US3167663A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Magneto-semiconductor devices
Assignee: Massachusetts Institute of Technology
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Filing: 1962-08-06
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Granted: 1965-01-26
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Expires: 1982-08-06
Abstract
No abstract record available.
Inventors
- 👤 Melngailis Ivars
- 👤 Arthur R Calawa
- 👤 Robert H Rediker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:48
CPC Classifications
H; H03; H03K; H03K17/00; Y; Y10; Y10S; Y10S505/00; Y10S505/825; Y10S505/856; Y10S505/857; Y10S505/86
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
130 words
A SEMICONDUCTOR CONTROL DEVICE COMPRISING A BAR OF SEMICONDUCTOR MATERIAL HAVING A RECTIFYING JUNCTION CONTACT SEPARATED FROM AN OHMIC CONTACT BY A DISTANCE MUCH LONGER THAN THE MINORITY CARRIER DIFFUSION LENGTH AT LOW INJECTION LEVELS, MEANS FOR MAINTAINING SAID BAR AT A TEMPERATURE SUFFICIENTLY LOW TO PERMIT MINORITY CARRIER INJECTION ACROSS SAID JUNCTION, AN OUTPUT LOAD FOR SAID DEVICE, A POWER SOURCE BIASING SAID JUNCTION FOR FORWARD CURRENT FLOW THROUGH SAID LOAD AT A CARRIER INJECTION DENSITY PRODUCING A PLASMA, A MAGNETIC FIELD APPLIED TRANSVERSE TO THE DIRECTION OF CURRENT FLOW IN SAID BAR TO DEFLECT SAID PLASMA AND MEANS FOR CONTROLLING THE STRENGTH OF SAID FIELD TO CONTROL THE DEFLECTION OF SAID PLASMA THEREBY CHANGING THE RESISTANCE OF SAID BASE TO CONTROL THE FLOW OF CURRENT IN SAID LOAD.
Claim 2
Dependent Claim
130 words
A SEMICONDUCTOR CONTROL DEVICE COMPRISING A BAR OF SEMICONDUCTOR MATERIAL HAVING A RECTIFYING JUNCTION CONTACT SEPARATED FROM AN OHMIC CONTACT BY A DISTANCE MUCH LONGER THAN THE MINORITY CARRIER DIFFUSION LENGTH AT LOW INJECTION LEVELS, MEANS FOR MAINTAINING SAID BAR AT A TEMPERATURE SUFFICIENTLY LOW TO PERMIT MINORITY CARRIER INJECTION ACROSS SAID JUNCTION, AN OUTPUT LOAD FOR SAID DEVICE, A POWER SOURCE BIASING SAID JUNCTION FOR FORWARD CURRENT FLOW THROUGH SAID LOAD AT A CARRIER INJECTION DENSITY PRODUCING A PLASMA, A MAGNETIC FIELD APPLIED TRANSVERSE TO THE DIRECTION OF CURRENT FLOW IN SAID BAR TO DEFLECT SAID PLASMA AND MEANS FOR CONTROLLING THE STRENGTH OF SAID FIELD TO CONTROL THE DEFLECTION OF SAID PLASMA THEREBY CHANGING THE RESISTANCE OF SAID BASE TO CONTROL THE FLOW OF CURRENT IN SAID LOAD.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-01-26 | 1968-07-27 | 1969-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-01-26 | 1972-07-27 | 1973-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-01-26 | 1976-07-27 | 1977-01-26 | $7700.00 | Window Closed / Lapsed |