Patent AU472889B2 successfully refreshed from Google Patents.
US4170781A
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Photodiode and method of manufacture
Assignee: United States Department of the Army
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Filing: 1978-04-06
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Granted: 1979-10-09
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Expires: 1998-04-06
Abstract
Abstract A process is described in which planar photodiodes are formed by diffusing lead into p-type Pb 0 .8 Sn 0 .2 Te single crystal material.
Inventors
- 👤 John T. Cox
- 👤 Michael B. Garber
- 👤 Marilyn A. Jasper
- 👤 Randolph E. Longshore
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:25
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/127; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F30/2218
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
109 words
A photodiode comprising: a chip of a p-type lead-tin-telluride semiconductor having lead diffused into at least one portion of one surface thereof to form at least one island of n-type semiconductor surrounded by said p-type semiconductor; a frame of inorganic dielectric material covering a continuous border region of said island, terminating at the perimeter of said island and defining an exposed central surface portion of said island; a layer of organic photoresist material covering each such frame and at least a portion of said p-type semiconductor; and an indium leadout contacting said exposed central portion of said island and overlapping said frame, said photoresist material and said p-type semiconductor.
Claim 2
Dependent Claim
109 words
A photodiode comprising: a chip of a p-type lead-tin-telluride semiconductor having lead diffused into at least one portion of one surface thereof to form at least one island of n-type semiconductor surrounded by said p-type semiconductor; a frame of inorganic dielectric material covering a continuous border region of said island, terminating at the perimeter of said island and defining an exposed central surface portion of said island; a layer of organic photoresist material covering each such frame and at least a portion of said p-type semiconductor; and an indium leadout contacting said exposed central portion of said island and overlapping said frame, said photoresist material and said p-type semiconductor.
Claim 3
Dependent Claim
13 words
A photodiode according to claim 1 wherein: said inorganic material is silicon monoxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-08 | 1983-04-09 | 1983-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-08 | 1987-04-09 | 1987-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-08 | 1991-04-09 | 1991-10-09 | $7700.00 | Window Closed / Lapsed |