Beta compensated integrated current mirror

Claim 1

A lateral PNP type transistor having a beta of approximately 15 forming a beta compensated integrated current mirror comprising: a. a base composed of semiconductor material; b. an emitter formed on said base and in connection therewith; c. first and second collector portions formed on said base in spaced relation from said emitter and each other and in partially encircling relationship to said emitter, said first and second collector portions each defining an inner edge adjacent said emitter with the inner edge of said first collector portion encircling approximately 163° of the emitter and the inner edge of said second collector portion encircling approximately 145° of the emitter, the amount of current from said emitter flowing in each of said collector portions being dependent upon the amount of said emitter encircled by the inner edges of each of said collector portions; d. said base and said second collector portion being electrically connected so that the current flowing in said base and in said second collector portion forms a single current; and e. the amount of said emitter encircled by each of the inner edges of said first and second collector portions being formed so that the current flowing in said first collector portion is approximately equal to the single current.