Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure

Claim 1

A method for forming a positive type resist pattern on a substrate by use of a dually photosensitive composition negatively photosensitive under a first condition of exposure to light and positively photosensitive under a second condition of exposure to light which comprises the steps of: (a) forming a layer of the dually photosensitive composition in admixture with a novolac type phenolic resin on the substrate; (b) subjecting the layer of the dually photosensitive composition to a pattern-wise exposure to light under the second condition of exposure; (c) developing the layer of the dually photosensitive composition with an organic or inorganic alkaline solution to form a positive type resist pattern; (d) subjecting the developed layer of the dually photosensitive composition to a whole-surface exposure to light under the first condition of exposure; wherein the dually photosensitive composition comprises an admixture of an o-naphthoquinone diazide and novolac type phenolic resin based photoresist material of the positive type, and from 5 to 50 parts by weight per 100 parts by weight of the o-naphthoquinone diazide-based photoresist material on a solids basis, of a bis azide compound cross linkable by irradiation with far ultraviolet light in the wavelength region of 200 to 330nm represented by the general formula: ##STR2## in which A is a divalent atom or group selected from the class consisting of an oxygen atom, a sulfur atom, a disulfide linkage S 2 , a sulfone linkage SO 2 and a methylene group CH 2 , and X is a hydrogen atom or a chlorine atom; and wherein the step (b) comprises subjecting layer of a dually photosensitive composition to pattern-wise exposure with ultraviolet light, and the step (d) comprises subjecting the layer of dually photosensitive composition to whole-surface exposure with far ultraviolet light, after developing, to produce a good heat and solvent resistant patterned resist.

Claim 2

A method for forming a positive type resist pattern on a substrate by use of a dually photosensitive composition negatively photosensitive under a first condition of exposure to light and positively photosensitive under a second condition of exposure to light which comprises the steps of: (a) forming a layer of the dually photosensitive composition in admixture with a novolac type phenolic resin on the substrate; (b) subjecting the layer of the dually photosensitive composition to a pattern-wise exposure to light under the second condition of exposure; (c) developing the layer of the dually photosensitive composition with an organic or inorganic alkaline solution to form a positive type resist pattern; (d) subjecting the developed layer of the dually photosensitive composition to a whole-surface exposure to light under the first condition of exposure; wherein the dually photosensitive composition comprises an admixture of an o-naphthoquinone diazide and novolac type phenolic resin based photoresist material of the positive type, and from 5 to 50 parts by weight per 100 parts by weight of the o-naphthoquinone diazide-based photoresist material on a solids basis, of a bis azide compound cross linkable by irradiation with far ultraviolet light in the wavelength region of 200 to 330nm represented by the general formula: ##STR2## in which A is a divalent atom or group selected from the class consisting of an oxygen atom, a sulfur atom, a disulfide linkage S 2 , a sulfone linkage SO 2 and a methylene group CH 2 , and X is a hydrogen atom or a chlorine atom; and wherein the step (b) comprises subjecting layer of a dually photosensitive composition to pattern-wise exposure with ultraviolet light, and the step (d) comprises subjecting the layer of dually photosensitive composition to whole-surface exposure with far ultraviolet light, after developing, to produce a good heat and solvent resistant patterned resist.