Common emitter transistor integrated circuit structure
Abstract
Abstract A planar integrated semiconductor circuit having common emitter transistor elements isolated from each other and from other transistors by the emitter regions which form a PN- or rectifying junction with the body of the semiconductor member in which the integrated circuit is formed. In a semiconductor member or body of one type conductivity, a plurality of emitter regions of opposite type conductivity extend from one planar surface of the body. One or more of the emitter regions each have a plurality of discrete base regions of the one type conductivity extending from said planar surface fully enclosed within the emitter region. Each of the base regions in turn has at least one collector region enclosed within it at the planar surface. The emitter region has a higher majority carrier concentration than the majority carrier concentration within its enclosed base regions. The rectifying junction formed by the opposite conductivity emitter region with the one type conductivity semiconductor body serves to isolate the emitter regions from each other.
Inventors
- 👤 Paul P Castrucci
- 👤 Edward G Grochowski
- 👤 William D North
- 👤 Thomas L Palfi
Bibliographic Details
Claims Analysis
Total Claims: 3References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-03-07 | 1975-09-06 | 1976-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-03-07 | 1979-09-06 | 1980-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-03-07 | 1983-09-06 | 1984-03-07 | $7700.00 | Window Closed / Lapsed |