Patent US4806997A successfully refreshed from Google Patents.
US4806997A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double heterostructure optoelectronic switch
Assignee: AT&T Inc
•
Filing: 1988-01-22
•
Granted: 1989-02-21
•
Expires: 2008-01-22
Abstract
Abstract A double heterostructure opto-electronic device capable of both electronic and photonic switching is described.
Inventors
- 👤 John G. Simmons
- 👤 Geoffrey W. Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:55
CPC Classifications
G; G02; G02F; G02F3/00; H; H03; H03K; H03K19/00; H03K19/02; H03K19/14; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10F30/263; H10F55/00; H10F55/10; H10F55/15; H10F55/155
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
107 words
A switch comprising first and second regions having a first conductivity type and first and second bandgaps; said regions having an interface adapted to the formation of an inversion layer, a third region, said third region having a second conductivity type and a third bandgap, said second bandgap being less than said first and third bandgaps, said second and third regions having an interface; said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions; and means for optically illuminating said second region.
Claim 2
Dependent Claim
107 words
A switch comprising first and second regions having a first conductivity type and first and second bandgaps; said regions having an interface adapted to the formation of an inversion layer, a third region, said third region having a second conductivity type and a third bandgap, said second bandgap being less than said first and third bandgaps, said second and third regions having an interface; said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions; and means for optically illuminating said second region.
Claim 3
Dependent Claim
23 words
A switch as recited in claim 1 further comprising a first resistance connected to at least one of said first and third regions.
Claim 4
Dependent Claim
18 words
A switch as recited in claim 2 in which said first resistance is connected to said first region.
Claim 5
Dependent Claim
153 words
An optical device comprising a first switch as recited in claim 3, and further comprising a second switch, said second switch comprising first and second regions having a first conductivity type and first and second bandages; said regions having an interface adapted to the formation of an inversion layer; a third region, said third region having a second conductivity type and a third bandgap, said second bandgap being less than said first and third bandgaps, said second and third regions having an interface; said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions; and means for optically illuminating and second region, said second switch having a third terminal, said first and second switches being electrically connected between said first region and said third terminal of said second switch.
Claim 6
Dependent Claim
22 words
An optical device as recited in claim 4, further comprising a second resistance connected to said third region of said second switch.
Claim 7
Dependent Claim
18 words
A switch as recited in claim 2 in which said first resistance is connected to said third region.
Claim 8
Dependent Claim
153 words
An optical device comprising a first switch as recited in claim 2 and further comprising a second switch said second switch comprising first and second regions having a first conductivity type and first and second bandgaps; said regions having an interface adapted to the formation of an inversion layer, a third region, said third region having a second conductivity type and a third bandgap; said second and third regions having an interface, said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions; and means for optically illuminating said second region, said second switch having a third terminal, said first and second switches being electrically connected between said third region and said third terminal of said second switch, a first resistance connected to said region of said first switch.
Claim 9
Dependent Claim
20 words
An optical device as recited in claim 7, a second resistance connected to said third region of said second switch.
Claim 10
Dependent Claim
129 words
An optical device as recited in claim 8 further comprising a third switch, said third switch comprising first and second regions having a first conductivity type and first and second bandgaps; said regions having an interface adapted to the formation of an inversion layer; a third region, said third region having a second conductivity type and a third bandgap, said second bandgap being less than said first and third bandgaps, said second and third regions having an interface; said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions; and means for optically illuminating said second region, said first and third switches being series connected.
Claim 11
Dependent Claim
130 words
An optical device as recited in claim 3 further comprising a third switch, said third switch comprising first and second regions having a first conductivity type and first and second bandgaps; said regions having an interface adapted to the formation of an inversion layer; a t hird region, said third region having a second conductivity type and a third bandgap, said second bandgap being less than said first and third bandgaps, said second and third regions having an interface; said first, second and third regions comprising semiconductors selected from the group consisting of Group II-VI and Group III-V semiconductors, electrical contacts to said first and at least one of said second and third regions; and means for optically illuminating said second region, said first and third switches being parallel connected.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-21 | 1992-08-22 | 1993-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-21 | 1996-08-22 | 1997-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-21 | 2000-08-22 | 2001-02-21 | $7700.00 | Window Closed / Lapsed |