bi-CMOS buffer cascaded to CMOS driver having PMOS pull-up transistor with threshold voltage greater than VBE of bi-CMOS bipolar pull-up transistor

Claim 2

A buffer circuit for a subsequent stage having a series combination of first and second field-effect transistors different in channel conductivity type from each other and coupled between first and second sources of voltage, said first field-effect transistor having a preselected threshold voltage, comprising: (a) an input node to which an input signal is applied; (b) an output node coupled to respective gate electrodes of said first and second field-effect transistors; (c) a bipolar transistor having a base electrode coupled to said input node, an emitter electrode coupled to said output node and a collector electrode coupled to said first source of voltage, said bipolar transistor providing a conduction path from said first source of voltage to said output node when the bipolar transistor is turned on; and (d) switch means coupled between said output node and said second source of voltage to receive said input signal from said input node, said switch means electrically connecting said output node to said second source voltage when said bipolar transistor is turned off, wherein said bipolar transistor turns on in the presence of a preselected difference voltage between the emitter electrode and the base electrode, said preselected difference voltage being smaller in value than said preselected threshold voltage.

Claim 3

A buffer circuit as set forth in claim 1, in which said bipolar transistor is of an n-p-n type and turns on when a preselected difference voltage ranging from 0.6 volt and 0.8 volt is applied between the emitter electrode and the base electrode.

Claim 4

A buffer circuit as set forth in claim 2, in which said first field-effect transistor is of a p-channel type and turns on when said preselected threshold voltage larger in value than said preselected difference voltage by a value ranging between 0.1 and 0.3 volt is applied thereto.

Claim 5

A buffer circuit as set forth in claim 1, in which said buffer circuit further comprises a logic gate coupled between said first and second sources of voltage and produces said input signal appearing at said input node.

Claim 6

A buffer circuit as set forth in claim 4, in which said logic gate has a series combination of third and fourth field-effect transistors different in channel conductivity type from each other and complementarily shifted between on and off states to produce said input signal appearing at said input node.

Claim 7

A buffer circuit as set forth in claim 4, said buffer circuit further comprises a source follower circuit coupled between said output node and said second source of voltage, and an additional bipolar transistor coupled between said output node and said second source of voltage and driven by the source follower circuit.

Claim 8

A buffer circuit as set forth in claim 6, in which said source follower circuit has a series combination of a fifth field-effect transistor and a resistor.

Claim 9

A buffer circuit for a subsequent stage having a series combination of a first p-channel type field-effect transistor and a second n-channel type field-effect transistor and coupled between a source of positive voltage and a source of ground voltage, said first p-channel type field-effect transistor having a preselected threshold voltage, comprising: (a) a series combination of a first n-p-n type bipolar transistor and a second n-p-n type bipolar transistor coupled between said source of positive voltage and said source of ground voltage, said first n-p-n bipolar transistor turning on when a preselected difference voltage is applied between emitter and base electrodes thereof; (b) an output node provided between said first n-p-n bipolar transistor and said second n-p-n bipolar transistor; (c) a logic gate having a series combination of a third p-channel type field-effect transistor and a fourth n-channel type field-effect transistor and a common drain node coupled to a base electrode of said first n-p-n bipolar transistor, and coupled between said souce of positive voltage and said source of ground voltage; (d) a source follower circuit having a series combination of a fifth n-channel type field-effect transistor and a resistor, and coupled between said output node and said source of ground voltage, said fifth n-channel field-effect transistor having a source node coupled to a base electrode of said second n-p-n bipolar transistor; and (e) an input node receiving an input signal, said third, fourth and fifth field-effect transistors being coupled to said input node, wherein said preselected difference voltage has a value ranging between 0.6 volt to 0.8 volt which is smaller than said preselected threshold voltage by a value ranging between 0.1 volt and 0.3 volt.

Claim 10

A buffer circuit for a subsequent stage having a series combination of a first p-channel type field-effect transistor and a second n-channel type field-effect transistor and coupled between a source of positive voltage and a source of ground voltage, said first p-channel type field-effect transistor having a preselected threshold voltage, comprising: (a) a series combination of a first n-p-n type bipolar transistor and a second n-p-n type bipolar transistor coupled between said source of positive voltage and said source of ground voltage, said first n-p-n bipolar transistor turning on when a preselected difference voltage is applied between emitter and base electrodes thereof; (b) an output node provided between said first n-p-n bipolar transistor and said second n-p-n bipolar transistor; (c) a logic gate having a series combination of a third p-channel type field-effect transistor and a fourth n-channel type field-effect transistor and a common drain node coupled to a base electrode of said first n-p-n bipolar transistor, and coupled between said souce of positive voltage and said source of ground voltage; (d) a source follower circuit having a series combination of a fifth n-channel type field-effect transistor and a resistor, and coupled between said output node and said source of ground voltage, said fifth n-channel field-effect transistor having a source node coupled to a base electrode of said second n-p-n bipolar transistor; and (e) an input node receiving an input signal, said third, fourth and fifth field-effect transistors being coupled to said input node, wherein said preselected difference voltage has a value ranging between 0.6 volt to 0.8 volt which is smaller than said preselected threshold voltage by a value ranging between 0.1 volt and 0.3 volt.

Claim 11

A buffer circuit for a subsequent stage having a series combination of a first load transistor and a second field-effect transistor coupled between first and second sources of voltage producing respective voltage level different from each other, said second field-effect transistor having a preselected threshold voltage, comprising: (a) a series combination of first and second bipolar transistors coupled between said first and second sources of voltage, said second bipolar transistor turning on when a preselected difference voltage is applied between base and emitter electrodes thereof; (b) an output node coupled to a gate electrode of said second field-effect transistor; (c) a logic gate coupled between said first and second sources of voltage and producing a first signal applied to a base electrode of said first bipolar transistor; and (d) a source follower circuit coupled between said output node and said second source of voltage and producing a second signal applied to the base electrode of said second bipolar transistor, wherein said preselected difference voltage is smaller in value than said preselected threshold voltage.

Claim 12

A buffer circuit for a subsequent stage having a series combination of a first load transistor and a second field-effect transistor coupled between first and second sources of voltage producing respective voltage level different from each other, said second field-effect transistor having a preselected threshold voltage, comprising: (a) a series combination of first and second bipolar transistors coupled between said first and second sources of voltage, said second bipolar transistor turning on when a preselected difference voltage is applied between base and emitter electrodes thereof; (b) an output node coupled to a gate electrode of said second field-effect transistor; (c) a logic gate coupled between said first and second sources of voltage and producing a first signal applied to a base electrode of said first bipolar transistor; and (d) a source follower circuit coupled between said output node and said second source of voltage and producing a second signal applied to the base electrode of said second bipolar transistor, wherein said preselected difference voltage is smaller in value than said preselected threshold voltage.