Patent US4788665A successfully refreshed from Google Patents.
US4788665A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory
Assignee: Hitachi Ltd
•
Filing: 1987-07-21
•
Granted: 1988-11-29
•
Expires: 2007-07-21
Abstract
Abstract An electrically programmable read only memory is equipped with latch circuits for sequentially introducing series signals which are fed through external terminals. The converter includes sequentially operated switch elements and latch circuits in order to convert the series signals into parallel signals. The thus converted parallel signals are written simultaneously in a memory array via address decoder operated selection switch elements. According to this method, the writing operations into the memory array can be conducted at a high speed even when one writing operation is relatively long as a result of the parallel signal action.
Inventors
- 👤 Minoru Fukuda
- 👤 Hideaki Takahashi
- 👤 June Sugiura
- 👤 Fumio Tsuchiya
- 👤 Toshimasa Kihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:33
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C2216/00; G11C2216/12; G11C2216/14
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
247 words
In a semiconductor memory, the improvement for writing information comprising: a memory array, having plural data lines; including a plurality of semiconductor nonvolatile memory cells which can be erased and electrically written into; external terminal means for receiving serially applied input signals to be written into the memory array; first common data lines; an external means for receiving a writing voltage; a plurality of writing circuits, each having a terminal coupled to said external means and having an input and an output; a first selector means and a second selector means; and a plurality of storage circuit means, each having an input and an output, for temporarily storing respective input signals, wherein said seocnd selector means seqeuntially feeds said input signals, via a plurality of signal paths, to the inputs of said plurality of storage circuit means, wherein said plurality of writing circuits correspond in number to said first common data lines and its outputs are coupled to said first common data lines, wherein said plurality of storage circuit means correspond in number to said writing circuits and its outputs are operatively connected to the inputs of said writing circuits for providing said temporarily stored signals to said writing circuits, and wherein said first selector means, in response to address signals, operatively connects said first common data lines to said plural data lines for writing the stored data into the memory cells, wherein said plural data lines are greater in number than said first common data lines.
Claim 2
Dependent Claim
247 words
In a semiconductor memory, the improvement for writing information comprising: a memory array, having plural data lines; including a plurality of semiconductor nonvolatile memory cells which can be erased and electrically written into; external terminal means for receiving serially applied input signals to be written into the memory array; first common data lines; an external means for receiving a writing voltage; a plurality of writing circuits, each having a terminal coupled to said external means and having an input and an output; a first selector means and a second selector means; and a plurality of storage circuit means, each having an input and an output, for temporarily storing respective input signals, wherein said seocnd selector means seqeuntially feeds said input signals, via a plurality of signal paths, to the inputs of said plurality of storage circuit means, wherein said plurality of writing circuits correspond in number to said first common data lines and its outputs are coupled to said first common data lines, wherein said plurality of storage circuit means correspond in number to said writing circuits and its outputs are operatively connected to the inputs of said writing circuits for providing said temporarily stored signals to said writing circuits, and wherein said first selector means, in response to address signals, operatively connects said first common data lines to said plural data lines for writing the stored data into the memory cells, wherein said plural data lines are greater in number than said first common data lines.
Claim 3
Dependent Claim
46 words
A semiconductor memory according to claim 1, wherein each of said writing circuits includes a switching element which is coupled between said external means and the corresponding first common data line and which is controlled by the temporarily stored sigal of the corresponding storage circuit means.
Claim 4
Dependent Claim
48 words
A semiconducotr memory according to claim 2, wherein said switching element includes a MOSFET which has a first electrode coupled to said external means, a second electrode coupled to the corresponding first data line and a gate electrode coupled to the output of the corresponding storage circuit means.
Claim 5
Dependent Claim
41 words
A semiconductor memory according to claim 3, wherein said second selector means includes a switch circuit, responsive to further address signals, for sequentially coupling each of the respective storage circuit means to receive the input signals at the external terminal means.
Claim 6
Dependent Claim
30 words
A semiconductor memory according to claim 4, wherein said memory array further comprising word lines; and a third selector means, responsive to further address signals, for selecting a word line.
Claim 7
Dependent Claim
53 words
A semiconductor memory according to claim 5, wherein said first selector means comprising a first address decoder, responsive to said address signals, and a switch circuit, said switch circuit operatively connecting said first common data lines to ones of said plural data lines in response to the output of said first address decoder.
Claim 8
Dependent Claim
16 words
A semiconductor memory according to claim 6, wherein said semiconductor nonvolatile memory cells comprise FAMOS transistors.
Claim 9
Dependent Claim
58 words
A semiconductor memory according to claim 7, wherein the output of each one of said plurality of writing circuits is respectiely coupled to a corresponding one of said plurality of first common data lines, and the output of each one of said plurality of storage circuit means is operatively connected to an input of a respective writing circuit.
Claim 10
Dependent Claim
30 words
A semiconductor memory according to claim 3, wherein said memory array further comprising word lines; and a third selector means, responsive to further address signals, for selecting a word line.
Claim 11
Dependent Claim
53 words
A semiconduuctor memory according to claim 9, wherein said first selector means comprising a first address decoder, responsive to said address signals, and a switch circuit, said switch circuit operatively connecting said first common data lines to ones of said plural data lines in response to the output of said first address decoder.
Claim 12
Dependent Claim
57 words
A semiconductor memory according to claim 10, wherein said second selector means comprising a second decoder, responsive to second address signals, and a second switch circuit, said second switch circuit, in response to the output of said second decoder, sequentially feeding the input signals, applied serially to said external terminal means, to the respective storage circuit means.
Claim 13
Dependent Claim
16 words
A semiconductor memory according to claim 11, wherein said semiconductor nonvolatile memory cells comprise FAMOS transistors.
Claim 14
Dependent Claim
58 words
A semiconductor memory according to claim 12, wherein the output of each one of said plurality of writing circuits is respectively coupled to a corresponding one of said plurality of first common data lines, and the output of each one of said plurality of storage circuit means is operatively connected to an input of a respective writing circuit.
Claim 15
Dependent Claim
187 words
In a semiconductor memory, the improvement for writing information comprising: a memory array having data lines, including a plurality of nonvolatile semiconductor memory cells which can be erased and electrically written into; external terminal means for receiving serially applied input signals or an input signal to be written into said memory array; converter means having an input coupled to said external terminal means and having a plurality of outputs, said converter means responding to said serially applied input signals for converting said signals into a plurality of parallel produced output signals; a plurality of terminals, corresponding in number to said outputs of said converter means, and coupled to said outputs of said converter means and to the data lines of said memory array; transmitting means having an input coupled to said external terminal means and having a plurality of outputs coupled to said terminals, said transmitting means responding to said input signal for transmitting said input signal to one of said terminals; and control means coupled to said converter means and to said transmitting means for controlling the operation of said converter means and said transmitting means.
Claim 16
Dependent Claim
187 words
In a semiconductor memory, the improvement for writing information comprising: a memory array having data lines, including a plurality of nonvolatile semiconductor memory cells which can be erased and electrically written into; external terminal means for receiving serially applied input signals or an input signal to be written into said memory array; converter means having an input coupled to said external terminal means and having a plurality of outputs, said converter means responding to said serially applied input signals for converting said signals into a plurality of parallel produced output signals; a plurality of terminals, corresponding in number to said outputs of said converter means, and coupled to said outputs of said converter means and to the data lines of said memory array; transmitting means having an input coupled to said external terminal means and having a plurality of outputs coupled to said terminals, said transmitting means responding to said input signal for transmitting said input signal to one of said terminals; and control means coupled to said converter means and to said transmitting means for controlling the operation of said converter means and said transmitting means.
Claim 17
Dependent Claim
63 words
A semiconductor memory according to claim 14, wherein said converter means includes: a plurality of storage circuit means, corresponding in number to said terminals, each having an input and an output, and for temporarily storing respective input signals; and first selector means sequentially feeding said serially applied input signals, via a plurality of signal paths, to the inputs of said storage circuit means.
Claim 18
Dependent Claim
49 words
A semiconductor memory according to claim 15, wherein said control means includes means for providing selecting signals for indicating one of said terminals to said transmitting means, and wherein said transmitting means includes second selector means for providing said input signal to a terminal indicated by said selecting signals.
Claim 19
Dependent Claim
56 words
A semiconductor memory according to claim 16, further comprising an external terminal for receiving a writing voltage and a plurality of writing means coupled to said external terminal, wherein said plurality of writing means corresponds in number to said terminals and are coupled to said outputs of said plurality of storage means and to said terminals.
Claim 20
Dependent Claim
42 words
A semiconductor memory according to claim 17, wherein each of said writing means includes a switching element which is coupled between said external terminal and the corresponding terminal and which is controlled by the stored signal of the corresponding storage circuit means.
Claim 21
Dependent Claim
50 words
A semiconductor memory according to claim 18, further comprising a selector means controlled by a select signal means and having inputs corresponding in number and coupled to the respective terminals, and having outputs greater than the number of said terminals and represented by said data lines of the memory array.
Claim 22
Dependent Claim
29 words
A semiconductor memory according to claim 19, wherein said memory array further comprising word lines; and third selector means, responsive to second selecting signals, for selecting a word line.
Claim 23
Dependent Claim
19 words
A semiconductor memory according to claim 20, wherein each of said nonvolatile semiconductor memory cells comprises a FAMOS transistor.
Claim 24
Dependent Claim
38 words
A semiconductor memory according to claim 14, further comprising an external control terminal for receiving a control signal, wherein said control means for controlling said converter means and said transmitting means operates in response to said control signal.
References Cited (Backward Citations)
US4130900A
Cited
US4691298A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-29 | 1992-05-30 | 1992-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-29 | 1996-05-30 | 1996-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-29 | 2000-05-30 | 2000-11-29 | $7700.00 | Window Closed / Lapsed |