim 6 wherein said frustum is a frustum of cone.
Claim 9
Dependent Claim
17 words
A thin film deposition apparatus according to claim 6 wherein said frustum is a frustum of pyramid.
Claim 10
Dependent Claim
24 words
A thin film deposition apparatus according to claim 6 wherein said accelerating electrode side aperture is larger than said vapor generating source side aperture.
Claim 11
Dependent Claim
24 words
A thin film deposition apparatus according to claim 6 wherein said accelerating electrode side aperture is smaller than said vapor generating source side aperture.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-13 | 1992-09-12 | 1993-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-13 | 1996-09-12 | 1997-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-13 | 2000-09-12 | 2001-03-14 | $7700.00 | Window Closed / Lapsed |