US4450460A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magnetic-infrared-emitting diode
Assignee: Kyoto University
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Filing: 1981-09-24
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Granted: 1984-05-22
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Expires: 2001-09-24
Abstract
Abstract A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as across the magnetic field, whereby an infrared radiation can be emitted perpendicular thereto in a wide range of temperature from room temperature to liquid nitrogen temperature. Consequently, an infrared emitting device, for instance, an infrared laser diode can be fabricated and operated at room temperature without necessity of a dewar filled with refrigerating material such as liquid nitrogen. Various kinds of compact infrared-emitting equipments such as an infrared radar can be realized by modulating the current supplied to the above infrared emitting device.
Inventors
- 👤 Takeshi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:55
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H01; H01S; H01S5/00; H01S5/30; H10H; H10H20/00; H01S5/06; H01S5/0607; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
102 words
A magneto-infrared-emitting diode formed of a plate of an intrinsic semiconductor having a narrow energy gap which does not exceed substantially 0.6 eV, said semiconductor being equipped with no injection electrode and including: a magnet for applying a magnetic field upon said magneto-infrared-emitting diode in parallel with said plate, and a current source for supplying a current to said magneto-infrared-emitting diode in parallel with said plate as well as orthogonal to said magnetic field so as to emit an infrared radiation of a wavelength greater than 2.1 μm from said magneto-infrared-emitting diode substantially perpendicular to said plate at least at room temperature.
Claim 2
Dependent Claim
102 words
A magneto-infrared-emitting diode formed of a plate of an intrinsic semiconductor having a narrow energy gap which does not exceed substantially 0.6 eV, said semiconductor being equipped with no injection electrode and including: a magnet for applying a magnetic field upon said magneto-infrared-emitting diode in parallel with said plate, and a current source for supplying a current to said magneto-infrared-emitting diode in parallel with said plate as well as orthogonal to said magnetic field so as to emit an infrared radiation of a wavelength greater than 2.1 μm from said magneto-infrared-emitting diode substantially perpendicular to said plate at least at room temperature.
Claim 3
Dependent Claim
24 words
A magneto-infrared-emitting diode as claimed in claim 1, wherein said diode is operated in a temperature range from room temperature to liquid nitrogen temperature.
Claim 4
Dependent Claim
31 words
A magneto-infrared-emitting diode as claimed in claim 1, wherein said intrinsic semiconductor is selected from a group consisting of Pb 1-x Sn x Se, InAs and Bi 1-x Sb x .
Claim 5
Dependent Claim
33 words
A magneto-infrared-emitting diode as claimed in claim 3, wherein a wavelength of said infrared radiation emitted from said magneto-infrared-emitting diode can be varied by selecting a component composition ratio x of said semiconductor.
Claim 6
Dependent Claim
29 words
A magneto-infrared-emitting diode as claimed in claim 1, wherein said current is supplied to said plate through electrodes fitted respectively on both ends of said plate by ohmic contacts.
Claim 7
Dependent Claim
34 words
A magneto-infrared-emitting diode as claimed in claim 1, wherein said current source is formed of a microphone for deriving an audio information current therefrom as said current to be supplied to said magneto-infrared-emitting diode.
Claim 8
Dependent Claim
31 words
A magneto-infrared-emitting diode as claimed in claim 1, wherein said infrared radiation emitted from said magneto-infrared-emitting diode can be intensity-modulated by modulating said current to be supplied to said magneto-infrared-emitting diode.
Claim 9
Dependent Claim
77 words
An infrared communication equipment comprising at least two magneto-infrared-emitting diodes as claimed in claim 1, wherein one of said magneto-infrared emitting diodes is used for generating an infrared radiation to be transmitted and the other of said magneto-infrared-emitting diodes is used for detecting an infrared radiation to be received by using a photo-magneto-electric effect in a reverse process so as to operate said infrared communication equipment at a wavelength between 2 and 25 μm at room temperature.
Claim 10
Dependent Claim
55 words
An infrared range finder comprising at least two magneto-infrared-emitting diodes as claimed in claim 1, wherein one of said magneto-infrared-emitting diodes is used for generating an infrared radiation to irradiate a body to be measured and the other of said magneto-infrared-emitting diodes is used for detecting an infrared radiation to be reflected from said body.
Claim 11
Dependent Claim
31 words
An infrared microscope comprising at least one magneto-infrared-emitting diode as claimed in claim 1, wherein said magneto-infrared-emitting diode is used for irradiating a material to be observed through an optical system.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-05-22 | 1987-11-21 | 1988-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-05-22 | 1991-11-21 | 1992-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-05-22 | 1995-11-21 | 1996-05-22 | $7700.00 | Window Closed / Lapsed |