US4469778A
Expired / Lapsed
US
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Pattern formation method utilizing deep UV radiation and bisazide composition
Assignee: Hitachi Ltd
•
Filing: 1983-04-14
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Granted: 1984-09-04
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Expires: 2003-04-14
Abstract
Abstract Disclosed is a pattern formation method comprising exposing a photosensitive composition comprising a bisazide compound represented by the following general formula: ##STR1## wherein A stands for an atom or atomic group selected from O, S, CH 2 , CH 2 CH 2 , SO 2 and S 2 , X stands for an atom or atomic group selected from H and N 3 , and when X is H, Z is a group of N 3 and when X is N 3 , Z is an atom of H or Cl, and a polymeric compound to deep UV rays, to form fine patterns.
Inventors
- 👤 Takao Iwayanagi
- 👤 Takahiro Kohashi
- 👤 Saburo Nonogaki
- 👤 Yoshio Hatano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:06
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/008; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/128
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
195 words
A pattern formation method comprising the first step of forming a film of a photosensitive composition comprising a bisazide compound, the bisazide compound being an organic solvent soluble compound, represented by the following general formula: ##STR3## wherein A stands for an atom or atomic group selected from O, S, CH 2 CH 2 , SO 2 and S 2 , X stands for an atom or atomic group selected from H and N 3 , and when X is H, Z is a group of N 3 and when X is N 3 , Z is an atom of H or C, and a polymeric compound, crosslinkable with a photochemical reaction product of said bisazide compound on a substrate, said polymeric compound being an organic solvent soluble polymeric compound, the amount of the bisazide compound used being sufficient for the photochemical reaction product thereof to cross-link the polymeric compound, the second step of exposing said film only to deep UV rays, of a wavelength of 200 to 320 nm, having a predetermined pattern and the third step of removing the unexposed area from said film by development using a solvent for the unexposed photosensitive composition.
Claim 2
Dependent Claim
195 words
A pattern formation method comprising the first step of forming a film of a photosensitive composition comprising a bisazide compound, the bisazide compound being an organic solvent soluble compound, represented by the following general formula: ##STR3## wherein A stands for an atom or atomic group selected from O, S, CH 2 CH 2 , SO 2 and S 2 , X stands for an atom or atomic group selected from H and N 3 , and when X is H, Z is a group of N 3 and when X is N 3 , Z is an atom of H or C, and a polymeric compound, crosslinkable with a photochemical reaction product of said bisazide compound on a substrate, said polymeric compound being an organic solvent soluble polymeric compound, the amount of the bisazide compound used being sufficient for the photochemical reaction product thereof to cross-link the polymeric compound, the second step of exposing said film only to deep UV rays, of a wavelength of 200 to 320 nm, having a predetermined pattern and the third step of removing the unexposed area from said film by development using a solvent for the unexposed photosensitive composition.
Claim 3
Dependent Claim
48 words
A pattern formation method according to claim 1 wherein the polymeric compound is at least one member selected from the group consisting of natural rubber, cyclized natural rubber, polybutadiene, polyisoprene, cyclized polybutadiene, cyclized polyisoprene, polychloroprene, styrene-butadiene rubber, nitrile rubber, polystyrene, nylon, novolak resin, poly(vinyl phenol) and poly(vinyl butyral).
Claim 4
Dependent Claim
25 words
A pattern formation method according to claim 1 wherein exposure of the film to deep UV rays is carried out in an inert gas atmosphere.
Claim 5
Dependent Claim
45 words
A pattern formation method according to claim 1 wherein the bisazide compound is at least one member selected from the group consisting of 4,4'-diazidodiphenyl sulfone and 3,3'-diazidodiphenyl sulfone and exposure of the film to deep UV rays is carried out in an oxygen gas-containing atmosphere.
Claim 6
Dependent Claim
30 words
A pattern formation method according to claim 1 wherein the deep UV rays are those reflected from a cold mirror transmitting rays having a wavelength longer than a predetermined wavelength.
Claim 7
Dependent Claim
16 words
A pattern formation method according to claim 1 wherein A in the general formula is O.
Claim 8
Dependent Claim
15 words
A pattern formation method according to claim 6 wherein the bisazide compound is 4,4'-diazidodiphenyl ether.
Claim 9
Dependent Claim
21 words
A pattern formation method according to claim 6 wherein the deep UV rays have a wavelength of 200 to 300 nm.
Claim 10
Dependent Claim
16 words
A pattern formation method according to claim 1 wherein A in the general formula is S.
Claim 11
Dependent Claim
15 words
A pattern formation method according to claim 9 wherein the bisazide compound is 4,4'-diazidodiphenyl sulfide.
Claim 12
Dependent Claim
21 words
A pattern formation method according to claim 10 wherein the deep UV rays have a wavelength of 200 to 300 nm.
Claim 13
Dependent Claim
20 words
A pattern formation method according to claim 1 wherein A in the general formula is CH 2 CH 2 .
Claim 14
Dependent Claim
14 words
A pattern formation method according to claim 12 wherein the bisazide compound is 4,4'-diazidobibenzyl.
Claim 15
Dependent Claim
21 words
A pattern formation method according to claim 12 wherein the deep UV rays have a wavelength of 200 to 300 nm.
Claim 16
Dependent Claim
18 words
A pattern formation method according to claim 1 wherein A in the general formula is SO 2 .
Claim 17
Dependent Claim
28 words
A pattern formation method according to claim 15 wherein the bisazide compound is at least one member selected from the group consisting of 4,4'-diazidodiphenyl sulfone and 3,3'-diazidodiphenyl sulfone.
Claim 18
Dependent Claim
25 words
A pattern formation method according to claim 15 wherein exposure of the film to deep UV rays is carried out in an oxygen gas-containing atmosphere.
Claim 19
Dependent Claim
21 words
A pattern formation method according to claim 15 wherein the deep UV rays have a wavelength of 200 to 300 nm.
Claim 20
Dependent Claim
18 words
A pattern formation method according to claim 1 wherein A in the general formula is S 2 .
Claim 21
Dependent Claim
15 words
A pattern formation method according to claim 19 wherein the bisazide compound is 4,4'-diazidodiphenyl disulfide.
Claim 22
Dependent Claim
21 words
A pattern formation method according to claim 19 wherein the deep UV rays have a wavelength of 200 to 300 nm.
Claim 23
Dependent Claim
66 words
A pattern formation method according to claim 1 wherein A stands for an atom or atomic group selected from S and SO 2 , and the polymeric compound is at least one member selected from the group consisting of natural rubber, cyclized natural rubber, polybutadiene, polyisoprene, cyclized polybutadiene, cyclized polyisoprene, polychloroprene, styrene-butadiene rubber, nitrile rubber, polystyrene, nylon, novolak resin, poly (vinyl phenol) and poly (vinyl butyral).
Claim 24
Dependent Claim
21 words
A pattern formation method according to claim 22, wherein said deep UV rays have a wavelength of 200 to 300 nm.
Claim 25
Dependent Claim
22 words
A pattern formation method according to claim 1, wherein said development is performed using an organic solvent for the unexposed photosensitive composition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-04 | 1988-03-05 | 1988-09-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-04 | 1992-03-05 | 1992-09-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-04 | 1996-03-05 | 1996-09-04 | $7700.00 | Window Closed / Lapsed |