US4794432A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mosfet structure with substrate coupled source
Assignee: Fairchild Semiconductor Corp
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Filing: 1987-01-27
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Granted: 1988-12-27
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Expires: 2007-01-27
Abstract
Abstract A disclosed MOSFET cell has a source region formed at the top surface of a semiconductor substrate. The top surface source region is electrically coupled to a conductive region at a bottom portion of the substrate by means of a vertical conduit which projects through the substrate from the top surface to the conductive region. A current exchanger is provided extending over the top surface of the substrate and coupling a top surface portion of the vertical conduit to the source region. The current exchanger makes ohmic contact with the source region and with the conduit region and shorts the two regions together such that majority carrier current of the conduit region will be "converted" into majority carrier current of the source region and electrical continuity between the source region and the conductive region of the substrate is established. Respective source regions of multiple MOSFET cells may be interconnected in accordance with this method through a longitudinally extending conductive layer which is typically formed near the bottom surface of semiconductor substrates.
Inventors
- 👤 Hamza Yilmaz
- 👤 King Owyang
- 👤 Robert G. Hodgins
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/65; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/378; H10D62/393; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/254; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/514; H10D64/516
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
178 words
A lateral MOSFET cell structure comprising: a substrate having a top surface and a bottom surface; a first layer of first conductivity type across the bottom surface and a relatively lightly doped epitaxial layer of second conductivity type disposed on the first layer and extending to the top surface; a source region of second conductivity type, a channel region of first conductivity type, and a drain region of second conductivity type, laterally disposed in said order at the top surface of the substrate, said source and drain regions being more heavily doped than said epitaxial layer; a conduit region of first conductivity type, contiguous with the channel region, projecting from the top surface of the substrate, through the epitaxial layer, to form a generally vertical conduit communicating between the top surface of the substrate and portions of the substrate below the epitaxial layer; a source electrode on the bottom surface, in contact with the conduit region; and carrier conversion means linking a top surface portion of said source region to a top surface portion of said conduit region.
Claim 2
Dependent Claim
178 words
A lateral MOSFET cell structure comprising: a substrate having a top surface and a bottom surface; a first layer of first conductivity type across the bottom surface and a relatively lightly doped epitaxial layer of second conductivity type disposed on the first layer and extending to the top surface; a source region of second conductivity type, a channel region of first conductivity type, and a drain region of second conductivity type, laterally disposed in said order at the top surface of the substrate, said source and drain regions being more heavily doped than said epitaxial layer; a conduit region of first conductivity type, contiguous with the channel region, projecting from the top surface of the substrate, through the epitaxial layer, to form a generally vertical conduit communicating between the top surface of the substrate and portions of the substrate below the epitaxial layer; a source electrode on the bottom surface, in contact with the conduit region; and carrier conversion means linking a top surface portion of said source region to a top surface portion of said conduit region.
Claim 3
Dependent Claim
28 words
A MOSFET cell structure according to claim 1 further comprising an insulating layer disposed over said carrier conversion means; and a metallization layer disposed over the insulating layer.
Claim 4
Dependent Claim
37 words
A MOSFET cell structure according to claim 2 wherein said insulating layer extends over said channel region, and wherein the MOSFET cell structure further comprises an insulated gate supported above said channel region by said insulating layer.
Claim 5
Dependent Claim
21 words
A MOSFET cell structure according to claim 2 wherein said insulating layer includes a Si 3 N 4 /SiO 2 sublayer.
Claim 6
Dependent Claim
18 words
A MOSFET cell structure according to claim 1 wherein said carrier conversion means includes a refractory metal layer.
Claim 7
Dependent Claim
24 words
A MOSFET cell structure according to claim 1 wherein said channel region extends from said conduit region to the top surface of said substrate.
Claim 8
Dependent Claim
50 words
A MOSFET cell structure according to claim 1 wherein said source, drain, channel, and conduit regions are one or the second type of p-type and n-type semiconductors, said source region and drain region being of said one type, and said channel region and conduit region being of the second type.
Claim 9
Dependent Claim
34 words
A MOSFET cell structure according to claim 7 wherein said epitaxial layer is of the same semiconductor type as said conduit region and said conduit region is heavily doped relative to said epitaxial region.
Claim 10
Dependent Claim
62 words
A plurality of MOSFET cell structures according to claim 1 integrated on a single substrate that includes a conductive bottom surface, wherein respective conduit regions of each MOSFET cell structure communicate with the conductive bottom surface of the substrate such that respective source regions of said plurality of MOSFET cell structures are electrically interconnected through the conductive bottom surface of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-27 | 1992-06-27 | 1992-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-27 | 1996-06-27 | 1996-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-27 | 2000-06-27 | 2000-12-27 | $7700.00 | Window Closed / Lapsed |