EP0132139A2
Expired / Lapsed
EP
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A light amplifier based on the magnetoelectric-photo effect
Assignee: Kyoto University
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Filing: 1984-07-13
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Granted: —
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Expires: 2004-07-13
Abstract
Abstract An anomalous intensification of the infrared emission from n-InSb having a central wavelength almost equal to the energy gap has been observed, as a result of the co-operation of the magnetoconcentration effect and the photo-excitation, in the temperature range from 80 to 300°K. This suggests that a light amplifier which is operates at room temperature can be realized through the process for photons with a wavelength corresponding to the energy gap of the semiconductor material forming the light amplifier concerned.
Inventors
- 👤 Takeshi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 06:14
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/0607; H01S5/50; H01S5/20; H01S5/22; H01S5/223; H01S5/30; H01S5/32; H01S5/3222; H01S5/327
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
131 words
A light amplifier based on the magnetoelectric-photo effect, wherein a semiconductor block consisting of a material, having the mobility of electrons and holes corresponding at least to an intensity of a magnetic field, is disposed in said magnetic field having said intensity which is generated by a permanent magnet or an electromagnet, and a population inversion region of electrons and holes is formed in said semiconductor block along a surface crossing mutually opposed surfaces of said semiconductor block by the Lorentz force generated by supplying an electric current across said magnetic field through electrodes provided on said mutually opposed surfaces respectively, whereby a light incident from an opposite surface to said crossing surface, passing through said population inversion region of electrons and holes is amplified and emitted from said crossing surface.
Claim 2
Dependent Claim
131 words
A light amplifier based on the magnetoelectric-photo effect, wherein a semiconductor block consisting of a material, having the mobility of electrons and holes corresponding at least to an intensity of a magnetic field, is disposed in said magnetic field having said intensity which is generated by a permanent magnet or an electromagnet, and a population inversion region of electrons and holes is formed in said semiconductor block along a surface crossing mutually opposed surfaces of said semiconductor block by the Lorentz force generated by supplying an electric current across said magnetic field through electrodes provided on said mutually opposed surfaces respectively, whereby a light incident from an opposite surface to said crossing surface, passing through said population inversion region of electrons and holes is amplified and emitted from said crossing surface.
Claim 3
Dependent Claim
24 words
A light amplifier as claimed in claim 1, wherein said electrodes are formed of material for injecting the minority carriers among electrons and holes.
Claim 4
Dependent Claim
51 words
A light amplifier as claimed in claim 1 or 2 wherein said material is selected from a group consisting of InSb, InAs, Hg 1-x Cd x Te, Pb 1-x Sn x Te, Pb 1-x Sn x Se, Bi 1-x Sb x , Ge, Si, GaAs, GaN, InP and ZnS (α) .
Claim 5
Dependent Claim
33 words
A light amplifier as claimed in claim 1, 2 or 3 wherein the wavelength of the light emitted from said crossing surface can be variable corresponding to said intensity of said magnetic field.
Claim 6
Dependent Claim
47 words
An optical communication apparatus comprising at least two light amplifiers as claimed in claim 1,2, 3 or 4 wherein one of said light amplifiers is used for amplifying a light to be transmitted and the other of said light amplifiers is used for amplifying a received light.
Claim 7
Dependent Claim
32 words
An optical communication apparatus as claimed in claim 5, wherein said at least two light amplifiers consist in a repeater amplifier together with a signal waveform restorer connected between said light amplifiers.
Claim 8
Dependent Claim
84 words
A light amplifier including a semiconductor block located within a magnetic field generated or to be generated by a permanent or electro-magnet, the block having electrodes on opposed surfaces via which a current can pass through the block across the magnetic field whereby a population inversion region of electrodes and holes is formed in the block along a third surface extending between said opposed surfaces, such that light incident on a surface opposite said third surface is amplified and emitted from said third surface.
Claim 9
Dependent Claim
84 words
A light amplifier including a semiconductor block located within a magnetic field generated or to be generated by a permanent or electro-magnet, the block having electrodes on opposed surfaces via which a current can pass through the block across the magnetic field whereby a population inversion region of electrodes and holes is formed in the block along a third surface extending between said opposed surfaces, such that light incident on a surface opposite said third surface is amplified and emitted from said third surface.
References Cited (Backward Citations)
No citation records indexed.
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