US3569704A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation dosimeter
Assignee: United States Atomic Energy Commission
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Filing: 1968-08-15
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Granted: 1971-03-09
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Expires: 1988-08-15
Abstract
Abstract A dosimeter for measuring high energy ionizing radiation utilizes a metal-oxide-semiconductor (MOS) structure as the sensing element. Advantageously, the MOS structure comprises a silicon wafer a portion of one surface of which is oxidized and then provided with an aluminum electrode. In one embodiment, provision for heating the MOS structure and for measuring its temperature is incorporated in the MOS structure. After exposure to ionizing radiation the MOS structure is heated with an ammeter connected between the silicon wafer and aluminum electrode. The integrated current flow is then a measure of the radiation dose received by the structure.
Inventors
- 👤 John P Mitchell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:54
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/298; G; G01; G01T; G01T1/00; G01T1/02; G01T1/026
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
22 words
A dosimeter in accordance with claim 1 in which the semiconductive crystal is of silicon and the insulating layer is of silicon-oxide.
Claim 2
Dependent Claim
33 words
A dosimeter in accordance with claim 1 in which the heating means comprises a separate region of the crystal and means for the passage of current through such region for heating the crystal.
Claim 3
Dependent Claim
37 words
A dosimeter in accordance with claim 3 in which the crystal also includes a PN junction and which includes means for measuring the impedance of said junction to provide an indication of the temperature of the crystal.
Claim 4
Independent Claim
68 words
The method of measuring radiation comprising the steps of: exposing to the radiation to be measured a semiconductive device comprising a semiconductive crystal with an insulating layer on one surface and a metal electrode over said layer; thereafter heating the exposed semiconductive device to a temperature in excess of 200* C.; and while heating the device measuring the current flow between the metal electrode and the semiconductive crystal.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-03-08 | 1974-09-07 | 1975-03-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-03-08 | 1978-09-07 | 1979-03-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-03-08 | 1982-09-07 | 1983-03-09 | $7700.00 | Window Closed / Lapsed |