Method for the optical recording of information and an optical recording element used in the method

Claim 1

A method for the optical nonreversible recording of information in which a recording element which comprises a substrate and a recording layer provided thereon is exposed to laser light which is modulated in accordance with the information to be recorded, in which an optically readable change in structure occurs in the recording layer in the exposed places which is read by means of laser light via the substrate on the basis of reflection differences with the surroundings, characterized in that an amorphous recording layer having the composition [R.sub.x --Sb.sub.1-x ].sub.y Q.sub.1--y (formula 1) wherein R is selected from the group formed by Ga and In, Q is selected from the group formed by Se and Te, x=0.46-0.54 y=0.94-1.00 or mixtures thereof provided on a snythetic resin substrate in a maximum thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm which is pulsated in accordance with the binary (digital) information to be recorded with a pulse time of at most 200 ns, a crystalline area (bit) with maximum dimensions of a few micrometers being formed in the amorphous layer in the exposed places.

Claim 2

A method for the optical nonreversible recording of information in which a recording element which comprises a substrate and a recording layer provided thereon is exposed to laser light which is modulated in accordance with the information to be recorded, in which an optically readable change in structure occurs in the recording layer in the exposed places which is read by means of laser light via the substrate on the basis of reflection differences with the surroundings, characterized in that an amorphous recording layer having the composition [R.sub.x --Sb.sub.1-x ].sub.y Q.sub.1--y (formula 1) wherein R is selected from the group formed by Ga and In, Q is selected from the group formed by Se and Te, x=0.46-0.54 y=0.94-1.00 or mixtures thereof provided on a snythetic resin substrate in a maximum thickness of 150 nm is exposed to infrared laser light having a wavelength of 750-900 nm which is pulsated in accordance with the binary (digital) information to be recorded with a pulse time of at most 200 ns, a crystalline area (bit) with maximum dimensions of a few micrometers being formed in the amorphous layer in the exposed places.