US4739384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state imaging device with polycrystalline film
Assignee: Fujifilm Holdings Corp
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Filing: 1985-10-22
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Granted: 1988-04-19
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Expires: 2005-10-22
Abstract
Abstract A solid-state imaging device in which the possibility of defect formation in a photoconductive layer is substantially eliminated by the use of a multi-layered structure. A photoconductive film unit and a transparent electrode are formed in that order on a semiconductor substrate in which is formed a scanning circuit composed of a plurality of picture elements defined by respective electrodes on the semiconductor substrate and the transparent electrode. The photoconductive film unit is composed of a polycrystalline silicon film and an amorphous silicon film that are disposed in that order on the semiconductor substrate.
Inventors
- 👤 Akio Higashi
- 👤 Haruji Shinada
- 👤 Kazuhiro Kawajiri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:11
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
121 words
A solid-state imaging device comprising: a semiconductor substrate; a scanning circuit comprising a plurality of picture elements formed on a surface of said substrate, each of said picture elements comprising a light-sensing electrode and semiconductor switching means coupled to said light-sensing electrode; a polycrystalline silicon film extending continuously over said light-sensing electrodes of said scanning circuit, said polycrystalline film having a resistance in a direction parallel to said surface of said substrate sufficiently high as to prevent crosstalk between adjacent ones of said picture elements; an amorphous silicon film formed over said polycrystalline silicon film, said polycrystalline film being sufficiently thick to prevent formation of defects in said amorphous silicon film; and a transparent electrode formed over said amorphous silicon film.
Claim 2
Dependent Claim
121 words
A solid-state imaging device comprising: a semiconductor substrate; a scanning circuit comprising a plurality of picture elements formed on a surface of said substrate, each of said picture elements comprising a light-sensing electrode and semiconductor switching means coupled to said light-sensing electrode; a polycrystalline silicon film extending continuously over said light-sensing electrodes of said scanning circuit, said polycrystalline film having a resistance in a direction parallel to said surface of said substrate sufficiently high as to prevent crosstalk between adjacent ones of said picture elements; an amorphous silicon film formed over said polycrystalline silicon film, said polycrystalline film being sufficiently thick to prevent formation of defects in said amorphous silicon film; and a transparent electrode formed over said amorphous silicon film.
Claim 3
Dependent Claim
21 words
The solid-state imaging device according to claim 1, wherein said polycrystalline silicon film has a thickness of 0.1 to 0.5 microns.
Claim 4
Dependent Claim
49 words
The solid-state imaging device according to claim 1, wherein said polycrystalline silicon film has a conductivity type and a thickness of 0.1 to 5 microns, and further comprising channel stopper regions of a different conductivity type from said polycrystalline film formed in said polycrystalline film between said picture elements.
Claim 5
Dependent Claim
34 words
The solid-state imaging device according to claim 1, wherein said polycrystalline silicon film has a thickness of 0.1 to 0.5 microns, and a groove is formed in said polycrystalline silicon film between picture elements.
Claim 6
Dependent Claim
17 words
The solid-state imaging device according to claim 4, wherein said trench is filled with an insulating material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |