US4137458A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron image projection masks
Assignee: US Philips Corp
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Filing: 1977-09-12
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Granted: 1979-01-30
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Expires: 1997-09-12
Abstract
Abstract An electron image projection mask consisting of an optical mask comprising a transparent substrate, bearing an opaque mask pattern disposed on the substrate, a transparent coating extending over the mask pattern and the areas of the substrate exposed through the apertures in the opaque mask pattern, and a metal image extending over the transparent coating. The metal image has a pattern corresponding to the apertures in the opaque mask pattern, the optical density of the metal image being such as to reduce the average light transmission through the apertures in the mask to a value between 25 and 80% of the average light transmission of the apertures in the absence of the metal image. Also, a method of producing the electron image projection mask.
Inventors
- 👤 Hewson N. G. King
- 👤 Julian P. Scott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:21
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/20; H; H01; H01J; H01J37/00; H01J37/30
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
111 words
An electron image projection mask consisting of an optical mask comprising a transparent substrate, an opaque mask pattern disposed on said substrate, a transparent coating extending over said mask pattern and the areas of said substrate exposed through the apertures in said opaque mask pattern, and a metal image extending over said transparent coating and having a pattern corresponding to the apertures in said opaque mask pattern, the optical density of said metal image being such as to reduce the average light transmission through the apertures in the mask to a value between 25 and 80% of the average light transmission of said apertures in the absence of said metal image.
Claim 2
Dependent Claim
111 words
An electron image projection mask consisting of an optical mask comprising a transparent substrate, an opaque mask pattern disposed on said substrate, a transparent coating extending over said mask pattern and the areas of said substrate exposed through the apertures in said opaque mask pattern, and a metal image extending over said transparent coating and having a pattern corresponding to the apertures in said opaque mask pattern, the optical density of said metal image being such as to reduce the average light transmission through the apertures in the mask to a value between 25 and 80% of the average light transmission of said apertures in the absence of said metal image.
Claim 3
Dependent Claim
29 words
An electron image projection mask as in claim 1, wherein said opaque mask pattern consists of chromium, gold, nickel, a nickel-chromium alloy, tantalum, aluminium, chromium sesquioxide or tantalum oxide.
Claim 4
Dependent Claim
192 words
A method of making the electron image projection mask recited in claim 1, said method comprising the steps of providing an opaque mask pattern on a transparent substrate, forming a transparent coating extending over said opaque mask pattern and the areas of said substrate exposed through the apertures in said opaque mask pattern, wherein at least a surface layer of the transparent coating contains a photosensitive compound which is capable on exposure to light of forming a light-reaction product which is capable of depositing copper and/or Hg, Pd, Pt, Ag or Au from an aqueous solution of the respective salt, exposing the coating through the opaque mask pattern to light from a diffused light source, contacting the exposed coating with an aqueous solution of a salt of copper and/or Hg, Pd, Pt, Ag or Au so as to form a latent image of nuclei of the relevant metal, and physically developing the latent image so as to reduce the average light transmission through the apertures in the mask to a value of between 25 and 80% of the average light transmission of said apertures in the absence of the said metal image.
Claim 5
Dependent Claim
71 words
A method of manufacturing a semiconductor device, in which method a processing step is effected at an area of a surface of a semiconductor material with the aid of a patterned electron beam generated by means of a photocathode irradiated with light through the electron image projection mask recited in claim 1, wherein the thickness of the transparent coating is the range ± 50% of electrons back-scattered from the semiconductor material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-29 | 1982-07-31 | 1983-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-29 | 1986-07-31 | 1987-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-29 | 1990-07-31 | 1991-01-30 | $7700.00 | Window Closed / Lapsed |