US4789786A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of projecting photoelectron image
Assignee: Fujitsu Ltd
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Filing: 1988-01-15
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Granted: 1988-12-06
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Expires: 2008-01-15
Abstract
Abstract A method for projecting a photelectron image includes providing a mask substrate, and selectively contacting a layer which lowers the work function of the mask substrate thereto. Photoelectrons are emitted from the contacted portion.
Inventors
- 👤 Hiroshi Yasuda
- 👤 Ichiro Honjo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:16
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; H01J37/3175; B; B82; B82Y; B82Y10/00; B82Y40/00; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2037; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/3175; H01J2237/31777; H01J2237/31779
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
144 words
A method for projecting a photoelectron image comprising the steps of: (a) providing a mask substrate; (b) selectively forming a patterned layer on the mask substrate so as to define two types of areas including an exposed portion of the mask substrate; (c) forming a metal layer selected from the group consisting of Cs, Ba and Cs treated --Sb, --Te and --Ag 2 O on the exposed portion of the mask substrate and the patterned layer in order to lower the work function of the two types of areas in a vacuum, the two types of areas having different quantum efficiencies; (d) irradiating the surface of the metal layer formed in said step (c) to cause photoelectrons to be emitted from one side therefrom, while applying an electric field and a magnetic field; and (e) projecting a photoelectron image based on the emitted photoelectrons.
Claim 2
Independent Claim
144 words
A method for projecting a photoelectron image comprising the steps of: (a) providing a mask substrate; (b) selectively forming a patterned layer on the mask substrate so as to define two types of areas including an exposed portion of the mask substrate; (c) forming a metal layer selected from the group consisting of Cs, Ba and Cs treated --Sb, --Te and --Ag 2 O on the exposed portion of the mask substrate and the patterned layer in order to lower the work function of the two types of areas in a vacuum, the two types of areas having different quantum efficiencies; (d) irradiating the surface of the metal layer formed in said step (c) to cause photoelectrons to be emitted from one side therefrom, while applying an electric field and a magnetic field; and (e) projecting a photoelectron image based on the emitted photoelectrons.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein the mask substrate is selected from the group consisting of GaAs, GaP, quartz, and sapphire.
Claim 4
Dependent Claim
26 words
A method according to claim 2, wherein the patterned metal is selected from the group consisting of Pt, Cr, W, Mo, Ta, Au, Ag, and Ti.
Claim 5
Dependent Claim
25 words
A method according to claim 1, wherein said step of irradiating with light is carried out from the photoelectron emitting side of the metal layer.
Claim 6
Independent Claim
134 words
A method for projecting a photoelectron image comprising the steps of: (a) providing a mask substrate; (b) forming a patterned metal layer on the mask substrate so that an exposed portion of the mask substrate remains; (c) forming a photoelectron-active layer on the patterned metal layer and the exposed portion of the mask substrate so as to form first and second types of areas having first and second quantum efficiencies, the photoelectron-active layer selected from the group consisting of Cs, Ba and Cs treated --Sb, --Te and --Ag 2 O; (d) irradiating the photoelectron-active layer with visible light so that a larger quantity of photoelectrons is emitted from the first type of area than from the second type of area; and (e) projecting a photoelectron image formed by photoelectrons emitted from the photoelectron-active layer.
Claim 7
Independent Claim
134 words
A method for projecting a photoelectron image comprising the steps of: (a) providing a mask substrate; (b) forming a patterned metal layer on the mask substrate so that an exposed portion of the mask substrate remains; (c) forming a photoelectron-active layer on the patterned metal layer and the exposed portion of the mask substrate so as to form first and second types of areas having first and second quantum efficiencies, the photoelectron-active layer selected from the group consisting of Cs, Ba and Cs treated --Sb, --Te and --Ag 2 O; (d) irradiating the photoelectron-active layer with visible light so that a larger quantity of photoelectrons is emitted from the first type of area than from the second type of area; and (e) projecting a photoelectron image formed by photoelectrons emitted from the photoelectron-active layer.
Claim 8
Dependent Claim
33 words
A method according to claim 5, further comprising the step of applying an electric field and a magnetic field during said irradiating step (d) and performing said irradiating step (d) in a vacuum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-06 | 1992-06-06 | 1992-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-06 | 1996-06-06 | 1996-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-06 | 2000-06-06 | 2000-12-06 | $7700.00 | Window Closed / Lapsed |