Patent US4767625A successfully refreshed from Google Patents.
Patent US4786962A successfully refreshed from Google Patents.
US4786962A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating multilevel metal integrated circuits and structures produced thereby
Assignee: Avago Technologies International Sales Pte Ltd
•
Filing: 1986-06-06
•
Granted: 1988-11-22
•
Expires: 2006-06-06
Abstract
Abstract The specification describes a multilevel metal CMOS integrated circuit wherein a first or lower level of metallization comprises strips of tungsten over aluminum. These strips are connected through vias in an inter-metal dielectric layer to an upper or second level of metallization which is photodefined in a desired pattern. The tungsten suppresses hillocks in the underlying aluminum during high temperature processing and also advantageously serves as an etch stop material during integrated circuit fabrication.
Inventors
- 👤 Tim R. Koch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/062; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
145 words
A process for fabricating multilevel metal integrated circuits including the steps of: a. providing a semiconductor substrate with a surface insulator thereon, b. providing a first level of metallization comprising one or more strips of aluminum covered by corresponding surface strips of tungsten, c. providing an inter-metal insulating layer surrounding said first level of metallization and having openings therein exposing preselected areas of said tungsten, and d. providing a second level of metallization atop said inter-metal insulating layer and comprising one or more strips of conductors positioned in vias or openings in said inter-metal insulating layer and making electrical contact with said tungsten, whereby said tungsten serves to prevent hillocks from occuring in the aluminum of said first level of metallization and further serves as an etch stop material during the etching of both said inter-metal insulating layer and the second level of metallization thereon.
Claim 2
Dependent Claim
145 words
A process for fabricating multilevel metal integrated circuits including the steps of: a. providing a semiconductor substrate with a surface insulator thereon, b. providing a first level of metallization comprising one or more strips of aluminum covered by corresponding surface strips of tungsten, c. providing an inter-metal insulating layer surrounding said first level of metallization and having openings therein exposing preselected areas of said tungsten, and d. providing a second level of metallization atop said inter-metal insulating layer and comprising one or more strips of conductors positioned in vias or openings in said inter-metal insulating layer and making electrical contact with said tungsten, whereby said tungsten serves to prevent hillocks from occuring in the aluminum of said first level of metallization and further serves as an etch stop material during the etching of both said inter-metal insulating layer and the second level of metallization thereon.
Claim 3
Dependent Claim
124 words
A multilevel metal integrated circuit including: a. a semiconductor substrate having a surface insulator layer thereon, b, one or more strips of aluminum formed on said surface insulator and covered with corresponding strips of tungsten, c. an inter-metal insulating layer surrounding said strips of aluminum and tungsten and having openings therein exposing predetermined surface areas of said tungsten, and d. a second level of metallization disposed atop said inter-metal insulating layer and comprising one or more strips of surface conductor located in vias or openings in said inter-metal insulating layer and in electrical contact with said tungsten, whereby hillocks in said aluminum strips are suppressed by said tungsten without sacrificing integrated circuit density or causing pitting of metals within said multilevel metal integrated circuit.
Claim 4
Dependent Claim
124 words
A multilevel metal integrated circuit including: a. a semiconductor substrate having a surface insulator layer thereon, b, one or more strips of aluminum formed on said surface insulator and covered with corresponding strips of tungsten, c. an inter-metal insulating layer surrounding said strips of aluminum and tungsten and having openings therein exposing predetermined surface areas of said tungsten, and d. a second level of metallization disposed atop said inter-metal insulating layer and comprising one or more strips of surface conductor located in vias or openings in said inter-metal insulating layer and in electrical contact with said tungsten, whereby hillocks in said aluminum strips are suppressed by said tungsten without sacrificing integrated circuit density or causing pitting of metals within said multilevel metal integrated circuit.
Claim 5
Dependent Claim
142 words
A process for fabricating multi-level metal integrated circuits including the steps of: a. providing a selected substrate with a surface insulator thereon or as an integral part thereof, b. providing a first level of metallization on said substrate and comprising one or more strips of aluminum covered by corresponding strips of a chosen refractory metal sufficient in strength to suppress the formation of hillocks or spikes in said strips of aluminum when heated to or beyond a predetermined elevated temperature, c. providing an intermetal insulating layer surrounding said first level of metallization and having openings therein exposing preselected areas of said refractory metal, and d. providing a second level of metallization atop said intermetal insulating layer and comprising one or more strips of conductors positioned in said openings in said intermetal insulating layer and making electrical contact with said selected refractory metal.
Claim 6
Dependent Claim
142 words
A process for fabricating multi-level metal integrated circuits including the steps of: a. providing a selected substrate with a surface insulator thereon or as an integral part thereof, b. providing a first level of metallization on said substrate and comprising one or more strips of aluminum covered by corresponding strips of a chosen refractory metal sufficient in strength to suppress the formation of hillocks or spikes in said strips of aluminum when heated to or beyond a predetermined elevated temperature, c. providing an intermetal insulating layer surrounding said first level of metallization and having openings therein exposing preselected areas of said refractory metal, and d. providing a second level of metallization atop said intermetal insulating layer and comprising one or more strips of conductors positioned in said openings in said intermetal insulating layer and making electrical contact with said selected refractory metal.
References Cited (Backward Citations)
US4651191A
Cited
US4592132A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-22 | 1992-05-23 | 1992-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-22 | 1996-05-23 | 1996-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-22 | 2000-05-23 | 2000-11-22 | $7700.00 | Window Closed / Lapsed |