Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
195 words
A magneto-electro-optic effect light modulator for effecting a desired phase and an intensity modulation of infrared light incident upon a semiconductor having an energy gap transparent for the incident light, said modulator utilizing the population inversion caused by an action of the Lorentz force comprising: a rectangular solid-like semiconductor element made of one member selected from the group consisting of an n-type semiconductor, a p-type semiconductor and an intrinsic semiconductor, said semiconductor element having no pn-junction and having a band-gap being related to the energy of the incident infrared-light; a magnet for applying a magnetic field H to said semiconductor element; electrodes for passing an electric current in said semiconductor element across the magnetic field; a power source for passing an electric current proportional to the modulation desired through said electrodes said current effecting a phase and intensity modulation of the incident infrared light; an entrance polarizer disposed in front of said semiconductor element for linearly polarizing infrared-light passing through said entrance polarizer; and an exit polarizer disposed behind said semiconductor element for linearly polarizing the transmitted infrared-light, passing through said exit polarizer, said exit polarizer having a polarization plane different from said entrance polarizer.
Claim 2
Dependent Claim
195 words
A magneto-electro-optic effect light modulator for effecting a desired phase and an intensity modulation of infrared light incident upon a semiconductor having an energy gap transparent for the incident light, said modulator utilizing the population inversion caused by an action of the Lorentz force comprising: a rectangular solid-like semiconductor element made of one member selected from the group consisting of an n-type semiconductor, a p-type semiconductor and an intrinsic semiconductor, said semiconductor element having no pn-junction and having a band-gap being related to the energy of the incident infrared-light; a magnet for applying a magnetic field H to said semiconductor element; electrodes for passing an electric current in said semiconductor element across the magnetic field; a power source for passing an electric current proportional to the modulation desired through said electrodes said current effecting a phase and intensity modulation of the incident infrared light; an entrance polarizer disposed in front of said semiconductor element for linearly polarizing infrared-light passing through said entrance polarizer; and an exit polarizer disposed behind said semiconductor element for linearly polarizing the transmitted infrared-light, passing through said exit polarizer, said exit polarizer having a polarization plane different from said entrance polarizer.
Claim 3
Dependent Claim
18 words
A magneto-electro-optic effect light modulator according to claim 1, wherein said semiconductor element is a crystal of InSb.
Claim 4
Dependent Claim
18 words
A magneto-electro-optic effect light modulator according to claim 1, wherein said semiconductor element is a crystal of InAs.
Claim 5
Dependent Claim
31 words
A magneto-electro-optic effect light modulator according to claim 1, wherein said semiconductor element is a mixed crystal of Hg 1-x Cd x Te and wherein X is in the range 0.15>x≦0.5.
Claim 6
Dependent Claim
31 words
A magneto-electro-optic effect light modulator according to claim 1, wherein said semiconductor element is a mixed crystal of Pb 1-x Sn x Te and wherein X is in the range 0≦x≦1.
Claim 7
Dependent Claim
31 words
A magneto-electro-optic effect light modulator according to claim 1, wherein said semiconductor element is a mixed crystal of Pb 1-x Sn x Se and wherein x is in the range 0≦x≦0.5.