US4796072A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state imaging device with potential barriers between pixels
Assignee: Fujifilm Holdings Corp
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Filing: 1986-11-19
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Granted: 1989-01-03
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Expires: 2006-11-19
Abstract
Abstract A solid-state imaging device comprising an MOS scanning circuit over which is formed an array of photoconductive imaging elements. The imaging elements are separated by doped regions which create potential barriers against the movement of carriers of the photoconductive regions.
Inventors
- 👤 Akio Higashi
- 👤 Haruji Shinada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:15
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/192
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
88 words
A solid-state imaging device comprising: a semiconductor substrate having formed therein a scanning circuit for a plurality of photoconductive picture elements and including at least one semiconductor gate for each of said picture elements; and a photoconductive film unit disposed on said semiconductor substrate in an area of said scanning circuit and including said plurality of photoconductive picture elements having a type of semiconductive carriers, wherein said photoconductive film unit has, at positions separating said picture elements, impurity-doped regions, said impurity-doped regions forming potential barriers for said carriers.
Claim 2
Dependent Claim
88 words
A solid-state imaging device comprising: a semiconductor substrate having formed therein a scanning circuit for a plurality of photoconductive picture elements and including at least one semiconductor gate for each of said picture elements; and a photoconductive film unit disposed on said semiconductor substrate in an area of said scanning circuit and including said plurality of photoconductive picture elements having a type of semiconductive carriers, wherein said photoconductive film unit has, at positions separating said picture elements, impurity-doped regions, said impurity-doped regions forming potential barriers for said carriers.
Claim 3
Dependent Claim
31 words
A solid-state imaging device according to claim 1, wherein said photoconductive film unit further comprises grooves at said positions separating said picture elements, said impurity-doped regions being formed in said groove.
Claim 4
Dependent Claim
29 words
A solid-state imaging device according to claim 1, wherein said impurity-doped regions are of a first conductivity type and said photoconductive elements each comprise a photoconductive region being intrinsic.
Claim 5
Dependent Claim
29 words
A solid-state imaging device according to claim 2, wherein said impurity-doped regions are of a first conductivity type and said photoconductive elements each comprise a photoconductive region being intrinsic.
Claim 6
Dependent Claim
15 words
A solid-state imaging device according to claim 3, wherein said impurity-doped regions contain implanted ions.
Claim 7
Dependent Claim
15 words
A solid-state imaging device according to claim 4, wherein said impurity-doped regions contain implanted ions.
Claim 8
Dependent Claim
25 words
A solid-state imaging device according to claim 5, wherein said scanning circuit comprises a plurality of MOS transistors and said photoconductive regions comprise amorphous silicon.
Claim 9
Dependent Claim
25 words
A solid-state imaging device according to claim 6, wherein said scanning circuit comprises a plurality of MOS transistors and said photoconductive regions comprise amorphous silicon.
Claim 10
Dependent Claim
49 words
A solid-state imaging device according to claim 1, wherein said impurity-doped regions are of a first conductivity type and said photoconductive elements each comprise a photoconductive region being of a second conductivity type of a concentration substantially less than that of said first conductivity type in said impurity-doped regions.
Claim 11
Dependent Claim
15 words
A solid-state imaging device according to claim 9, wherein said impurity-doped regions contain implanted ions.
Claim 12
Dependent Claim
25 words
A solid-state imaging device according to claim 10, wherein said scanning circuit comprises a plurality of MOS transistors and said photoconductive regions comprise amorphous silicon.
Claim 13
Dependent Claim
49 words
A solid-state imaging device according to claim 2, wherein said impurity-doped regions are of a first conductivity type and said photoconductive elements each comprise a photoconductive region being of a second conductivity type of a concentration substantially less than that of said first conductivity type in said impurity-doped regions.
Claim 14
Dependent Claim
15 words
A solid-state imaging device according to claim 12, wherein said impurity-doped regions contain implanted ions.
Claim 15
Dependent Claim
25 words
A solid-state imaging device according to claim 13, wherein said scanning circuit comprises a plurality of MOS transistors and said photoconductive regions comprise amorphous silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-03 | 1992-07-04 | 1993-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-03 | 1996-07-04 | 1997-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-03 | 2000-07-04 | 2001-01-03 | $7700.00 | Window Closed / Lapsed |