US4794277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit under-voltage lockout
Assignee: Texas Instruments Inc
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Filing: 1987-08-10
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Granted: 1988-12-27
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Expires: 2007-08-10
Abstract
Abstract A low voltage lockout circuit preferably of integrated circuit form to provide a lockout signal when an internally generated reference voltage is insufficient. According to the present invention, a reference voltage is produced by passing a constant current through a reference voltage element, such as a zener diode. Insufficient reference voltage caused by a low power supply input voltage is detected by sensing the saturation of the constant current source. The present invention indicates the precise point of saturation of the constant current source and produces a lockout signal for use by other portions of the integrated circuit, or external devices. The lockout signal also indicates the minimum usable power supply input voltage. The constant current source and the saturation detection element are combined and implemented within a single semiconductor structure. The semiconductor structure includes a transistor having a second collector, wherein the minority carriers are re-emitted from the first collector upon saturation of the first collector, and received by the second collector; the resulting current produces the lockout signal.
Inventors
- 👤 Varnum S. Holland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:46
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/18
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
63 words
Voltage reference apparatus for providing a regulated voltage signal and a lockout signal, comprising: means for providing a constant current including an integrated circuit having a transistor and means for indicating the saturation of said constant current integrated circuit transistor producing said lockout signal; and means for providing a reference voltage connected to receive the constant current produced by said constant current source.
Claim 2
Dependent Claim
63 words
Voltage reference apparatus for providing a regulated voltage signal and a lockout signal, comprising: means for providing a constant current including an integrated circuit having a transistor and means for indicating the saturation of said constant current integrated circuit transistor producing said lockout signal; and means for providing a reference voltage connected to receive the constant current produced by said constant current source.
Claim 3
Dependent Claim
23 words
The voltage reference apparatus of claim 1, further including: a buffer amplifier receiving said regulated voltage signal, producing a buffered regulated voltage signal.
Claim 4
Dependent Claim
16 words
The voltage reference apparatus of claim 2, wherein said buffer amplifier is an emitter follower amplifier.
Claim 5
Dependent Claim
26 words
The voltage reference apparatus of claim 2, wherein said means for providing a reference voltage receives a feedback signal from the output of said buffer amplifier.
Claim 6
Dependent Claim
33 words
The voltage reference apparatus of claim 1, wherein said means for providing a constant current comprises a current mirror, further including a second transistor connected to establish the magnitude of the constant current.
Claim 7
Dependent Claim
22 words
The voltage reference apparatus of claim 1, further including: a means for receiving the lockout signal and producing a buffered lockout signal.
Claim 8
Dependent Claim
20 words
The voltage reference apparatus of claim 1, wherein said means for indicating comprises a constant current transistor second collector region.
Claim 9
Dependent Claim
225 words
A voltage reference circuit having a substrate of a first conductivity type to detect a semiconductor saturation condition providing a regulated voltage and a lockout signal, comprising: an epitaxially grown base layer of a second conductivity type; a plurality of conductive regions disposed on the surface of said epitaxially grown base layer in a predetermined order, wherein said plurality of conductive regions comprises: an emitter of a first conductivity type providing a source of charge; a first collector of a first conductivity type providing a current source, disposed adjacent said emitter junction to receive said charge therefrom, and having at least a portion of said base layer interposed between said emitter and first collector; a second collector of the same conductivity type as the first collector, disposed adjacent said first collector on said base layer having at least a portion of said base layer interposed between said first and second collectors, wherein said first collector receiving said charge emits at least a portion of said charge when in a saturated condition, said portion being received by said second collector, providing a saturation output signal therefrom indicating the condition of the second collector; and a voltage reference element connected to said current source providing a selected reference voltage when said current source is operable, said second collector current indicating said current source is not fully operable.
Claim 10
Dependent Claim
225 words
A voltage reference circuit having a substrate of a first conductivity type to detect a semiconductor saturation condition providing a regulated voltage and a lockout signal, comprising: an epitaxially grown base layer of a second conductivity type; a plurality of conductive regions disposed on the surface of said epitaxially grown base layer in a predetermined order, wherein said plurality of conductive regions comprises: an emitter of a first conductivity type providing a source of charge; a first collector of a first conductivity type providing a current source, disposed adjacent said emitter junction to receive said charge therefrom, and having at least a portion of said base layer interposed between said emitter and first collector; a second collector of the same conductivity type as the first collector, disposed adjacent said first collector on said base layer having at least a portion of said base layer interposed between said first and second collectors, wherein said first collector receiving said charge emits at least a portion of said charge when in a saturated condition, said portion being received by said second collector, providing a saturation output signal therefrom indicating the condition of the second collector; and a voltage reference element connected to said current source providing a selected reference voltage when said current source is operable, said second collector current indicating said current source is not fully operable.
Claim 11
Dependent Claim
15 words
The integrated circuit of claim 1, further including a current-mirror circuit including said current source.
Claim 12
Dependent Claim
22 words
The integrated circuit of claim 1, wherein said reference element comprises one of a zener diode and a band gap reference element.
References Cited (Backward Citations)
US3890634A
Cited
US4286177A
Cited
US3878551A
Cited
US3820007A
Cited
US4328509A
Cited
US3987477A
Cited
US4035664A
Cited
US4085411A
Cited
US4158783A
Cited
US4146903A
Cited
US4345166A
Cited
US4336489A
Cited
US4390829A
Cited
US4396883A
Cited
JPS58132816A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-27 | 1992-06-27 | 1992-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-27 | 1996-06-27 | 1996-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-27 | 2000-06-27 | 2000-12-27 | $7700.00 | Window Closed / Lapsed |