Patent US4788581A successfully refreshed from Google Patents.
US4788581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOS dosimeter
Assignee: MOS DOSIMETER HAHN-MEITNER-INSTITUT fur KERNFORSCHUNG BERLIN GmbH
•
Filing: 1985-03-29
•
Granted: 1988-11-29
•
Expires: 2005-03-29
Abstract
Abstract In known MOS dosimeters for measuring an energy dosage within radiation fields, which comprise a semiconductor substrate with an insulator layer and a metal contact or poly-si-contact, a measurement is taken and irreversible damage is done to the insulator layer. Prior art dosimeters of this kind cannot be electrically reset, nor can such MOS structures be directly integrated with evaluating electronics. The present invention avoids these drawbacks by providing a hard-radiation resistant insulator layer with a floating gate X. Such a resistant insulator layer is produced in a "hardened" process by thermal dry oxidation of silicon at low temperatures of about 850° to 950° C. The inventive dosimeter makes it possible to integrate, on the floating gate, both negative and positive charges. This permits an integration of MOS sensors and signal processing electronic elements on a single chip. By providing a concentrator, the sensitivity of the inventive MOS dosimeter can be augmented by several orders of magnitude, as compared to conventional devices.
Inventors
- 👤 Meinhard Knoll
- 👤 Dietrich Braunig
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:23
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/282; H10F30/29; H10F30/298
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
200 words
An electrically resettable MOS dosimeter for non-destructively measuring energy doses of a radiation field in dependance upon corresponding measurable changes in electric charges relative to an initial value and which dosimeter is electrically resettable to such initial value for taking a new such measurement, which comprises a semiconductor substrate having source and drain electrodes, an insulator layer applied to said semiconductor substrate with said source and drain electrodes adjacent thereto, said insulator layer being composed of radiation resistant material which is capable of capturing radiation and which has been radiation hardened sufficiently to render said insulator layer hardened to radiation and resistant to damage by such radiation yet which is capable of capturing such radiation, an electrode gate contact connected to said insulator layer, a floating gate embedded in said insulator layer, and means for applying a voltage to said electrode gate contact such that when said insulator layer is exposed to a radiation field, and a voltage is applied to said electrode gate contact, charges are generated by said insulator layer and are collected by said floating gate in dependence upon the radiation dosage, which charges are electrically resettable to such initial value for taking a new such measurement.
Claim 2
Dependent Claim
200 words
An electrically resettable MOS dosimeter for non-destructively measuring energy doses of a radiation field in dependance upon corresponding measurable changes in electric charges relative to an initial value and which dosimeter is electrically resettable to such initial value for taking a new such measurement, which comprises a semiconductor substrate having source and drain electrodes, an insulator layer applied to said semiconductor substrate with said source and drain electrodes adjacent thereto, said insulator layer being composed of radiation resistant material which is capable of capturing radiation and which has been radiation hardened sufficiently to render said insulator layer hardened to radiation and resistant to damage by such radiation yet which is capable of capturing such radiation, an electrode gate contact connected to said insulator layer, a floating gate embedded in said insulator layer, and means for applying a voltage to said electrode gate contact such that when said insulator layer is exposed to a radiation field, and a voltage is applied to said electrode gate contact, charges are generated by said insulator layer and are collected by said floating gate in dependence upon the radiation dosage, which charges are electrically resettable to such initial value for taking a new such measurement.
Claim 3
Dependent Claim
18 words
Dosimeter of claim 1 wherein said substrate is silicon and said insulation layer is a silicon dioxide film.
Claim 4
Dependent Claim
33 words
Dosimeter of claim 1 wherein said insulator layer is a silicon dioxide layer which is produced by oxidizing silicon in a thermal, dry hardening process at low temperatures of 850° to 950° C.
Claim 5
Dependent Claim
32 words
Dosimeter of claim 1 wherein said floating gate is embedded as an interfacial layer between two different insulating materials forming said insulator layer, said two different insulating materials having different ionizing coefficients.
Claim 6
Dependent Claim
100 words
Dosimeter of claim 1 including a first chip and a second chip, said first chip being formed of a first said semiconductor substrate having said source and drain electrodes, a first said insulator layer applied to said first semiconductor substrate with said source and drain electrodes adjacent thereto and a first said floating gate, and said second said chip being formed of a second semiconductor substrate, a second said insulator layer and a second said floating gate, said second semiconductor substrate forming said electrode gate contact, and means for conductively connecting said floating gates of said chips to each other.
Claim 7
Dependent Claim
70 words
Dosimeter of claim 5 including a base semiconductor substrate, said first and second semiconductor substrates being formed as substrate material islands in said base substrate, said first and second layers being applied respectively to said islands and said conductively connected floating gates being applied respectively to said layers, with one of said islands forming said electrode gate contact, said layers being made of different insulating materials having different ionizing coefficients.
Claim 8
Dependent Claim
34 words
Dosimeter of claim 1 including at least one resistance layer formed on said insulator layer and shaped with a larger area than said insulator layer to produce a potential drop on said floating gate.
Claim 9
Dependent Claim
152 words
MOS dosimeter for non-destructively measuring energy doses of a radiation field, comprising a semiconductor substrate having source and drain electrodes, an insulator layer applied to said semiconductor substrate with said source and drain electrodes adjacent thereto, said insulator layer being composed of radiation resistant silicon dioxide, said insulator layer constituting a radiation hardened layer which has been produced by oxidizing silicon in a thermal, dry hardening process at low temperatures of 850° to 950° C. sufficiently to render said insulator layer hardened to radiation and resistant to damage by such radiation, a metal contact connected to said insulator layer, a floating gate embedded in said insulator layer, and means for applying a voltage to said metal contact such that when said insulator layer is exposed to a radiation field and a voltage is applied to said metal contact, charges are generated by said insulator layer and are collected by said floating gate.
Claim 10
Dependent Claim
152 words
MOS dosimeter for non-destructively measuring energy doses of a radiation field, comprising a semiconductor substrate having source and drain electrodes, an insulator layer applied to said semiconductor substrate with said source and drain electrodes adjacent thereto, said insulator layer being composed of radiation resistant silicon dioxide, said insulator layer constituting a radiation hardened layer which has been produced by oxidizing silicon in a thermal, dry hardening process at low temperatures of 850° to 950° C. sufficiently to render said insulator layer hardened to radiation and resistant to damage by such radiation, a metal contact connected to said insulator layer, a floating gate embedded in said insulator layer, and means for applying a voltage to said metal contact such that when said insulator layer is exposed to a radiation field and a voltage is applied to said metal contact, charges are generated by said insulator layer and are collected by said floating gate.
Claim 11
Dependent Claim
23 words
Dosimeter of claim 8 wherein said floating gate is embedded as an interfacial layer between two different insulating materials forming said insulator layer.
Claim 12
Dependent Claim
99 words
Dosimeter of claim 8 including a first chip and a second chip, said first chip being formed of a first said semiconductor substrate having source and drain electrodes, a first said insulator layer applied to said first said semiconductor substrate with said source and drain electrodes adjacent thereto and a first said floating gate, and said second chip being formed of a second semiconductor substrate, a second said insulator layer and a second said floating gate, said second semiconductor substrate forming said electrode gate contact, and means for conductively connecting said floating gates of said chips to each other.
Claim 13
Dependent Claim
66 words
Dosimeter of claim 10 including a base semiconductor substrate, said first and second substrates being formed a substrate material islands in said base substrate, said first and second insulator layers being applied respectively to said islands and said conductively connected floating gates being applied respectively to said insulator layers, with one of said islands forming said contact, said insulator layers being made of different insulating materials.
Claim 14
Dependent Claim
34 words
Dosimeter of claim 8 including at least one resistance layer formed on said insulator layer and shaped with a larger area than said insulator layer to produce a potential drop on said floating gate.
Claim 15
Dependent Claim
26 words
Dosimeter of claim 12 wherein said resistance layer has a trapezoidal configuration, the short side of said trapezoidal configuration facing the region of said floating gate.
Claim 16
Dependent Claim
13 words
Dosimeter of claim 13 wherein said resistance layer has a strip array configuration.
Claim 17
Dependent Claim
25 words
Dosimeter of claim 12 includes a second resistance layer on said insulator layer, said resistance layer being trapezoidal and having short sides facing each other.
Claim 18
Dependent Claim
10 words
Dosimeter of claim 8 wherein said semiconductor substrate is silicon.
Claim 19
Dependent Claim
113 words
Method of using the dosimeter of claim 1 which comprises providing said insulator layer with an initial value of electric charges, exposing said insulator layer having said initial value of electric charges to an energy dose of a radiation field while applying a voltage to said electrode gate contact for generating charges by said insulator layer and collecting said charges by said floating gate in dependence upon the radiation dosage whereby to permit measurement of the charge in electrical charges relative to said initial value as a function of the radiation energy dose exposure, and electrically resetting the electric charges to said initial value for taking a new such measurement with said dosimeter.
Claim 20
Dependent Claim
112 words
Method of using the dosimeter of claim 8 which comprises providing said insulator layer with an initial value of electric charges, exposing said insulator layer having said initial value of electric charges to an energy dose of a radiation field while applying a voltage to said metal contact for generating charges by said insulator layer and collecting said charges by said floating gate in dependence upon the radiation dosage whereby to permit measurement of the change in electrical charges relative to said initial value as a function of the radiation energy dose exposure, and electrically resetting the electric charges to said initial value for taking a new such measurement with said dosimeter.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-29 | 1992-05-30 | 1992-11-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-29 | 1996-05-30 | 1996-11-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-29 | 2000-05-30 | 2000-11-29 | $7700.00 | Window Closed / Lapsed |