Patent US4805084A successfully refreshed from Google Patents.
US4805084A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Direct DC to RF conversion by impulse excitation
Assignee: General Electric Co
•
Filing: 1988-04-25
•
Granted: 1989-02-14
•
Expires: 2008-04-25
Abstract
Abstract A device for converting DC to RF has a monolithic PIN diode adapted to be coupled to a DC supply. The diode receives light switching pulses and is coupled to a monolithic resonator. The monolithic form provides compactness and reliability, while the diode, which is reversed biased when OFF, prevents substrate leakage currents. The diode and the resonator can be made in a single substrate, e.g., silicon, or in different substrates, e.g., silicon for the diode to obtain a long carrier lifetime and, thus, minimize the light pulse repetition rate, and GaAs for the resonator to obtain a high Q. The resonator can also act as an impedance transformer.
Inventors
- 👤 Arye Rosen
- 👤 Chi H. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:38
CPC Classifications
H; H03; H03B; H03B9/00; H03B9/12; H03B9/14; H03B9/147
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
59 words
A device for converting voltage from a DC supply to RF comprising: a monolithic resonator; and a monolithic lateral PIN diode optical switch means having a pair of opposite conductivity type regions adapted to be coupled to the DC supply, one of said regions coupled to said resonator, and an intrinsic region adapted to receive an optical switching signal.
Claim 2
Independent Claim
59 words
A device for converting voltage from a DC supply to RF comprising: a monolithic resonator; and a monolithic lateral PIN diode optical switch means having a pair of opposite conductivity type regions adapted to be coupled to the DC supply, one of said regions coupled to said resonator, and an intrinsic region adapted to receive an optical switching signal.
Claim 3
Dependent Claim
49 words
A device as claimed in claim 1 wherein said opposite conductivity type regions are P and N regions respectively, said P region being adapted to be coupled to a negative terminal of said supply, the N region being adapted to be coupled to a positive terminal of the supply.
Claim 4
Dependent Claim
18 words
A device as claimed in claim 1 further comprising a common substrate for said resonator and said diode.
Claim 5
Dependent Claim
13 words
A device as claimed in claim 1 wherein said substrate comprises a semiconductor.
Claim 6
Dependent Claim
13 words
A device as claimed in claim 4 wherein said semiconductor substrate comprises silicon.
Claim 7
Dependent Claim
13 words
A device as claimed in claim 3 wherein said substrate comprises a semi-insulator.
Claim 8
Dependent Claim
23 words
A device as claimed in claim 1 wherein said diode and said resonator each comprise a substrate of materials different from each other.
Claim 9
Dependent Claim
15 words
A device as claimed in claim 7 wherein said resonator substrate overlies said diode substrate.
Claim 10
Dependent Claim
44 words
A device as claimed in claim 8 further comprising first, second, and third conductors overlying said resonator substrate; first and second conducting bridges coupled between said first and second conductors, respectively, and the P and N conductivity type regions, respectively, of said PIN diode.
Claim 11
Dependent Claim
27 words
A device as claimed in claim 9, further comprising first and second insulating filets disposed between said first and second conducting bridges, respectively, and said diode substrate.
Claim 12
Dependent Claim
21 words
A device as claimed in claim 7 wherein said resonator substrate is a semi-insulator and said diode substrate is a semiconductor.
Claim 13
Dependent Claim
17 words
A device as claimed in claim 11 wherein said semi-insulator is GaAs and said semiconductor is Si.
Claim 14
Dependent Claim
15 words
A device as claimed in claim 1 wherein said resonator also comprises an impedance transformer.
Claim 15
Dependent Claim
18 words
A device as claimed in claim 1 wherein said resonator comprises a pair of coupled microstrip transmission lines.
Claim 16
Dependent Claim
17 words
A device as claimed in claim 14 wherein one of said lines is coupled to said diode.
Claim 17
Dependent Claim
21 words
A device as claimed in claim 15, further comprising a ground plane conductor coupled to an end of the remaining line.
Claim 18
Dependent Claim
15 words
A device as claimed in claim 14 wherein said lines also comprise an impedance transformer.
Claim 19
Dependent Claim
23 words
A device as claimed in claim 1, further comprising a laser optically coupled to the I conductivity type region of said PIN diode.
References Cited (Backward Citations)
US3229106A
Cited
US4403239A
Cited
US4297661A
Cited
US4583064A
Cited
US4743874A
Cited
US4764933A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-02-14 | 1992-08-15 | 1993-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-14 | 1996-08-15 | 1997-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-14 | 2000-08-15 | 2001-02-14 | $7700.00 | Window Closed / Lapsed |