Patent US4789421A successfully refreshed from Google Patents.
US4789421A
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US
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Gallium arsenide superlattice crystal grown on silicon substrate and method of growing such crystal
Assignee: Daido Steel Co Ltd
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Filing: 1985-09-27
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Granted: 1988-12-06
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Expires: 2005-09-27
Abstract
Abstract A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AlP and AlGaP thin films.
Inventors
- 👤 Masayoshi Umeno
- 👤 Shiro Sakai
- 👤 Tetsuo Soga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:14
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/149
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
57 words
A superlattice crystal comprising a Si substrate layer, a GaAs layer and intermediate layer to absorb lattice mismatching between the Si substrate layer and the GaAs layer, the intermediate layer means comprising at least two differently-constituted superlattices, the constituent super lattice layers being those of sequentially-disposed and differently constituted superlattices which in combination absorb said lattice mismatching.
Claim 2
Dependent Claim
57 words
A superlattice crystal comprising a Si substrate layer, a GaAs layer and intermediate layer to absorb lattice mismatching between the Si substrate layer and the GaAs layer, the intermediate layer means comprising at least two differently-constituted superlattices, the constituent super lattice layers being those of sequentially-disposed and differently constituted superlattices which in combination absorb said lattice mismatching.
Claim 3
Dependent Claim
29 words
A superlattice crystal as set forth in claim 1 wherein said intermediate layer includes a GaP/GaAsP superlattice on said Si substrate and a GaAsP/GaAs superlattice on said GaP/GaAsP superlattice.
Claim 4
Dependent Claim
44 words
A superlattice crystal as set forth in claim 1 wherein said intermediate layer includes an AlP thin film on said Si substrate, an AlGaP thin film on said AlP film, a GaP/GaAsP superlattice on said AlGaP film and GaAsP/GaAs superlattice on said GaP/GaAsP superlattice.
Claim 5
Dependent Claim
31 words
A superlattice crystal as set forth in claim 1 wherein the intermediate layer includes a GaP/GaAsP superlattice and a GaAsP/GaAs superlattice, the latter being in direct contact with the GaAs layer.
Claim 6
Dependent Claim
73 words
A superlattice crystal as set forth in claim 1 wherein the intermediate layer comprises, sequentially: (a) an AlP thin film in direct contact with the Si substrate layer, (b) an AlGaP thin film in direct contact with the AlP thin film, (c) a GaP/GaAsP superlattice in direct contact with the AlGaP thin film, and (d) an arbitrary number of GaAsP/GaAs superlattice layers, one of which is in direct contact with the GaAs layer.
Claim 7
Dependent Claim
59 words
A superlattice crystal as set forth in claim 1, wherein said intermediate layer means consists of a first superlattice having an average lattice constant larger than the lattice constant of said Si substrate and a second superlattice having an average lattice constant larger than that of said first superlattice and smaller than the lattice constant of said GaAs layer.
Claim 8
Dependent Claim
25 words
A superlattice crystal as set forth in claim 6 wherein said first superlattice is a GaP/GaAsP superlattice and said second superlattice is a GaAsP/GaAs superlattice.
Claim 9
Dependent Claim
97 words
A superlattice crystal as set forth in claim 1 wherein said intermediate layer means consist of a first thin film having a lattice constant equal to or larger than that of said Si substrate, a second thin film having a lattice constant equal to or larger than that of said first thin film, a first superlattice having an average lattice constant larger than the lattice constant of said second thin film and a second superlattice having an average lattice constant larger than that of said first superlattice and smaller than the lattice constant of said GaAs layer.
Claim 10
Dependent Claim
29 words
A superlattice crystal as set forth in claim 8 wherein said first thin film is an AlP thin film and said second thin film is an AlGaP thin film.
Claim 11
Dependent Claim
25 words
A superlattice crystal as set forth in claim 8 wherein said first superlattice is a GaP/GaAsP superlattice and said second superlattice is a GaAsP/GaAs superlattice.
Claim 12
Dependent Claim
43 words
A superlattice crystal as set forth in claim 8 wherein said first thin film is an AlP thin film, said second thin film is an AlGaP thin film, said first superlattice is a GaP/GaAsP superlattice and said second superlattice is a GaAsP/GaAs superlattice.
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