US3879745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: US Philips Corp
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Filing: 1974-02-19
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Granted: 1975-04-22
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Expires: 1994-02-19
Abstract
Abstract A semiconductor device, particularly an integrated semiconductor circuit, in which in a region (island) of a given conductivity type a group of semiconductor circuit elements is provided having a common zone. According to the invention, the region comprises a highly doped zone of the same conductivity type, which within the semiconductor body substantially entirely surrounds the group of circuit elements and is not contacted or is contacted only locally. Due to the presence of said highly doped zone, the parts of the common zone belonging to the circuit elements are kept at the same potential. Application in particular in lateral transistors to ensure a fixed ratio of the emitter current.
Inventors
- 👤 Poothathamby Tharmaratnam
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 15:39
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/63; H10W; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
171 words
A semiconductor device comprising: a. a semiconductor body comprising a first region of a first conductivity type adjoining a surface of said body; b. a plurality of lateral transistors disposed in said first region and individually comprising surface emitter and collector zones of a second conductivity type and further comprising respective base zones of said first conductivity type, said emitter, base, and collector zones being disposed in said first region; c. a highly doped zone of said first conductivity type disposed in said first region and having a higher conductance than the part of said first region located between said lateral transistors and substantially entirely surrounding in said body each of said plurality of lateral transistors, said highly doped zone comprising a part at least substantially adjoining said surface at areas of said surface that surround said lateral transistors and said highly doped zone electrically interconnecting said base zones; and d. means for electrically interconnecting said emitter zones, whereby the emitter currents of said lateral transistors have a substantially fixed ratio.
Claim 2
Dependent Claim
171 words
A semiconductor device comprising: a. a semiconductor body comprising a first region of a first conductivity type adjoining a surface of said body; b. a plurality of lateral transistors disposed in said first region and individually comprising surface emitter and collector zones of a second conductivity type and further comprising respective base zones of said first conductivity type, said emitter, base, and collector zones being disposed in said first region; c. a highly doped zone of said first conductivity type disposed in said first region and having a higher conductance than the part of said first region located between said lateral transistors and substantially entirely surrounding in said body each of said plurality of lateral transistors, said highly doped zone comprising a part at least substantially adjoining said surface at areas of said surface that surround said lateral transistors and said highly doped zone electrically interconnecting said base zones; and d. means for electrically interconnecting said emitter zones, whereby the emitter currents of said lateral transistors have a substantially fixed ratio.
Claim 3
Dependent Claim
149 words
A SEMICONDUCTOR DEVICE COMPRISING: A. A SEMICONDUCTOR BODY COMPRISING A FIRST REGION OF A FIRST CONDUCTIVITY TYPE ADJOINING A SURFACE OF SAID BODY; B. A PLURALITY OF LATERAL TRANSISTORS DISPOSED IN SAID FIRST REGION AND INDIVIDUALLY COMPRISING SURFACE EMITTER AND COLLECTOR ZONES OF A SECOND CONDUCTIVITY TYPE AND FURTHER COMPRISING RESPECTIVE BASE ZONES OF SAID FIRST CONDUCTIVITY TYPE, SAID EMITTER, BASE, AND COLLECTOR ZONES BEING DISPOSED IN SAID FIRST REGION; C. A HIGLY DOPED ZONE OF SAID FIRST CONDUCTIVITY TYPE DISPOSED IN SAID FIRST REGION LOCATED BETWEEN SAID THAN THE PART OF SAID FIRST REGION LOCATED BETWEEN SAID LATERAL TRANSISTORS AND SUBSTANTIALLY ENTIRELY SURROUNDING IN SAID BODY EACH OF SAID PLURLITY OF LATERAL TRANSISTORS, SAID HIGHLY DOPED ZONE COMPRISING A PART OF AT LEAST SUBSTANTIALLY ADJOINING SAID SURFACE AT AREAS OF SAID SURFACE THAT SURROUND SAID LATERAL TRANSISTORS AND SAID HIGHLY DOPED ZONE ELECTRICALLY INTERCONNECTING SAID BASE ZONES; AND
Claim 4
Dependent Claim
149 words
A SEMICONDUCTOR DEVICE COMPRISING: A. A SEMICONDUCTOR BODY COMPRISING A FIRST REGION OF A FIRST CONDUCTIVITY TYPE ADJOINING A SURFACE OF SAID BODY; B. A PLURALITY OF LATERAL TRANSISTORS DISPOSED IN SAID FIRST REGION AND INDIVIDUALLY COMPRISING SURFACE EMITTER AND COLLECTOR ZONES OF A SECOND CONDUCTIVITY TYPE AND FURTHER COMPRISING RESPECTIVE BASE ZONES OF SAID FIRST CONDUCTIVITY TYPE, SAID EMITTER, BASE, AND COLLECTOR ZONES BEING DISPOSED IN SAID FIRST REGION; C. A HIGLY DOPED ZONE OF SAID FIRST CONDUCTIVITY TYPE DISPOSED IN SAID FIRST REGION LOCATED BETWEEN SAID THAN THE PART OF SAID FIRST REGION LOCATED BETWEEN SAID LATERAL TRANSISTORS AND SUBSTANTIALLY ENTIRELY SURROUNDING IN SAID BODY EACH OF SAID PLURLITY OF LATERAL TRANSISTORS, SAID HIGHLY DOPED ZONE COMPRISING A PART OF AT LEAST SUBSTANTIALLY ADJOINING SAID SURFACE AT AREAS OF SAID SURFACE THAT SURROUND SAID LATERAL TRANSISTORS AND SAID HIGHLY DOPED ZONE ELECTRICALLY INTERCONNECTING SAID BASE ZONES; AND
Claim 5
Dependent Claim
58 words
A semiconductor device as defined in claim 1 further comprising a substrate, said first region comprising an epitaxial layer disposed on said substrate, and said highly doped zone comprising both a buried layer disposed between said epitaxial layer and said substrate and a part at least substantially adjoining said surface and at least substantially adjoining said buried layer.
Claim 6
Dependent Claim
43 words
A semiconductor device as defined in claim 2 wherein said highly doped zone further comprises at least one highly doped partition region disposed between adjacent ones of said lateral transistors, said partition region at least substantIally adjoining said buried layer and said surface.
Claim 7
Dependent Claim
35 words
A semiconductor device as defined in claim 1 wherein said first region is separated from the remaining part of said semiconductor body by a p-n junction that intersects said semiconductor body only at said surface.
Claim 8
Dependent Claim
46 words
A semiconductor device as defined in claim 1 further comprising a transistor structure comprising at least two active parts and disposed outside said highly doped zone surrounding said lateral transistors, a portion of said highly doped zone being electrically connected with one of said active parts.
Claim 9
Dependent Claim
16 words
A semiconductor device as defined in claim 5 wherein said transistor structure comprises a transverse transistor.
Claim 10
Dependent Claim
22 words
A semiconductor device as defined in claim 6 wherein said one of said active parts comprises the collector of said transverse transistor.
Claim 11
Dependent Claim
23 words
A semiconductor device as defined in claim 7 wherein said collector comprises a part of said first region of said first conductivity type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-04-21 | 1978-10-21 | 1979-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-04-21 | 1982-10-21 | 1983-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-04-21 | 1986-10-21 | 1987-04-22 | $7700.00 | Window Closed / Lapsed |